Abstract: A display device includes light-emitting elements disposed on an array substrate. The array substrate includes a substrate, switch elements disposed on the substrate, an insulating layer, a connecting layer, a conductive layer and a spacer layer. The insulating layer is disposed on the switching elements and has through holes. The connecting layer is disposed on the insulating layer and is electrically connected to the switching elements through the through holes. The conductive layer is disposed on the connecting layer and includes pads electrically connected to the connecting layer. The spacer layer disposed between the connecting layer and the conductive layer. The conductive layer extends on the spacer layer and is orthographically projected on the substrate to form a first orthographic projection area, where the through holes are located in the first orthographic projection.

Abstract: An interconnect structure and methods of forming the same are described. In some embodiments, the structure includes a first dielectric layer and one or more first conductive features disposed in the first dielectric layer. The one or more first conductive features includes a first metal. The structure further includes a plurality of graphene layers disposed on each of the one or more first conductive features, the plurality of graphene layers include a second metal intercalated therebetween, and the second metal is different from the first metal.

Abstract: An interconnection structure, along with methods of forming such, are described. The interconnection structure includes a first portion of a conductive layer, and the conductive layer includes one or more graphene layers. The first portion of the conductive layer includes a first interface portion and a second interface portion opposite the first interface portion, and each of the first and second interface portion includes a metal disposed between adjacent graphene layers. The structure further includes a second portion of the conductive layer disposed adjacent the first portion of the conductive layer, and the second portion of the conductive layer includes a third interface portion and a fourth interface portion opposite the third interface portion. Each of the third and fourth interface portion includes the metal disposed between adjacent graphene layers. The structure further includes a dielectric material disposed between the first and second portions of the conductive layer.

Abstract: A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure comprises at least one two-dimensional (2D) conductive structure; a dielectric structure disposed on the 2D conductive structure; and at least one interconnect structure disposed in the dielectric layer and extending into the 2D conductive structure. The interconnect structure laterally contacts the 2D conductive structure.

Abstract: An interconnection structure, along with methods of forming such, are described. The structure includes a dielectric material and a conductive feature extending through the dielectric material. The conductive feature includes a conductive material and has a first top surface. The structure further includes a dummy conductive feature disposed adjacent the conductive feature in the dielectric material, and the dummy conductive feature has a second top surface substantially co-planar with the first top surface. An air gap is formed in the dummy conductive feature.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor fin, removing a second portion of the semiconductor fin to form a recess, and forming a source/drain region starting from the recess. The formation of the source/drain region includes performing a first epitaxy process to grow a first semiconductor layer, wherein the first semiconductor layer has straight-and-vertical edges, and performing a second epitaxy process to grow a second semiconductor layer on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are of a same conductivity type.

Abstract: A semiconductor device includes an interconnect structure embedded in a first metallization layer comprising a dielectric material. The interconnect structure includes a first metal material. The semiconductor device includes a first liner structure embedded in the first metallization layer. The first liner structure is extended along one or more boundaries of the interconnect structure in the first metallization layer. The first liner structure includes a second metal material reacted with one or more dopants, the second metal material being different from the first metal material.

Abstract: In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor structure includes a substrate. A liner layer is arranged along a sidewall of the substrate within a cross-sectional view. A conductive 2D material is arranged on the liner layer within the cross-sectional view. The conductive 2D material includes a top surface that is above a top surface of the liner layer. A conductive structure continuously extends from above a top of the conductive 2D material to below a bottom of the conductive 2D material. The conductive 2D material and the liner layer laterally separate the substrate from the conductive structure.

Abstract: An interconnection structure, along with methods of forming such, are described. The interconnection structure includes a first portion of a conductive layer, and the conductive layer includes one or more graphene layers. The first portion of the conductive layer includes a first interface portion and a second interface portion opposite the first interface portion, and each of the first and second interface portion includes a metal disposed between adjacent graphene layers. The structure further includes a second portion of the conductive layer disposed adjacent the first portion of the conductive layer, and the second portion of the conductive layer includes a third interface portion and a fourth interface portion opposite the third interface portion. Each of the third and fourth interface portion includes the metal disposed between adjacent graphene layers. The structure further includes a dielectric material disposed between the first and second portions of the conductive layer.

Abstract: A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure comprises at least one two-dimensional (2D) conductive structure; a dielectric layer disposed on the 2D conductive structure; and at least one interconnect structure disposed in the dielectric layer and extending into the 2D conductive structure, wherein the interconnect structure laterally connects to at least one edge of the 2D conductive structure.

Abstract: An interconnection structure, along with methods of forming such, are described. The structure includes a dielectric material and a conductive feature extending through the dielectric material. The conductive feature includes a conductive material and has a first top surface. The structure further includes a dummy conductive feature disposed adjacent the conductive feature in the dielectric material, and the dummy conductive feature has a second top surface substantially co-planar with the first top surface. An air gap is formed in the dummy conductive feature.

