Abstract: The present disclosure provides a kind of push-up underwear convenient for regulating cup spacing. The cup is symmetrically and movably set on a underwear, a regulating knob is below the center front of underwear, a regulating rope is in the regulating knob, a regulating rope is in a closed loop state, a rope fixing piece is at a bottom side cup, a cup rim is sewn onto the underwear, elastic fixing edge with narrow side is set at the cup rim, regulating rope is connected with the cup bottom, turning the regulating knob drive the regulating rope to pull the cup for convergence, under the acting force of elastic fixing edge, the cup can reset quickly by turning the regulating knob in the reverse direction, so as to realize the effect of quick regulation, and better wearing experience can be brought about to user.

Abstract: The present disclosure provides a kind of push-up underwear convenient for regulating cup spacing. The cup is symmetrically and movably set on a underwear, a regulating knob is below the center front of underwear, a regulating rope is in the regulating knob, a regulating rope is in a closed loop state, a rope fixing piece is at a bottom side cup, a cup rim is sewn onto the underwear, elastic fixing edge with narrow side is set at the cup rim, regulating rope is connected with the cup bottom, turning the regulating knob drive the regulating rope to pull the cup for convergence, under the acting force of elastic fixing edge, the cup can reset quickly by turning the regulating knob in the reverse direction, so as to realize the effect of quick regulation, and better wearing experience can be brought about to user.

Abstract: A method for processing a wafer includes subjecting the wafer to a reduction treatment with heat and a reducing agent that has a melting point of lower than 600° C. The wafer is made of a material selected from the group consisting of lithium tantalate, lithium niobate, and a combination thereof. The wafer and the reducing agent are spaced apart from each other so that the reducing agent indirectly interacts with the wafer during the reduction treatment. Also disclosed is a processed wafer obtained by the method.

Abstract: A substrate for epitaxial growth includes a central region that has a center of the substrate and that serves as a non-modified region, and a peripheral region that surrounds the central region in a manner to be spaced apart from the center of the substrate by a distance and that serves as a modified region having a plurality of modified points. A method for manufacturing a substrate for epitaxial growth includes providing a substrate and forming a plurality of modified points in an interior of the substrate in position corresponding to the modified region. A semiconductor device including the substrate and a method for manufacturing the semiconductor device are also disclosed.

Abstract: A substrate for epitaxial growth includes a first surface to be processed, and a second surface opposite to the first surface. When being viewed from above the first surface, the substrate is divided into a modified region and a non-modified region. The modified region is partitioned from the non-modified region by a border which is located at a predetermined position in the substrate, and has a plurality of modified points.

Abstract: A method for processing a lithium tantalate crystal substrate includes providing a lithium tantalate crystal substrate, roughening the lithium tantalate crystal substrate, providing a catalytic agent, bringing the lithium tantalate crystal substrate and the catalytic agent into contact with each other after the lithium tantalate crystal substrate is roughened, and subjecting the lithium tantalate crystal substrate to a reduction treatment. The reduction treatment is conducted at a temperature not higher than a Curie temperature of the lithium tantalate crystal substrate. The catalytic agent is selected from the group consisting of metal powder, metal gas, and metal carbonate powder.

Abstract: Disclosed in the embodiments of the present disclosure are a method and a device for constructing decision trees. A particular embodiment of the method comprises: sending, to at least one client, a request for acquiring statistical information of attribute information of a target category; receiving the statistical information of attribute information of the target category of samples stored by the clients; generating split point information according to the statistical information of attribute information of the target category of samples respectively stored by the clients, and sending the split point information to the at least one client.

Abstract: A method for making a semiconductor substrate includes: cutting an ingot to obtain a plurality of substrates, each of the substrates including a first surface and a second surface opposite to the first surface; performing a surface treatment on at least one of the first surface and the second surface of each of the substrates using a surface-treating agent; annealing the substrates; and abrasing each of the annealed substrates. A method for making a semiconductor device is also disclosed.

Abstract: A substrate for epitaxial growth includes a central region that has a center of the substrate and that serves as a non-modified region, and a peripheral region that surrounds the central region in a manner to be spaced apart from the center of the substrate by a distance and that serves as a modified region having a plurality of modified points. A method for manufacturing a substrate for epitaxial growth includes providing a substrate and forming a plurality of modified points in an interior of the substrate in position corresponding to the modified region. A semiconductor device including the substrate and a method for manufacturing the semiconductor device are also disclosed.

Abstract: A method for processing a lithium tantalate crystal substrate includes providing a lithium tantalate crystal substrate, roughening the lithium tantalate crystal substrate, providing a catalytic agent, bringing the lithium tantalate crystal substrate and the catalytic agent into contact with each other after the lithium tantalate crystal substrate is roughened, and subjecting the lithium tantalate crystal substrate to a reduction treatment. The reduction treatment is conducted at a temperature not higher than a Curie temperature of the lithium tantalate crystal substrate. The catalytic agent is selected from the group consisting of metal powder, metal gas, and metal carbonate powder.

Abstract: A method for processing a lithium tantalate crystal substrate includes providing a lithium tantalate crystal substrate and a metallic sheet, roughening at least one of the lithium tantalate crystal substrate and the metallic sheet, bringing the lithium tantalate crystal substrate and the metallic sheet into contact with each other after the at least one thereof is roughened, and subjecting the lithium tantalate crystal substrate to a reduction treatment. The reduction treatment is conducted at a temperature not higher than a Curie temperature of the lithium tantalate crystal substrate.

Abstract: A method for processing a wafer includes subjecting the wafer to a reduction treatment with heat and a reducing agent that has a melting point of lower than 600° C. The wafer is made of a material selected from the group consisting of lithium tantalate, lithium niobate, and a combination thereof. The wafer and the reducing agent are spaced apart from each other so that the reducing agent indirectly interacts with the wafer during the reduction treatment. Also disclosed is a processed wafer obtained by the method.

Abstract: A method for processing a lithium tantalate crystal substrate includes providing a lithium tantalate crystal substrate and a metallic sheet, roughening at least one of the lithium tantalate crystal substrate and the metallic sheet, bringing the lithium tantalate crystal substrate and the metallic sheet into contact with each other after the at least one thereof is roughened, and subjecting the lithium tantalate crystal substrate to a reduction treatment. The reduction treatment is conducted at a temperature not higher than a Curie temperature of the lithium tantalate crystal substrate.