Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin in an n-type Fin Field-Effect (FinFET) region and a p-type FinFET region, respectively, forming a first dielectric fin and a second dielectric fin in the n-type FinFET region and the p-type FinFET region, respectively, forming a first epitaxy mask to cover the second semiconductor fin and the second dielectric fin, performing a first epitaxy process to form an n-type epitaxy region based on the first semiconductor fin, removing the first epitaxy mask, forming a second epitaxy mask to cover the n-type epitaxy region and the first dielectric fin, performing a second epitaxy process to form a p-type epitaxy region based on the second semiconductor fin, and removing the second epitaxy mask. After the second epitaxy mask is removed, a portion of the second epitaxy mask is left on the first dielectric fin.

Abstract: In an internal combustion engine a fuel-air mixture having compression temperatures and pressures sufficiently low as not to support auto ignition, ignition is achieved by injecting igniting active radicals into the air-fuel mixture. In one embodiment the active radicals are provided by withdrawing a portion of the mixture, treating it to produce active radicals in the portion and returning the portion to the mixture. Treatment of the portion typically includes simultaneously injecting, mixing, and compression of a predetermined amount of pilot fuel within the portion.