Abstract: A polymer, including a first repeating unit comprising a sulfone group, wherein the sulfone group is directly bonded to a group of formula —C(Ra)(Rb)—; and a second repeating unit comprising an acid labile group, a base-decomposable group, a polar group, or a combination thereof, wherein Ra and Rb are each independently hydrogen, halogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C3-30 heterocycloalkyl, substituted or unsubstituted C2-30 alkenyl, substituted or unsubstituted C3-30 cycloalkenyl, substituted or unsubstituted C3-30 heterocycloalkenyl, substituted or unsubstituted C6-30 aryl, substituted or unsubstituted C7-30 arylalkyl, substituted or unsubstituted C7-30 alkylaryl, substituted or unsubstituted C2-30 heteroaryl, substituted or unsubstituted C3-30 heteroarylalkyl, or substituted or unsubstituted C3-30 alkylheteroaryl, provided that at least one of Ra and Rb is hydrogen.

Abstract: A block copolymer, comprising a center block comprising an acid-labile group in a backbone of the block copolymer; and at least two copolymer arms covalently attached to the center block, wherein each copolymer arm comprises a first repeating unit, and a second repeating unit that is different from the first repeating unit.

Abstract: A composition including an acid-sensitive polymer comprising a first repeating unit derived from a monomer comprising an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound that has a greater electron affinity than an electron affinity of the photoacid generator compound, wherein the non-polymeric electron acceptor compound does not generate a photoacid, and wherein the non-polymeric electron acceptor compound does not comprise a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, wherein the solvent is present in the composition in an amount greater than 50 weight percent, based on total weight of the composition, wherein the composition is a positive-acting EUV photoresist or an electron beam resist.

Abstract: A polymer having a repeating unit derived from a first monomer of formula (I) wherein R1, R3, R4, R5, R6 are independently H, a linear or branched or alicyclic substituted or unsubstituted alkyl group having from 1 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having from 5 to 20 carbon atoms; R2 is chosen from null, a linear or branched or alicyclic substituted or unsubstituted alkyl group having from 1 up to 20, up to 15 carbon atoms or a substituted or unsubstituted aromatic group having from 5 to 20 carbon atoms; and n is an integer of 0 to 3, or R1 and R2 or R1 and R6 together with the carbon atoms in the ring structure to which they are attached form cyclic structures. The polymer can be used in a photoresist composition.

Abstract: A polymer, comprising a first repeating unit derived from a first monomer comprising a single ester acetal group, and a second repeating unit derived from a second monomer comprising a plurality of ester acetal groups.

Abstract: A block copolymer including a first block comprising two or more structurally different repeating units; a second block comprising two or more structurally different repeating units; a repeating unit of the first block comprises an acid-labile group, a lactone group, a salt group, or a hydroxyaryl group; and a repeating unit of the second block comprises an acid-labile group, a lactone group, a salt group, or a hydroxyaryl group, wherein the two or more structurally different repeating units of the first block are the same as the two or more structurally different repeating units of the second block.

Abstract: Photoresist topcoat compositions, comprising: a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition; a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V): wherein: R5 independently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R6 represents linear, branched or cyclic C1 to C20 fluoroalkyl; R7 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L3 represents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition and a solvent. The invention finds particular applicability in the manufacture of semiconductor devices.

Abstract: A photoresist composition comprising a polymer, a photoacid generator, an additive comprising a tertiary carbon atom as a ring-forming atom of a lactone ring, and a solvent.

Abstract: A polymer including a first repeating unit comprising an acid labile group; an anionic endgroup selected from a carboxylate group or a sulfamate group; and an organic cation.

Abstract: A polymer, including a first repeating unit comprising a sulfone group, wherein the sulfone group is directly bonded to a group of formula —C(Ra)(Rb)—; and a second repeating unit comprising an acid labile group, a base-decomposable group, a polar group, or a combination thereof, wherein Ra and Rb are each independently hydrogen, halogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C3-30 heterocycloalkyl, substituted or unsubstituted C2-30 alkenyl, substituted or unsubstituted C3-30 cycloalkenyl, substituted or unsubstituted C3-30 heterocycloalkenyl, substituted or unsubstituted C6-30 aryl, substituted or unsubstituted C7-30 arylalkyl, substituted or unsubstituted C7-30 alkylaryl, substituted or unsubstituted C2-30 heteroaryl, substituted or unsubstituted C3-30 heteroarylalkyl, or substituted or unsubstituted C3-30 alkylheteroaryl, provided that at least one of Ra and Rb is hydrogen.