Abstract: In an example, a device receives a configuration of a sidelink resource pool for sidelink data transmission and sidelink reference signal transmission. The device determines to perform a sidelink reference signal transmission in a first Transmission Time Interval (TTI) of the sidelink resource pool, wherein the sidelink reference signal transmission is associated with a destination identity (ID) and a source ID, and the sidelink reference signal transmission has a highest priority among one or more pending sidelink reference signals and one or more sidelink logical channels with pending sidelink data. The device generates a first sidelink data packet based on a first sidelink logical channel with first pending sidelink data, wherein the first sidelink data packet is associated with the destination ID and the source ID. The device performs, in the first TTI, the sidelink reference signal transmission and a sidelink data transmission for transmitting the first sidelink data packet.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor fin, removing a second portion of the semiconductor fin to form a recess, and forming a source/drain region starting from the recess. The formation of the source/drain region includes performing a first epitaxy process to grow a first semiconductor layer, wherein the first semiconductor layer has straight-and-vertical edges, and performing a second epitaxy process to grow a second semiconductor layer on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are of a same conductivity type.

Abstract: Immersion cooling systems, apparatus, and related methods for cooling electronic computing platforms and/or associated electronic components are disclosed herein. An example apparatus includes a first chamber including a first coolant disposed therein, the first coolant having a first boiling point. The example apparatus further includes a second chamber disposed in the first chamber, the second chamber to receive an electronic component therein. The second chamber includes a second coolant having a second boiling point different that the first boiling point. The second chamber is to separate the electronic component and the second coolant from the first coolant.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate. A first interconnect conductive structure extends through the first interconnect dielectric layer. A first capping layer is arranged over the first interconnect conductive structure, and a second capping layer is arranged over the first capping layer. The first capping layer includes a first two-dimensional material that is different than a second two-dimensional material of the second capping layer. An etch stop layer is arranged over the first interconnect dielectric layer and the second capping layer. The integrated chip further includes a second interconnect dielectric layer arranged over the etch stop layer and a second interconnect conductive structure extending through the second interconnect dielectric layer and the etch stop layer to contact the first interconnect conductive structure.

Abstract: A method and apparatus are disclosed. In an example from the perspective of a first device, the first device performs sidelink communication with a first set of destinations, wherein one or more devices, associated with a destination of the first set of destinations, discontinuously monitor one or more sidelink control channels and/or one or more sidelink control informations (SCIs). The first device receives a sidelink grant from a network, wherein the sidelink grant is for performing a sidelink transmission at a first timing. The first device selects, from among a second set of destinations, a first destination for the sidelink transmission, wherein each destination of the second set of destinations is determined to have an active time for sidelink containing the first timing.

Abstract: Methods, systems, and apparatuses are provided for a first device in a wireless communication system comprising receiving configuration for configuring a first dedicated sidelink resource pool for transmitting a Sidelink Positioning Reference Signal (SL-PRS) and a second sidelink resource pool for at least transmitting Physical Sidelink Shared Channel (PSSCH), using, when the first device attempts to transmit PSSCH and a second SL-PRS in the second sidelink resource pool in slot m, SL Channel Occupancy Ratio (CR) and SL Channel Busy Ratio (CBR) evaluated or measured or determined in slot m-k2 (in the second sidelink resource pool) for the PSSCH and the second SL-PRS, wherein k2 corresponds to a second congestion control processing time, and using, when the first device attempts to transmit a first SL-PRS in the first dedicated sidelink resource pool in slot n, SL-PRS-CR and SL-PRS-CBR evaluated or measured or determined in slot n-k1 (in the first dedicated sidelink resource pool) for the first SL-PRS, wherein

Abstract: A buffer packing apparatus for packing an object and increasing the buffering capacity between the object and a packaging box is provided. The buffer packing apparatus comprises a U-shaped column body and a pair of buffering sleeves. The two carrier boards in the U-shaped column body support the upper and lower surface of the object. The buffering sleeves are engaged to the respective ends of the U-shaped column body to form a buffering space for protecting the object against external impact. The corners of the buffer packing apparatus are also chamfered to increase the buffering capacity of buffering sleeves when the packaging box receives an external impact.

Abstract: A buffer packing apparatus for packing a plurality of objects is provided. The buffer packing apparatus comprises a plurality of rectangular partition boards and a plurality of buffer columns. The rectangular partition boards form a plurality of compartments for buffering and accommodating the objects. Through the selection of different buffer column designs, orientation of the objects inside the buffer packing apparatus can be easily identified. With chamfers on every corner of the buffer packing apparatus, the shock produced by an external impact can be readily absorbed thereby increasing the buffering capacity of the packing.