Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: A semiconductor device including a substrate, a magnetic core and a conductor coil is provided. The magnetic core is disposed on the substrate, and formed by sub-layers of different materials stacked alternatively on one another. The conductor coil is disposed on the substrate, wherein the magnetic core partially extends to a level between an upper surface of the conductor coil and a bottom surface of the conductor coil.

Abstract: An interconnect structure is formed, including a plurality of patterned metallization layers spaced apart by dielectric material on the semiconductor wafer. A radio frequency (RF) inductor device is formed on the interconnect structure. To this end, a copper inductor coil is formed on the interconnect structure by plating. The plated copper inductor coil is textured copper having at least 90% (111) orientation. The plated copper inductor coil is electrically connected with at least one patterned metallization layer of the interconnect structure. Upper domes may be formed on turns of the plated copper inductor coil.

Abstract: An image sensor structure and methods of forming the same are provided. An image sensor structure according to the present disclosure includes a semiconductor substrate including a photodiode, a transfer gate transistor disposed over the semiconductor substrate and having a first channel area, a first dielectric layer disposed over the semiconductor substrate, a semiconductor layer disposed over the first dielectric layer, a source follower transistor disposed over the semiconductor layer and having a second channel area, a row select transistor disposed over the semiconductor layer and having a third channel area, and a reset transistor disposed over the semiconductor layer and having a fourth channel area. The second channel area is greater than the first channel area, the third channel area or the fourth channel area.

Abstract: Semiconductor structures and methods are provided. An exemplary method includes depositing forming a first metal-insulator-metal (MIM) capacitor over a substrate and forming a second MIM capacitor over the first MIM capacitor. The forming of the first MIM capacitor includes forming a first conductor plate over a substrate, the first conductor plate comprising a first metal element, conformally depositing a first dielectric layer on the first conductor plate, the first dielectric layer comprising the first metal element, forming a first high-K dielectric layer on the first dielectric layer, conformally depositing a second dielectric layer on the first high-K dielectric layer, the second dielectric layer comprising a second metal element, and forming a second conductor plate over the second dielectric layer, the second conductor plate comprises the second metal element.

Abstract: A universal memory device includes an array of universal memory cells. Each universal memory cell includes a write transistor and a read transistor. The write transistor has a gate terminal configured to receive a gate voltage to turn on or off the write transistor, a first terminal configured to receive a write voltage, and a second terminal coupled to a gate terminal of the read transistor. The read transistor includes a charge trap layer at the gate terminal of the read transistor. The charge trap layer is configured to: be unalterable when the first write voltage is applied at the first terminal of the write transistor, and be alterable when the second write voltage is applied at the first terminal of the write transistor to change a threshold voltage of the read transistor. The second write voltage is greater than the first write voltage.

Abstract: A semiconductor processing apparatus includes a wafer chuck configured to hold a wafer on a top surface thereof. A plurality of lift-pin holes vertically extends through a chuck body of the wafer chuck. A plurality of lift pins are located in the plurality of lift-pin holes. A plurality of vacuum seal assemblies is located on a bottom portion of a respective one of the plurality of lift pins. Each vacuum seal assembly within the plurality of vacuum seal assemblies includes a respective set of ring segments that are configured to be assembled into a respective contiguous structure under a condition of an upward gas flow within a respective lift-pin hole selected from the plurality of lift-pin holes. Leaks in a vacuum seal between the wafer and the wafer chuck can be remedied by formation of at least one contiguous structure that provides an additional vacuum seal.

Abstract: A mounting bracket for a foldable transport device includes a top portion, a bottom portion, a front wall connecting the top portion and the bottom portion, a first foot peg mounted to the mounting bracket by a first pin and moveably connected to the mounting bracket between a stowed configuration and a riding configuration, and a second foot peg mounted to the mounting bracket by a second pin and moveably connected to the mounting bracket between a stowed configuration and a riding configuration.

Abstract: A semiconductor structure including a first dielectric layer and a conductive pattern is provided. The conductive pattern is disposed in the first dielectric layer, wherein the conductive pattern comprises an alloy layer and a first conductive layer, the alloy layer surrounds sidewalls and a bottom surface of the first conductive layer, a material of the alloy layer comprises an alloy of at least two metals, and at least one of the at least two metals relative to the rest of the at least two metals tends to be reacted with a dielectric material of the first dielectric layer.

