Abstract: A display panel and a display device, including: a driving backplane, including a substrate, one or more driving circuits arranged in an array on the substrate, and one or more positive pads arranged on a side of the driving circuits facing away from the substrate; one or more pixel islands on the driving backplane, the pixel island including one or more first sub-pixels; one or more first electrode pad sets between the pixel islands and the driving backplane, and an orthographic projection of a first electrode pad set on the substrate being located in an orthographic projection of a corresponding pixel island on the substrate; the first electrode pad set including one or more first electrode pads, and the first electrode pads being bonded and connected to the positive pads.

Abstract: A light-emitting chip is provided including: an LED light-emitting unit configured to emit light of a first wavelength; and a light conversion unit on a light output side of the LED light-emitting unit, is configured to convert the light of the first wavelength into light of a second wavelength, and colors of the light of the first wavelength and the light of the second wavelength are different. The light conversion unit includes: a first bonding layer on the light output side of the LED light-emitting unit; a first quantum well layer on a side of the first bonding layer away from the LED light-emitting unit; and a first semiconductor layer on a side of the first quantum well layer away from the LED light-emitting unit. The first quantum well layer is configured to emit the light of the second wavelength under an excitation of the light of the first wavelength.

Abstract: A light-emitting substrate includes a driving backplane, a device stack layer, an isolation structure, a second electrode and a color conversion layer. The device stack layer includes a bonding layer, a first electrode layer, a first semiconductor layer, a light-emitting layer and a second semiconductor layer. The bonding layer is bonded to the driving backplane. The isolation structure separates the device stack layer into a plurality of light-emitting devices. A first recess in a surface of the second semiconductor layer separates the second semiconductor layer into a plurality of coloring regions. The second electrode is disposed in the first recess. The color conversion layer is disposed in a plurality of second recesses in a coloring region. Orthographic projections of the coloring region and a light-emitting device corresponding to the coloring region on the driving backplane overlap, and the light-emitting device is connected to a driving circuit of the driving backplane.

Abstract: Provided in the disclosure are a light-emitting chip and a preparation method thereof, a light-emitting substrate, and a display device. The light-emitting chip includes: a silicon-based substrate including a plurality of sub-pixel openings; a plurality of light-emitting devices formed on one side of the silicon-based substrate; wherein the light-emitting devices are in one-to-one correspondence to the sub-pixel openings, and orthographic projections of the light-emitting devices on the silicon-based substrate overlap with the sub-pixel openings; and a plurality of photoluminescent color films located in at least part of the sub-pixel openings.

Abstract: Provided is a chip structure. The chip structure includes a first substrate, light-emitting units, color conversion units, and a dam; wherein the color conversion units are disposed between the first substrate and the light-emitting units, light-emitting sides of the light-emitting units face towards the first substrate, and the dam is disposed on a side of each of the color conversion units and surrounds a periphery of each of the light-emitting units; each of the color conversion units includes a limiting dam and an optical functional portion, wherein an opening region is defined in the limiting dam, and the optical functional portion is disposed in the opening region and is configured to convert a color of light entering the optical functional unit.

Abstract: A display substrate is provided, including: a base substrate including a display area and a peripheral area at least partially surrounding the display area; and pixel units in the display area in an array along first and second directions intersecting with each other. At least one pixel unit includes: a reflective bonding structure including a first electrode, a first reflective electrode and a first bonding portion sequentially arranged on the base substrate; and an LED light-emitting unit including a second bonding portion, an LED epitaxial layer and a second electrode sequentially arranged on a side of the first bonding portion away from the base substrate. An orthographic projection of the second bonding portion on the base substrate is within that of the first bonding portion on the base substrate, and the first bonding portion and the second bonding portion include the same material.

Abstract: Provided in the present disclosure are a Micro LED display substrate, a manufacturing method therefor, and a display apparatus. The Micro LED display substrate includes a drive backplane, a plurality of Micro LED structures, and a plurality of color conversion structures. The plurality of Micro LED structures is disposed at intervals on the drive backplane and is electrically connected to the drive backplane. The Micro LED structures are used for emitting light of a same color; one color conversion structure corresponds to one Micro LED structure, and each color conversion structure is located on the side facing away from the drive backplane of the corresponding Micro LED structure, and is used for converting the light emitted by the corresponding Micro LED structure into light of a set color.

Abstract: Embodiments of the present disclosure provide a light-emitting device, a manufacturing method therefor, a display panel, and a display device, belonging to the field of display technology. The light-emitting device includes a light-emitting layer and a color conversion layer, and the light-emitting layer includes at least one light-emitting unit, and the color conversion layer is disposed on a first surface of the light-emitting layer. The color conversion layer includes multi-quantum wells and is made of inorganic material.

Abstract: A chip structure includes a first substrate, a light emitting unit, and a color conversion unit. The light-shielding layer in the color conversion unit may include a body portion, and an extension portion surrounding the body portion. After light emitted from each sub-light-emitting functional layer in the light-emitting unit is emitted to the second semiconductor layer, and light is generated inside the second semiconductor layer by an optical waveguide phenomenon, the light emitted from the edge of the second semiconductor layer can be absorbed by the extension in the light-shielding layer.

Abstract: The present disclosure provides a light-emitting device, a method for manufacturing a light-emitting device and a display apparatus, and belongs to the field of display technology, and can solve the problem that the light-emitting device in the related art has low luminescence efficiency. The light-emitting device of the present disclosure includes: a substrate, a light-emitting diode on the substrate and a color conversion layer on a side of the light-emitting diode away from the substrate; the light-emitting device further includes: nano-metal particles; a plurality of grooves are formed in a surface of the light-emitting diode away from the substrate; and the nano-metal particles are filled in the plurality of grooves.

