Abstract: Methods, systems, and apparatuses, including computer programs encoded on computer storage media, for performing operations represented by a neural network comprising a plurality of neural network layers. The methods comprise receiving a computation result of a multiplication operation between nodal inputs to a network layer of the neural network and corresponding nodal weights of the network layer. The computation result is of a first precision. The computation result is processed using a particular activation function to generate a layer output. The layer output is of a second precision that is lower than the first precision. The particular activation function is determined based on a quantization process using a power value other than the multiples of two. The particular activation function generates a non-zero output when the computation result is non-zero. A neural network output is generated for a corresponding network input based on the layer output.

Abstract: The present invention discloses an equivalent source and drain region optimized field-effect transistor device for solving the problem of short-channel effects of a field-effect transistor in the prior art. The field-effect transistor device includes an active layer, and the active layer includes a source region, a drain region and a channel region located between the source region and the drain region; when the device is on, an effective channel and an equivalent source region and an equivalent drain region away from the effective channel at least in the thickness direction of the channel region are formed in the channel region, and the field-effect transistor device communicates the source region and the drain region via the effective channel and the equivalent source region and the equivalent drain region to contribute a working current, wherein the length of the equivalent source region is greater than that of the equivalent drain region.

Abstract: The present invention discloses a field-effect transistor device having a blocking region, for use in solving the problem of short-channel effects of field-effect transistors in the prior art. The field-effect transistor device includes an active layer, and the active layer includes a source region, a drain region, and a channel region located between the source region and the drain region.

Abstract: A silicon-on-insulator (SOI) power device with introduced fixed charges is provided. The SOI power device is a shorted-anode—lateral insulated gate bipolar transistor (SA-LIGBT) or separated shorted-anode—lateral insulated gate bipolar transistor (SSA-LIGBT) structure, and includes a semiconductor substrate, a dielectric buried layer, and a semiconductor active layer stacked in sequence, where a first charge layer is provided between the dielectric buried layer and the semiconductor active layer, and/or a second charge layer is provided between a field oxide layer and the semiconductor active layer; and the charge layer carries continuously and uniformly distributed positive charges. The snapback present in the output characteristics of the traditional SA-LIGBT or SSA-LIGBT is addressed.

Abstract: The present invention discloses a field effect transistor device for improving the problem of the short-channel effect of a field effect transistor in the prior art, comprising: an active layer, comprising a source region, a drain region, and a channel region located between the source region and the drain region; a gate provided around the channel region; and a gate insulating layer provided between the gate and the channel region; wherein when a device is turned on, an effective channel, and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region and the drain region through the effective channel, and the equivalent source and/or equivalent drain to contribute an operating current.

Abstract: The present disclosure relates to a gapless hinge mechanism including an external gear plate, an internal gear assembly, a gap elimination unit, a cover plate, a driving wheel, and an axial limiting member. The external gear plate may be crimpedly connected to the internal gear assembly. A first internal hole may be disposed at a center of the external gear plate, and a central boss may be disposed at an opening of the first internal hole. A space A may be defined by the center boss and a central internal hole of the internal gear assembly. A gap elimination unit may be disposed in the space A. The present disclosure provides a miniaturized gapless hinge mechanism which not only provides a rotation function, but also eliminates loose gap in the rotation direction, solves the problem of loose feeling of the mechanism, and avoids problems such as noise due to vibration.

Abstract: The present invention provides a field effect transistor device and a method for improving the short-channel effect and the output characteristics using the same. The field effect transistor device comprises an active layer comprising a source region, a drain region, and a channel region located between the source region and the drain region; when the device is turned on, an effective channel and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region with the drain region through the effective channel, and the equivalent source and/or equivalent drain to form an operating current.

Abstract: The present invention discloses a field effect transistor device with a blocking region, which aims to address the problem of short channel effects of a field effect transistor in the prior art. The field effect transistor device includes an active layer, the active layer including a source region, a drain region and a channel region located between the source region and the drain region, wherein the channel region is provided with a carrier blocking region. The carrier blocking region serves to block carriers moving from the source region to the drain region when the device is turned off.

Abstract: The present invention discloses an equivalent source and drain region optimized field-effect transistor device for solving the problem of short-channel effects of a field-effect transistor in the prior art. The field-effect transistor device includes an active layer, and the active layer includes a source region, a drain region and a channel region located between the source region and the drain region; when the device is on, an effective channel and an equivalent source region and an equivalent drain region away from the effective channel at least in the thickness direction of the channel region are formed in the channel region, and the field-effect transistor device communicates the source region and the drain region via the effective channel and the equivalent source region and the equivalent drain region to contribute a working current, wherein the length of the equivalent source region is greater than that of the equivalent drain region.

