Abstract: In a pattern formation method, a photoresist layer is formed over a substrate by combining a first precursor and a second precursor in a vapor state to form a photoresist material. The first precursor is an organometallic having a formula MaRbXc, where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te, R is an alkyl group that is substituted by different EDG and/or EWG, X is a halide or sulfonate group, and 1?a?2, b?1, c?1, and b+c?4. The second precursor is water, an amine, a borane, and/or a phosphine. The photoresist material is deposited over the substrate, and selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method includes placing a first package component over a vacuum boat, wherein the vacuum boat comprises a hole, and wherein the first package component covers the hole. A second package component is placed over the first package component, wherein solder regions are disposed between the first and the second package components. The hole is vacuumed, wherein the first package component is pressed by a pressure against the vacuum boat, and wherein the pressure is generated by a vacuum in the hole. When the vacuum in the hole is maintained, the solder regions are reflowed to bond the second package component to the first package component.

Abstract: A memory device includes a plurality of computing memory cells, each of which stores a weight value, receives an input value and generates an output value. Each of the computing memory cells includes a transistor connected to a bit line and a word line, receiving a sensing current through the bit line and receiving an input voltage through the word line. When the sensing current flows through the transistor, the computing memory cell generates a first voltage difference corresponding to the output value. The output value is equal to a product of the input value and the weight value.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A dynamic image processing method is executed by an electronic device communicating with a photographing device and reading an executable code to identify a preset object by using artificial intelligence, and perform dynamic image processing for the preset object. The method includes the steps of identifying the preset object, image filtering and forming a concatenated video. In the step of image filtering, a filter condition is set, the filter condition includes detecting a movement variable of the preset object in the initial image, and when the filter condition meets a threshold, a catch moment in the initial image is selected. In the step of forming a concatenated video, at least one video clip in the initial image is selected according to the catch moment, and the video clip is assembled to form the concatenated video. The present disclosure also provides an electronic device and a terminal device.

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A CMOS image sensor includes a unit pixel array including a photodiode array, a color filter array, a micro-lens array, and a grid isolation structure laterally separating adjacent color filters. The grid isolation structure includes a first low-n grid, a second low-n grid underlying the first low-n grid, and a metal grid within the second low-n grid, the first low-n grid being narrower than the second low-n grid. The color filter array includes color filter matrixes, all color filter matrixes have the same arrangement pattern. Sizes of color filters in each color filter matrix vary depending on locations of the color filters in the color filter matrix. In an edge portion, a distance between a center of a color filter matrix and a center of a corresponding unit pixel matrix in plan view varies depending on a location of the unit pixel matrix in the CMOS image sensor.

Abstract: An embodiment of the invention provides a method for configuring a transmitter (Tx) bandwidth (BW) and a receiver (Rx) BW of a communication apparatus, including: transmitting a first capability of a Tx and a second capability of an Rx to a network device; receiving at least one configuration associated to the first capability and the second capability from the network device; and configuring the Tx BW and the Rx BW according to the at least one configuration; wherein the Tx BW is in a Tx channel BW (CBW), and the Rx BW is in an Rx CBW.

Abstract: A method includes forming a dielectric layer over a conductive feature, and etching the dielectric layer to form an opening. The conductive feature is exposed through the opening. The method further includes forming a tungsten liner in the opening, wherein the tungsten liner contacts sidewalls of the dielectric layer, depositing a tungsten layer to fill the opening, and planarizing the tungsten layer. Portions of the tungsten layer and the tungsten liner in the opening form a contact plug.

Abstract: An electronic device may have peripheral conductive housing structures, a display frame, a support plate, a logic board, and an antenna. The antenna may have a resonating element that includes a first slot between the logic board and a segment of the peripheral conductive housing structures, a second slot between the display frame and the segment, and optionally a third slot between the support plate and the segment. The slots may be at least partially overlapping, may have respective lengths, may be located at respective distances from a cover layer for the display, and may collectively receive radio-frequency signals in a frequency band such as the L5 GPS band. Switching circuitry and filter circuitry may be coupled to the antenna feed and/or to the antenna feed (s) of one or more adjacent antennas in the electronic device to help to isolate the antennas from each other.

Abstract: A foldable seat assembly for a personal transport device is described. The seat assembly includes a seat having a seat surface and a seat post attached to an underside of the seat. The seat assembly also includes a latching mechanism having a pivot mechanism, a clamp located above the pivot mechanism, a latch arm attached to the pivot mechanism at a pivot end of the latch arm, a hooked catch disposed at a catch end of the latch arm opposite the pivot end, and a catch receiver associated with the underside of the seat. The catch receiver engages with the hooked catch of the latch arm. When the clamp is in a locked position, the hooked catch exerts a downward clamping force on the catch receiver to secure the seat in a riding configuration so that the seat surface has a horizontal orientation.

Abstract: A compact personal transport device convertible between a riding configuration and a stowed configuration is described. In one embodiment, a seat post release and handlebar holding mechanism for the personal transport device includes a frame post attached internally and a seat post including an opening on one side that fits onto the frame post. The seat post release and handlebar holding mechanism also includes a latch connected inside the frame post to a pivot point. The latch extends outwards from one side of the frame post and extends through the opening in the seat post in a secured position. The seat post release and handlebar holding mechanism also includes a lever member attached to the latch at a first end and having an engaging surface at an opposite second end extending out from the frame post on an opposite side from the latch.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.

Abstract: A pixel sensor array of an image sensor device described herein may include a deep trench isolation (DTI) structure that includes a plurality of DTI portions that extend into a substrate of the image sensor device. Two or more subsets of the plurality of DTI portions may extend around photodiodes of a pixel sensor of the pixel sensor array, and may extend into the substrate to different depths. The different depths enable the photocurrents generated by the photodiodes to be binned and used to generate unified photocurrent. In particular, the different depths enable photons to intermix in the photodiodes, which enables quadradic phase detection (QPD) binning for increased PDAF performance. The increased PDAF performance may include increased autofocus speed, increased high dynamic range, increased quantum efficiency (QE), and/or increased full well conversion (FWC), among other examples.

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A universal memory for In-Memory Computing and an operation method thereof are provided. The universal memory includes at least one write word line, at least one unit cell and at least one read word line. The unit cell includes a write transistor and a read transistor. The gate of the write transistor is connected to the write word line. The write transistor is a transistor with adjustable threshold voltage. The gate of the read transistor is connected to the drain or the source of the write transistor. The read word line is connected to the drain or the source of the read transistor. The universal memory is used for a training mode and an inference mode. In the training mode and the inference mode, a weight is stored at different locations of the unit cell.

Abstract: A method for allocating wireless resources based on sensitivity to interference provides a base station controller which, within an area of overlap of adjacent wireless cells, determines a set of neighboring cell pairs from a plurality of cells. The base station controller sorts the set of neighboring cell pairs according to the number of inner-pair interfered user equipment devices of each neighboring cell pair where inner-pair interfered user equipment devices are user equipment devices located in coverage areas of the neighboring cell pair and allocates resource blocks for each neighboring cell pair sequentially based on the sorted set. An apparatus employing the method is also disclosed.

Abstract: A method for allocating wireless resources for a number of user equipment in a wireless communication system is applied in an apparatus. The apparatus collects the traffic demands of all the user equipment and then selects a beam based on the traffic demands of all the user equipment in every time slot to make better utilization of resource blocks.