Abstract: A rear wheel latching mechanism for a personal transport device and a corresponding personal transport device are provided. The mechanism includes a rear wheel attached to an arm, which includes an inner extrusion that slides on one axis of a fixed frame in a horizontal direction. The fixed frame comprises an outer extrusion that surrounds the inner extrusion. The mechanism also includes a rear wheel cam-latch, configured to lock the inner extrusion and the outer extrusion together. The rear wheel cam-latch allows the rear wheel to articulate when the rear wheel cam-latch is unlatched between a stored state and a deployed state. The mechanism also includes a rear wheel pin that catches and holds the rear wheel in the deployed state to fix a front portion of the inner extrusion and a rear portion of the outer extrusion before the rear wheel cam-latch clamps the inner and outer extrusions together.

Abstract: A gait evaluating system including a processor is provided. The processor identifies whether a gait type of the user belongs to a normal gait, a non-neuropathic gait or a neuropathic gait based on step feature values of a user and walking limb feature values of the user. In response to that the gait type of the user belongs to the non-neuropathic gait, the processor controls the display panel to display a first auxiliary information, a second auxiliary information, and a third auxiliary information. The first auxiliary information indicates a potential sarcopenia of the user. The second auxiliary information indicates a dietary guideline for muscle building and muscle strengthening. The third auxiliary information shows a motion instruction video for regaining or maintaining muscle strength of the user.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1?a?2, b?1, c?1, and b+c?4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.

Abstract: A memory device includes several computing memory cells each storing a weight value and comprising a first and a second switch elements and a first and a second resistors. The first switch element receives a sensing current and a first input signal related to the input value. The first resistor selectively receives the sensing current through the first switch element in response to the first input signal. The second switch element receives the sensing current and a second input signal related to the input value. The second resistor selectively receives the sensing current through the second switch element in response to the second input signal. When the sensing current flows through the first resistor or the second resistor, the computing memory cell generates a first voltage difference or a second voltage difference corresponding to an output value equal to product of an input value and a weight value.

Abstract: A method for allocating wireless resources based on sensitivity to interference provides a base station controller which, within an area of overlap of adjacent wireless cells, determines a set of neighboring cell pairs from a plurality of cells. The base station controller sorts the set of neighboring cell pairs according to the number of inner-pair interfered user equipment devices of each neighboring cell pair where inner-pair interfered user equipment devices are user equipment devices located in coverage areas of the neighboring cell pair and allocates resource blocks for each neighboring cell pair sequentially based on the sorted set. An apparatus employing the method is also disclosed.

Abstract: A method for allocating wireless resources for a number of user equipment in a wireless communication system is applied in an apparatus. The apparatus collects the traffic demands of all the user equipment and then selects a beam based on the traffic demands of all the user equipment in every time slot to make better utilization of resource blocks.

Abstract: A method for allocating wireless resources based on sensitivity to interference provides a base station controller which, within an area of overlap of adjacent wireless cells, determines a set of neighboring cell pairs from a plurality of cells. The base station controller sorts the set of neighboring cell pairs according to the number of inner-pair interfered user equipment devices of each neighboring cell pair where inner-pair interfered user equipment devices are user equipment devices located in coverage areas of the neighboring cell pair and allocates resource blocks for each neighboring cell pair sequentially based on the sorted set. An apparatus employing the method is also disclosed.

Abstract: A method for allocating wireless resources based on sensitivity to interference provides a base station controller which, within an area of overlap of adjacent wireless cells, determines a set of neighboring cell pairs from a plurality of cells. The base station controller sorts the set of neighboring cell pairs according to the number of inner-pair interfered user equipment devices of each neighboring cell pair where inner-pair interfered user equipment devices are user equipment devices located in coverage areas of the neighboring cell pair and allocates resource blocks for each neighboring cell pair sequentially based on the sorted set. An apparatus employing the method is also disclosed.

Abstract: A method for allocating wireless resources based on sensitivity to interference provides a base station controller which, within an area of overlap of adjacent wireless cells, determines a set of neighboring cell pairs from a plurality of cells. The base station controller sorts the set of neighboring cell pairs according to the number of inner-pair interfered user equipment devices of each neighboring cell pair where inner-pair interfered user equipment devices are user equipment devices located in coverage areas of the neighboring cell pair and allocates resource blocks for each neighboring cell pair sequentially based on the sorted set. An apparatus employing the method is also disclosed.

Abstract: A method for allocating wireless resources for a number of user equipment in a wireless communication system is applied in an apparatus. The apparatus collects the traffic demands of all the user equipment and then selects a beam based on the traffic demands of all the user equipment in every time slot to make better utilization of resource blocks.