Abstract: The present invention discloses a field effect transistor device for improving the problem of the short-channel effect of a field effect transistor in the prior art, comprising: an active layer, comprising a source region, a drain region, and a channel region located between the source region and the drain region; a gate provided around the channel region; and a gate insulating layer provided between the gate and the channel region; wherein when a device is turned on, an effective channel, and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region and the drain region through the effective channel, and the equivalent source and/or equivalent drain to contribute an operating current.

Abstract: The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.

Abstract: The present invention provides a field effect transistor device and a method for improving the short-channel effect and the output characteristics using the same. The field effect transistor device comprises an active layer comprising a source region, a drain region, and a channel region located between the source region and the drain region; when the device is turned on, an effective channel and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region with the drain region through the effective channel, and the equivalent source and/or equivalent drain to form an operating current.

Abstract: The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.

Abstract: The present invention discloses a bending test apparatus and method for a flexible sheet material. The apparatus comprises a mounting table and further comprises a clamping unit and a bending shaft unit. The clamping unit comprises a clamping part. The bending shaft unit comprises a bending shaft extending in a Z-axis direction. The bending shaft has an arc-shaped sidewall for abutting against a flexible sheet material at an end thereof away from the clamping part. The clamping part moves relative to the bending shaft in a Y-axis direction. The present invention has the following advantage: During a test, a flexible sheet material is bent with a lower external strain, has a wide adjustment curvature range, and the structure is optimized.

Abstract: The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.

Abstract: Disclosed is a thin-wall bonded self-lubricating plate, the composite material structure thereof being composed of a surface self-lubricating layer, an intermediate bonding layer, and a metal backing layer. The surface self-lubricating layer includes polytetrafluoroethylene, ultrahigh molecular weight polyethylene, etc. The surface self-lubricating layer thereof is thicker than an ordinary sintered self-lubricating material, thereby reducing vibration and prolonging the service life. Components, such as bushings, gaskets, sliding plates, composite bearings and other special-shaped members, made of the thin-wall bonded self-lubricating plate, have broad application prospects in low-speed rotation and relative sliding parts of vehicles, general machinery, office furniture, etc.

Abstract: The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.

Abstract: Disclosed is a thin-wall bonded self-lubricating plate, the composite material structure thereof being composed of a surface self-lubricating layer, an intermediate bonding layer, and a metal backing layer. The surface self-lubricating layer includes polytetrafluoroethylene, ultrahigh molecular weight polyethylene, etc. The surface self-lubricating layer thereof is thicker than an ordinary sintered self-lubricating material, thereby reducing vibration and prolonging the service life. Components, such as bushings, gaskets, sliding plates, composite bearings and other special-shaped members, made of the thin-wall bonded self-lubricating plate, have broad application prospects in low-speed rotation and relative sliding parts of vehicles, general machinery, office furniture, etc.

Abstract: The present invention discloses a bending test apparatus and method for a flexible sheet material. The apparatus comprises a mounting table and further comprises a clamping unit and a bending shaft unit. The clamping unit comprises a clamping part. The bending shaft unit comprises a bending shaft extending in a Z-axis direction. The bending shaft has an arc-shaped sidewall for abutting against a flexible sheet material at an end thereof away from the clamping part. The clamping part moves relative to the bending shaft in a Y-axis direction. The present invention has the following advantage: During a test, a flexible sheet material is bent with a lower external strain, has a wide adjustment curvature range, and the structure is optimized.

Abstract: The present application discloses a dredging system for a pre-paved gravel foundation bed surface in open sea deep water, including a dredging mechanism, which includes a dredging suction head, a power component and a dredging pipeline, wherein the dredging suction head is connected with the dredging pipeline; the dredging pipeline is communicated with the power component; the dredging suction head includes at least one ridge surface suction port and at least one furrow suction port; the openings of all the furrow suction ports are lower than those of all the ridge surface suction ports; a lifting mechanism, which is connected with the dredging suction head and is used for lifting the dredging suction head to the gravel foundation bed surface; a moving mechanism, which is connected with the lifting mechanism and is used for driving the dredging suction head to move within a dredging range of the gravel foundation bed surface.