Abstract: An optical path structure, an optical path system, and a transfer method. The optical path structure includes a beam adjustment module configured to adjust a diameter of a laser beam and output a first beam; a beam shaping module configured to perform energy homogenization on the first beam to obtain a second beam; and a beam focusing module configured to focus the second beam and output a target light spot; the target light spot is used for irradiating a device substrate, so that a bonding material in the device substrate changes after being irradiated by the target light spot, and a target device is separated from a carrier substrate; where the bonding material is disposed between the target device and the carrier substrate.

Abstract: A light emitting chip includes a light emitting layer, a polarization structure, an auxiliary structure and a dielectric layer. The light emitting layer includes first and second semiconductor layers, and a quantum well layer therebetween. The polarization structure is on a side of the second semiconductor layer away from the quantum well layer, and allows first linear polarized light in emitted light to exit and reflects second linear polarized light. The auxiliary structure is on a side of the polarization structure facing the light emitting layer, and converts the second linear polarized light reflected into light including first linear polarized light and propagating toward the polarization structure. The dielectric layer is in direct contact with the second semiconductor layer.

Abstract: A light-emitting device includes a metal wire grid; a first semiconductor layer located on a side of the metal wire grid; a light-emitting layer located on a side of the first semiconductor layer away from the metal wire grid; a second semiconductor layer located on a side of the light-emitting layer away from the metal wire grid, a surface of the second semiconductor layer away from the first semiconductor layer being provided with a plurality of grooves; and a phase deflection layer covering the second semiconductor layer, and portions of the phase deflection layer being located in the plurality of grooves.

Abstract: Provided is a light-emitting chip. The light-emitting unit includes a plurality of light-emitting parts; the light-emitting unit further includes a second semiconductor layer, wherein the second semiconductor layer is disposed on light-emitting sides of the plurality of light-emitting parts; wherein a surface of the second semiconductor layer facing away from the color converting unit is a second surface, and the second semiconductor layer includes a first groove that opens in the second surface; and the light-emitting chip further includes a filling part disposed in the first groove, wherein the filling part is made of an opaque material.

Abstract: A semiconductor apparatus and a method for manufacturing the semiconductor apparatus are provided. The semiconductor apparatus includes: a base substrate; a chip arranged on the base substrate, wherein the chip includes a chip main body and a plurality of terminals arranged on the chip main body; a terminal expansion layer arranged on the base substrate, the terminal expansion layer including a conductive material, and the terminal expansion layer and at least one terminal are located on a same side of the chip main body; and a plurality of expansion wires in the terminal expansion layer, wherein the plurality of expansion wires are electrically connected to the plurality of terminals, respectively, to lead out the plurality of terminals, wherein an orthographic projection of at least one expansion wire on the base substrate completely covers an orthographic projection of a terminal electrically connected to the expansion wire on the base substrate.

Abstract: A light emitting device and a light emitting apparatus are provided. The light emitting device includes at least two epitaxial structures provided in a first direction and connected in series, wherein two current diffusion layers and a transparent adhesive layer are provided between two adjacent epitaxial structures, a current diffusion layer is provided at one side of each of the two adjacent epitaxial structures, the transparent adhesive layer is provided between the two current diffusion layers, and metal nanoparticles are provided in the transparent adhesive layer.

Abstract: A display panel and a display device, including: a driving backplane, including a substrate, one or more driving circuits arranged in an array on the substrate, and one or more positive pads arranged on a side of the driving circuits facing away from the substrate; one or more pixel islands on the driving backplane, the pixel island including one or more first sub-pixels; one or more first electrode pad sets between the pixel islands and the driving backplane, and an orthographic projection of a first electrode pad set on the substrate being located in an orthographic projection of a corresponding pixel island on the substrate; the first electrode pad set including one or more first electrode pads, and the first electrode pads being bonded and connected to the positive pads.

Abstract: A manufacturing method of light-emitting diode substrate and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: obtaining an epitaxial layer group of M light-emitting diode chips grown on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate; the light-emitting diode chips corresponding to the N epitaxial layer groups on the N substrates are configured to emit light of a same color; M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.

Abstract: A display substrate and a display device are provided. The display substrate includes a backplane including a plurality of pixel regions; and light emitting units arranged in one-to-one correspondence with the plurality of pixel regions. Each light emitting unit includes light emitting sub-units arranged in a plurality of rows and a plurality of columns, each row of light emitting sub-units includes a plurality of light emitting sub-units arranged along a row direction, each column of light emitting sub-units includes one light emitting sub-unit, and orthographic projections of light emitting regions of two adjacent columns of light emitting sub-units on a first straight line extending along a column direction are not overlapped; and in each light emitting unit, there is no gap between orthographic projections of the light emitting regions of the two adjacent columns of light emitting sub-units on a second straight line extending along the row direction.

Abstract: A semiconductor apparatus and a method for manufacturing the semiconductor apparatus are provided. The semiconductor apparatus includes: a base substrate; a plurality of chips arranged on the base substrate each including a chip main body and a plurality of terminals arranged thereon; a plurality of fixed connection portions arranged on the base substrate, and adjacent to the plurality of chips; a terminal expansion layer arranged on the base substrate; and a plurality of expansion wires in the terminal expansion layer and configured to electrically connect the chips, wherein an expansion wire configured to electrically connect two chips includes at least a first wire segment and a second wire segment, and the first wire segment is configured to electrically connect a terminal of a chip and a fixed connection portion adjacent to the chip, and the second wire segment is configured to connect two fixed connection portions between the two chips.