Abstract: A semiconductor apparatus and a method for manufacturing the semiconductor apparatus are provided. The semiconductor apparatus includes: a base substrate; a plurality of chips arranged on the base substrate each including a chip main body and a plurality of terminals arranged thereon; a plurality of fixed connection portions arranged on the base substrate, and adjacent to the plurality of chips; a terminal expansion layer arranged on the base substrate; and a plurality of expansion wires in the terminal expansion layer and configured to electrically connect the chips, wherein an expansion wire configured to electrically connect two chips includes at least a first wire segment and a second wire segment, and the first wire segment is configured to electrically connect a terminal of a chip and a fixed connection portion adjacent to the chip, and the second wire segment is configured to connect two fixed connection portions between the two chips.

Abstract: A display substrate and a display device are provided. The display substrate includes a backplane including a plurality of pixel regions; and light emitting units arranged in one-to-one correspondence with the plurality of pixel regions. Each light emitting unit includes light emitting sub-units arranged in a plurality of rows and a plurality of columns, each row of light emitting sub-units includes a plurality of light emitting sub-units arranged along a row direction, each column of light emitting sub-units includes one light emitting sub-unit, and orthographic projections of light emitting regions of two adjacent columns of light emitting sub-units on a first straight line extending along a column direction are not overlapped; and in each light emitting unit, there is no gap between orthographic projections of the light emitting regions of the two adjacent columns of light emitting sub-units on a second straight line extending along the row direction.

Abstract: A chip structure includes a chip wafer unit and a color conversion substrate unit disposed on a light-exit side of the chip wafer unit. The chip wafer unit includes a light-emitting layer and an electrode layer sequentially stacked in a first direction. The light-emitting layer includes light-emitting portions. Each light-emitting portion includes at least two light-emitting sub-portions. The electrode layer includes a cathode, connection electrodes, and anodes in one-to-one correspondence with the light-emitting portions. The at least two light-emitting sub-portions are sequentially connected through at least one connection electrode. Among the at least two light-emitting sub-portions sequentially connected, a first one light-emitting sub-portion is a first selected light-emitting sub-portion, and a last one light-emitting sub-portion is a second selected light-emitting sub-portion.

Abstract: A driving backplane, a display panel and a display apparatus are provided. The driving backplane includes: a base substrate, and a plurality of connection electrode groups and a plurality of correction structures disposed on the base substrate, each of the connection electrode groups includes: a first connection electrode and a second connection electrode the first connection electrode and the second connection electrode are arranged on a same layer; a first gap is formed between the first connection electrode and the second connection electrode, and a first group of opposite edges includes: an edge, close to the first gap, of the first connection electrode; and an edge, close to the first gap, of the second connection electrode; a second group of opposite edges includes: an edge, far away from the first gap, of the first connection electrode; and an edge, far away from the first gap, of the second connection electrode.

Abstract: A light-emitting diode substrate, a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: forming an epitaxial layer group of M light-emitting diode chips on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of N*M light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate, an area of the transition carrier substrate is greater than or equal to a sum of areas of the N substrates, M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.

Abstract: A chip structure is provided. The chip structure includes: a chip wafer unit and a color conversion layer unit arranged on a light-exit side of the chip wafer unit. The chip wafer unit includes a plurality of sub-pixel light-emitting function layers. The color conversion layer unit includes color conversion layers arranged on the light-exit side of the chip wafer unit. The chip structure further includes: an attaching layer, arranged between the chip wafer unit and the color conversion layer unit and configured to attach the chip wafer unit and the color conversion layer unit.

Abstract: A display substrate includes a driving backplane, and a light-emitting device layer located on a side of the driving backplane. The light-emitting device layer includes a plurality of light-emitting units; a plurality of transparent electrodes which are located on surfaces of the plurality of light-emitting units away from the driving backplane and electrically connected to the light-emitting units; and a first bonding pattern which is at least located between the plurality of transparent electrodes. The first bonding pattern is electrically connected to at least one transparent electrode.

Abstract: A chip structure is provided. The chip structure includes a chip wafer unit and a color conversion layer substrate unit arranged on a light-exit side of the chip wafer unit. The chip wafer unit includes a plurality of sub-pixel light-emitting functional layers. The color conversion layer substrate unit includes a color conversion layer arranged on the light-exit side of the chip wafer unit. The chip wafer unit further includes a first bonding layer, arranged between the sub-pixel light-emitting functional layers and the color conversion layer, and configured to bond the chip wafer unit and the color conversion layer substrate unit.

Abstract: An optical construction (100) includes a lightguide (102), a transmissive reflector (112), and an optical sensor (114). The lightguide (102) includes a first major surface (104) and a second major surface (106) opposite to the first major surface (104). The first major surface (104) includes a first portion (108) and an adjoining second portion (110). The transmissive reflector (112) is disposed adjacent to the first major surface (104) of the lightguide (102). The optical sensor (114) is disposed adjacent to the transmissive reflector (112) opposite to the lightguide (102). The optical sensor (114) is aligned with the first portion (108) of the first major surface (104) of the lightguide (102), such that the optical sensor (114) receives at least a portion of light passing through the first portion (108) of the first major surface (104) and transmitted by the transmissive reflector (112).

Abstract: The present disclosure provides a light-emitting device, a method for manufacturing a light-emitting device and a display apparatus, and belongs to the field of display technology, and can solve the problem that the light-emitting device in the related art has low luminescence efficiency. The light-emitting device of the present disclosure includes: a substrate, a light-emitting diode on the substrate and a color conversion layer on a side of the light-emitting diode away from the substrate; the light-emitting device further includes: nano-metal particles; a plurality of grooves are formed in a surface of the light-emitting diode away from the substrate; and the nano-metal particles are filled in the plurality of grooves.

