Abstract: A circuit includes a power management circuit configured to receive a first or second control signal, and to supply a first, second or third supply voltage. The power management circuit includes a first level shifter circuit, a first header circuit and a latch circuit. The first level shifter circuit is configured to generate a fourth control signal in response to a fifth control signal. The fourth control signal is a level shifted version of the fifth control signal. The first header circuit is configured to supply a first supply voltage of a first voltage supply to a first node in response to the first control signal, or a second supply voltage of a second voltage supply to a second node in response to a first level shifted signal. The latch circuit is configured to generate a first output control signal in response to the first and the fourth control signal.

Abstract: A semiconductor package includes a semiconductor device, an encapsulating material, a redistribution structure, and an adhesive residue. The encapsulating material encapsulates a first part of a side surface of the semiconductor device. The redistribution structure is disposed over the semiconductor device and a first side of the encapsulating material. The adhesive residue is disposed over a second side of the encapsulating material opposite to the first side and surrounding the semiconductor device, wherein the adhesive residue encapsulates a second part of the side surface of the semiconductor device.

Abstract: A method of forming an integrated circuit structure on a wafer includes providing a first etcher comprising a first electrostatic chuck (ESC); placing the wafer on the first ESC; and forming a via opening in the wafer using the first etcher. After the step of forming the via opening, a first reverse de-chuck voltage is applied to the first ESC to release the wafer. The method further includes placing the wafer on a second ESC of a second etcher; and performing an etching step to form an additional opening in the wafer using the second etcher. After the step of forming the additional opening, a second reverse de-chuck voltage is applied to the second ESC to release the wafer. The second reverse de-chuck voltage is different from the first reverse de-chuck voltage.

Abstract: An apparatus and method for spiral polishing with electromagnetic abrasive has adopted the principle of electromagnetic and magnetic abrasive along with a lead screw to polish the inner or outer surface of a precise screw or a complicated part. The apparatus includes a clamp, a lead screw, a first electromagnet, and a second electromagnet assembled in an airtight space, wherein the airtight space is filled with magnetic abrasive which is driven by the rotation of the lead screw and the electromagnetic function to polish a processed part in a regular shape or in an irregular shape.

Abstract: A method of forming an integrated circuit structure on a wafer includes providing a first etcher comprising a first electrostatic chuck (ESC); placing the wafer on the first ESC; and forming a via opening in the wafer using the first etcher. After the step of forming the via opening, a first reverse de-chuck voltage is applied to the first ESC to release the wafer. The method further includes placing the wafer on a second ESC of a second etcher; and performing an etching step to form an additional opening in the wafer using the second etcher. After the step of forming the additional opening, a second reverse de-chuck voltage is applied to the second ESC to release the wafer. The second reverse de-chuck voltage is different from the first reverse de-chuck voltage.

Abstract: An apparatus and method for spiral polishing with electromagnetic abrasive has adopted the principle of electromagnetic and magnetic abrasive along with a lead screw to polish the inner or outer surface of a precise screw or a complicated part. The apparatus includes a clamp, a lead screw, a first electromagnet, and a second electromagnet assembled in an airtight space, wherein the airtight space is filled with magnetic abrasive which is driven by the rotation of the lead screw and the electromagnetic function to polish a processed part in a regular shape or in an irregular shape.

Abstract: An apparatus and method for spiral polishing with electromagnetic abrasive has adopted the principle of electromagnetic and magnetic abrasive along with a lead screw to polish the inner or outer surface of a precise screw or a complicated part. The apparatus includes a clamp, a lead screw, a first electromagnet, and a second electromagnet assembled in an airtight space, wherein the airtight space is filled with magnetic abrasive which is driven by the rotation of the lead screw and the electromagnetic function to polish a processed part in a regular shape or in an irregular shape.

Abstract: An apparatus and method for spiral polishing with electromagnetic abrasive has adopted the principle of electromagnetic and magnetic abrasive along with a lead screw to polish the inner or outer surface of a precise screw or a complicated part. The apparatus includes a clamp, a lead screw, a first electromagnet, and a second electromagnet assembled in an airtight space, wherein the airtight space is filled with magnetic abrasive which is driven by the rotation of the lead screw and the electromagnetic function to polish a processed part in a regular shape or in an irregular shape.