Abstract: A vacuum leakage detection device for detecting vacuum leakage from a semiconductor manufacturing device includes a first pipe to introduce a target chemical species from the semiconductor manufacturing device, an additional gas supplier configured to supply an additional chemical species through a second pipe to the first pipe to react with the target chemical species, a flow meter configured to control a flow rate of the additional chemical species, a plasma generator connected to the first pipe and configured to convert a monitoring chemical species into a plasma state, the monitoring chemical species being generated by reaction of the target chemical species and the additional chemical species, a sensor configured to obtain emission spectrum data for the monitoring chemical species from the plasma generator, and a processor configured to calculate a leakage amount of the target chemical species, based on emission intensity of the monitoring chemical species.

Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor comprises an active layer, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, the channel portion includes a first channel area and a second channel area, each of the first channel area and the second channel area is extended from the first connection portion to the second connection portion, and a length of the first channel area is shorter than that of the second channel area.

Abstract: A thin film transistor and a display device comprising the same is disclosed. The thin film transistor comprises an active layer on a substrate, and a first gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, and an effective gate voltage applied to a first area of the channel portion, which is in contact with the first connection portion, is greater than that applied to a second area of the channel portion, which is in contact with the second connection portion.

Abstract: A thin film transistor, a manufacturing method of the thin film transistor and display apparatus including the thin film transistor are provided. The thin film transistor comprises an active layer and a gate electrode that partially overlaps the active layer, wherein the active layer includes a channel portion, a first connection portion contacting one side, namely a first side, of the channel portion and a second connection portion spaced apart from the first connection portion and contacting the other side, namely a second side of the channel portion, wherein the channel portion includes a first channel part overlapping the gate electrode and a second channel part not overlapping the gate electrode.

Abstract: An apparatus for classifying heart disease using a MobileNet according to an embodiment of the present invention may comprise: an input unit for receiving a time-domain electrocardiogram signal; a wavelet transform unit for transforming the timedomain electrocardiogram signal into a frequency-domain electrocardiogram signal by using a wavelet transform; and a neural network for classifying the frequency-domain electrocardiogram signal as one of atrial fibrillation (AFIB), left bundle branch block beat (LBBB), normal sinus rhythm (NSR), or premature ventricular contraction (PVC), wherein the neural network may be a MobileNet trained using a training data set.

Abstract: The thin film transistor, fabrication method thereof, and display apparatus comprising the same are provided. The thin film transistor comprises a base substrate, an oxide semiconductor layer on the base substrate, a channel protection layer in contact with the oxide semiconductor layer, and a gate electrode spaced apart from the oxide semiconductor layer and at least partially overlapped with the oxide semiconductor layer, and the channel protection layer includes carbon.

Abstract: An organic light emitting display device is disclosed that uses a hybrid type thin film transistor. The organic light emitting display device includes a conductive pattern with a higher etch resistance compared to an inorganic thin film in an upper edge of a semiconductor pattern, and is thereby capable of simplifying a manufacturing process of a substrate on which an array of hybrid type thin film transistors each including multiple layers is disposed, and improving the performance of thin film transistors formed on the array substrate. The organic light emitting display device can represent a variety of grayscale images at low grayscales as a driving thin film transistor including an oxide semiconductor pattern is designed to have an increased s-factor value.

Abstract: Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.

Abstract: A thin film transistor and a display device comprising the same is disclosed. The thin film transistor comprises an active layer on a substrate, and a first gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, and an effective gate voltage applied to a first area of the channel portion, which is in contact with the first connection portion, is greater than that applied to a second area of the channel portion, which is in contact with the second connection portion.

Abstract: A thin film transistor substrate and a display device including the same are provided. The thin film transistor substrate includes a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, a first conductive material layer on the first active layer, and a first gate electrode spaced apart from the first active layer and at least partially overlapped with the first active layer, and the second thin film transistor includes a second active layer on the base substrate, a second conductive material layer on the second active layer, and a second gate electrode spaced apart from the second active layer and at least partially overlapped with the second active layer.

Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor comprises an active layer, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, the channel portion includes a first channel area and a second channel area, each of the first channel area and the second channel area is extended from the first connection portion to the second connection portion, and a length of the first channel area is shorter than that of the second channel area.

Abstract: A thin film transistor substrate is provided, which comprises a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer having a first channel portion, a first gate insulating layer on the first active layer, a first gate electrode on the first gate insulating layer, a first source electrode connected to the first active layer, and a first drain electrode spaced apart from the first source electrode and connected to the first active layer, the second thin film transistor includes a conductive material layer on the substrate, a first buffer layer on the conductive material layer, a second active layer having a second channel portion on the first buffer layer, a second gate insulating layer on the second active layer, a second gate electrode on the second gate insulating layer, a second source electrode connected to the second active layer, and a second drain electrode spaced apart from the

Abstract: Embodiments of the present disclosure relate to a display device and a driving method of the display device. More particularly, a subpixel includes a first control transistor for controlling a connection between a body of a driving transistor and a first node of the driving transistor, and a second control transistor for controlling a connection between the body of the driving transistor and a second node of the driving transistor, so that it is possible to improve mobility and on-current performance while increasing a S-factor of the driving transistor.

Abstract: A display device and a driving method for a display device are provided. The display device uses a second storage capacitor and stably moves the threshold voltage of the driving transistor to a positive value in a diode-connected driving circuit. Accordingly, a compensation performance of a threshold voltage of a driving transistor may be improved.

Abstract: A display device and a driving method for a display device are provided. The display device uses a second storage capacitor and stably moves the threshold voltage of the driving transistor to a positive value in a diode-connected driving circuit. Accordingly, a compensation performance of a threshold voltage of a driving transistor may be improved.

Abstract: Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.

Abstract: Embodiments of the present disclosure relate to a display device and a driving method of the display device. More particularly, a subpixel includes a first control transistor for controlling a connection between a body of a driving transistor and a first node of the driving transistor, and a second control transistor for controlling a connection between the body of the driving transistor and a second node of the driving transistor, so that it is possible to improve mobility and on-current performance while increasing a S-factor of the driving transistor.

Abstract: An organic light emitting display panel includes a substrate, a driving transistor provided on the substrate, a first insulation layer covering the driving transistor, a second insulation layer covering the first insulation layer, a first electrode provided on the second insulation layer and connected to a first conductor part of the driving transistor, a second electrode provided on the second insulation layer and connected to a second conductor part of the driving transistor, a passivation layer covering the first electrode, the second electrode, and the second insulation layer, and an organic light emitting diode provided on the passivation layer, an anode configuring the organic light emitting diode is connected to the first conductor part, and the anode protrudes convexly from an upper surface of the passivation layer.

Abstract: Some embodiments may include a water supply system for supplying water based on a predetermined planned daily supply amount of water. While the worries supplied, it may be determined whether a second time has reached after a predetermined time passed from a first time. When it is determined that the second time has reached, an accumulated amount of the supplied water may be measured. A difference between the measured accumulated amount of the supplied water and the planned daily supply amount of water may be calculated. The planned daily supply amount of water may be corrected by adding the calculated difference to the planned daily supply amount of water after the second time. Water may be supplied based on the corrected planned daily supply amount of water.

Abstract: Disclosed are an organic light emitting display panel and an organic light emitting display device including the same, which include a blocking layer for blocking the inflow of scattered light, transferred from an organic light emitting diode, into a driving transistor. The organic light emitting display panel includes a substrate, a driving transistor provided on the substrate, a first insulation layer covering the driving transistor, a second insulation layer covering the first insulation layer, a first electrode provided on the second insulation layer and connected to a first conductor part of the driving transistor, a second electrode provided on the second insulation layer and connected to a second conductor part of the driving transistor, a passivation layer covering the first electrode, the second electrode, and the second insulation layer, and an organic light emitting diode provided on the passivation layer.