Abstract: A method of forming an integrated circuit structure on a wafer includes providing a first etcher comprising a first electrostatic chuck (ESC); placing the wafer on the first ESC; and forming a via opening in the wafer using the first etcher. After the step of forming the via opening, a first reverse de-chuck voltage is applied to the first ESC to release the wafer. The method further includes placing the wafer on a second ESC of a second etcher; and performing an etching step to form an additional opening in the wafer using the second etcher. After the step of forming the additional opening, a second reverse de-chuck voltage is applied to the second ESC to release the wafer. The second reverse de-chuck voltage is different from the first reverse de-chuck voltage.

Abstract: An apparatus and method for spiral polishing with electromagnetic abrasive has adopted the principle of electromagnetic and magnetic abrasive along with a lead screw to polish the inner or outer surface of a precise screw or a complicated part. The apparatus includes a clamp, a lead screw, a first electromagnet, and a second electromagnet assembled in an airtight space, wherein the airtight space is filled with magnetic abrasive which is driven by the rotation of the lead screw and the electromagnetic function to polish a processed part in a regular shape or in an irregular shape.

Abstract: A method of forming an integrated circuit structure on a wafer includes providing a first etcher comprising a first electrostatic chuck (ESC); placing the wafer on the first ESC; and forming a via opening in the wafer using the first etcher. After the step of forming the via opening, a first reverse de-chuck voltage is applied to the first ESC to release the wafer. The method further includes placing the wafer on a second ESC of a second etcher; and performing an etching step to form an additional opening in the wafer using the second etcher. After the step of forming the additional opening, a second reverse de-chuck voltage is applied to the second ESC to release the wafer. The second reverse de-chuck voltage is different from the first reverse de-chuck voltage.

Abstract: An apparatus and method for spiral polishing with electromagnetic abrasive has adopted the principle of electromagnetic and magnetic abrasive along with a lead screw to polish the inner or outer surface of a precise screw or a complicated part. The apparatus includes a clamp, a lead screw, a first electromagnet, and a second electromagnet assembled in an airtight space, wherein the airtight space is filled with magnetic abrasive which is driven by the rotation of the lead screw and the electromagnetic function to polish a processed part in a regular shape or in an irregular shape.

Abstract: An apparatus and method for spiral polishing with electromagnetic abrasive has adopted the principle of electromagnetic and magnetic abrasive along with a lead screw to polish the inner or outer surface of a precise screw or a complicated part. The apparatus includes a clamp, a lead screw, a first electromagnet, and a second electromagnet assembled in an airtight space, wherein the airtight space is filled with magnetic abrasive which is driven by the rotation of the lead screw and the electromagnetic function to polish a processed part in a regular shape or in an irregular shape.

Abstract: An apparatus and method for spiral polishing with electromagnetic abrasive has adopted the principle of electromagnetic and magnetic abrasive along with a lead screw to polish the inner or outer surface of a precise screw or a complicated part. The apparatus includes a clamp, a lead screw, a first electromagnet, and a second electromagnet assembled in an airtight space, wherein the airtight space is filled with magnetic abrasive which is driven by the rotation of the lead screw and the electromagnetic function to polish a processed part in a regular shape or in an irregular shape.