Abstract: Disclosed herein is a pattern formation method, comprising (a) applying a layer of a photoresist composition over a semiconductor substrate, (b) pattern-wise exposing the photoresist composition layer to i-line radiation; and (c) developing the exposed photoresist composition layer to provide a resist relief image; wherein the photoresist composition comprises a non-ionic photoacid generator; a solvent; a first polymer and a second polymer; and wherein the first polymer comprises a polymeric dye.

Abstract: Disclosed herein is a copolymer comprising first polymerized units of the formula (1): wherein: R1 is H or a substituted or unsubstituted C1-C6 alkyl group; and R2 is a substituted or unsubstituted C3-C20 alkyl group that optionally includes one or more of —O—, —S—, —N—, —C(O)—, or —C(O)O—, —N—C(O)—, —C(O)—NR—; wherein R is H or a substituted or unsubstituted C1-C6 alkyl group; and second polymerized units of the formula (2): wherein: R3 is a substituted or unsubstituted C1-C6 alkyl group that optionally includes one or more of —O—, —N—, —S—, —C(O)—, or —C(O)O—; wherein the first polymerized units and the second polymerized units are chemically different, and the copolymer is free of fluorine.

Abstract: A photoactive compound including an organic cation; and an anion represented by Formula (1): wherein X is an organic group; Y1 and Y2 are each independently a non-hydrogen substituent; Y1 and Y2 together optionally form a ring; Z2 is hydrogen, halogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C3-30 heterocycloalkyl, substituted or unsubstituted C6-50 aryl, substituted or unsubstituted C7-50 arylalkyl, substituted or unsubstituted C7-50 alkylaryl, substituted or unsubstituted C6-50 aryloxy, substituted or unsubstituted C3-30 heteroaryl, substituted or unsubstituted C4-30 alkylheteroaryl, substituted or unsubstituted C4-30 heteroarylalkyl, or substituted or unsubstituted C3-30 heteroaryloxy; Z2 optionally further comprises one or more divalent linking groups as part of its structure; Z2 and one of Y1 or Y2 together optionally form a ring; X and Z2 together optionally form a ring; and X and one of Y1 or Y2 together optionally form a

Abstract: A photoacid generator, including an organic cation; and an anion including an anionic core, wherein the anionic core includes a cyclopentadienide group, wherein the cyclopentadienide group is substituted with an organic group including a semi-metal element, and wherein the anion is substituted with one or more electron withdrawing groups.

Abstract: Disclosed herein is a copolymer comprising first polymerized units of the formula (1); wherein: R1 is H or a substituted or unsubstituted C1-C6 alkyl group; and R2 is a substituted or unsubstituted C3-C20 alkyl group that optionally includes one or more of —O—, —S—, —N—, —C(O)—, or —C(O)O—, —N—C(O)—, —C(O)—NR—; wherein R is H or a substituted or unsubstituted C1-C6 alkyl group; and second polymerized units of the formula (2): wherein: R3 is a substituted or unsubstituted C1-C6 alkyl group that optionally includes one or more of —O—, —N—, —S—, —C(O)—, or —C(O)O—; wherein the first polymerized units and the second polymerized units are chemically different, and the copolymer is free of fluorine.

Abstract: Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a solvent system that comprises 1) a first organic solvent represented by formula (I), wherein R1 and R2 are alkyl groups of 3-8 carbons and the total number of carbons of R1 and R2 is greater than 6; and 2) a second organic solvent that is a C4 to C10 monovalent alcohol.

Abstract: New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

Abstract: A photoresist composition comprises a first polymer formed by free radical polymerization. The first polymer comprises polymerized units formed from a monomer that comprises an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1): and a solvent.

Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Ar1 represents an aromatic group; R1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent R1 groups together optionally form a fused ring structure with Ar1; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1, and two or more of R1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.

Abstract: A polymer, comprising a first repeating unit derived from a first monomer comprising a single ester acetal group, and a second repeating unit derived from a second monomer comprising a plurality of ester acetal groups.