Patents by Inventor Mingwei HAO

Mingwei HAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Perovskite solar cells with flattened grain-boundary grooves and method for manufacturing the same
    Patent number: 12369448
    Abstract: A perovskite solar cell includes an electron-transport layer (ETL), a perovskite layer, and an HTL. The ETL is with an additive phase buried therein and disposed over a substrate with a bottom electrode. The perovskite layer is disposed above the ETL and is in contact with the ETL. The perovskite layer includes a plurality of grains which arranged on a top surface of the ETL along a direction, in which two of the adjacent grains have adjacent side surfaces to form a void there between over the top surface of the ETL. The top of the void defines a GBG side-angle with the direction, in which a mean GBG side-angle of the perovskite layer is in a range from 5 degrees to 30 degrees. A HTL is disposed over the perovskite layer and between a top electrode and the perovskite layer.
    Type: Grant
    Filed: June 29, 2023
    Date of Patent: July 22, 2025
    Assignee: Hong Kong Baptist University
    Inventors: Yuanyuan Zhou, Mingwei Hao
  • PEROVSKITE SOLAR CELLS WITH FLATTENED GRAIN-BOUNDARY GROOVES AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20240164120
    Abstract: A perovskite solar cell includes an electron-transport layer (ETL), a perovskite layer, and an HTL. The ETL is with an additive phase buried therein and disposed over a substrate with a bottom electrode. The perovskite layer is disposed above the ETL and is in contact with the ETL. The perovskite layer includes a plurality of grains which arranged on a top surface of the ETL along a direction, in which two of the adjacent grains have adjacent side surfaces to form a void there between over the top surface of the ETL. The top of the void defines a GBG side-angle with the direction, in which a mean GBG side-angle of the perovskite layer is in a range from 5 degrees to 30 degrees. A HTL is disposed over the perovskite layer and between a top electrode and the perovskite layer.
    Type: Application
    Filed: June 29, 2023
    Publication date: May 16, 2024
    Inventors: Yuanyuan ZHOU, Mingwei HAO