Abstract: Provided in the disclosure are a light-emitting chip and a preparation method thereof, a light-emitting substrate, and a display device. The light-emitting chip includes: a silicon-based substrate including a plurality of sub-pixel openings; a plurality of light-emitting devices formed on one side of the silicon-based substrate; wherein the light-emitting devices are in one-to-one correspondence to the sub-pixel openings, and orthographic projections of the light-emitting devices on the silicon-based substrate overlap with the sub-pixel openings; and a plurality of photoluminescent color films located in at least part of the sub-pixel openings.

Abstract: An embodiment of the present disclosure provides a light emitting diode chip, including: a light emitting functional layer including a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially stacked, and a second semiconductor layer including a plurality of second semiconductor patterns which are arranged at intervals; a first electrode layer including a first electrode pattern electrically coupled to the first semiconductor layer; a second electrode layer disposed on a side, away from the light emitting layer, of the second semiconductor layer and including a plurality of second electrode patterns in one-to-one correspondence with the second semiconductor patterns, and the second electrode patterns are electrically coupled to the second semiconductor patterns correspondingly. Embodiments of the present disclosure further provide a method for manufacturing a light emitting diode chip and a display device.

Abstract: A color film substrate and a method of manufacturing the same, a display substrate and a method of manufacturing the same and a display device are provided. The color film substrate includes: a base substrate; a plurality of pixel units arranged on the base substrate, each unit includes a plurality of sub-pixels; the pixel unit includes: a barrier including a first barrier arranged around a peripheral side of the pixel unit and a second barrier arranged between adjacent sub-pixels, and the plurality of sub-pixels include a first sub-pixel for color conversion and a second sub-pixel for scattering; a color conversion material layer arranged in the first sub-pixel; a scattering material layer arranged in the second sub-pixel; at least one of the first barrier and the second barrier is in a same layer as the scattering material layer (50), and has the same material as that of the scattering material layer.

Abstract: An optical path structure, an optical path system, and a transfer method. The optical path structure includes a beam adjustment module configured to adjust a diameter of a laser beam and output a first beam; a beam shaping module configured to perform energy homogenization on the first beam to obtain a second beam; and a beam focusing module configured to focus the second beam and output a target light spot; the target light spot is used for irradiating a device substrate, so that a bonding material in the device substrate changes after being irradiated by the target light spot, and a target device is separated from a carrier substrate; where the bonding material is disposed between the target device and the carrier substrate.

Abstract: A light emitting device and a light emitting apparatus are provided. The light emitting device includes at least two epitaxial structures provided in a first direction and connected in series, wherein two current diffusion layers and a transparent adhesive layer are provided between two adjacent epitaxial structures, a current diffusion layer is provided at one side of each of the two adjacent epitaxial structures, the transparent adhesive layer is provided between the two current diffusion layers, and metal nanoparticles are provided in the transparent adhesive layer.

Abstract: A light-emitting diode (LED) chip includes a plurality of epitaxial structures, at least one first electrode, and a plurality of second electrodes. Any two adjacent epitaxial structures of the plurality of epitaxial structures have a gap therebetween. Each epitaxial structure includes a first semiconductor pattern, a light-emitting pattern and a second semiconductor pattern stacked in sequence. First semiconductor patterns in at least two of the plurality of epitaxial structures are connected to each other to form a first semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. Each second electrode is electrically connected to the second semiconductor pattern in at least one of the plurality of epitaxial structures.

Abstract: An optical construction (100) includes a lightguide (102), a transmissive reflector (112), and an optical sensor (114). The lightguide (102) includes a first major surface (104) and a second major surface (106) opposite to the first major surface (104). The first major surface (104) includes a first portion (108) and an adjoining second portion (110). The transmissive reflector (112) is disposed adjacent to the first major surface (104) of the lightguide (102). The optical sensor (114) is disposed adjacent to the transmissive reflector (112) opposite to the lightguide (102). The optical sensor (114) is aligned with the first portion (108) of the first major surface (104) of the lightguide (102), such that the optical sensor (114) receives at least a portion of light passing through the first portion (108) of the first major surface (104) and transmitted by the transmissive reflector (112).

Abstract: A LED chip, including: substrate; LEDs on side of the substrate, each including first semiconductor pattern, light emission pattern, second semiconductor pattern sequentially stacked, the first semiconductor patterns of at least two LEDs being formed as single piece to constitute first semiconductor layer; at least one first electrode on side of first semiconductor layer away from the substrate and electrically coupled to first semiconductor layer; second electrodes on side of the second semiconductor patterns away from the substrate, each being electrically coupled to second semiconductor pattern of corresponding LED; pixel defining layer on side of the substrate away from LED, and having pixel openings in one-to-one correspondence with LEDs; and a color conversion pattern within at least two pixel openings, and converting light of first color emitted by the light emission pattern into light of target color other than the first color. The LED chip is Mini-LED or Micro-LED chip.

Abstract: A light-emitting diode (LED) chip includes a plurality of epitaxial structures, at least one first electrode, and a plurality of second electrodes. Any two adjacent epitaxial structures of the plurality of epitaxial structures have a gap therebetween. Each epitaxial structure includes a first semiconductor pattern, a light-emitting pattern and a second semiconductor pattern stacked in sequence. First semiconductor patterns in at least two of the plurality of epitaxial structures are connected to each other to form a first semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. Each second electrode is electrically connected to the second semiconductor pattern in at least one of the plurality of epitaxial structures.

Abstract: A light-emitting diode substrate, a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: forming an epitaxial layer group of M light-emitting diode chips on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of N*M light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate, an area of the transition carrier substrate is greater than or equal to a sum of areas of the N substrates, M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.