Abstract: A light-emitting device includes a substrate, first and second electrode pads, first to M-th light-emitting cells arranged in a line in a first direction between the first and second electrode pads, and first to N-th connection wires for electrically connecting the first to M-th light-emitting cells, wherein each of the first to M-th light-emitting cells comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the first electrode pad is connected to the second conductive semiconductor layer of the first light-emitting cell while the second electrode pad is connected to the first conductive semiconductor layer of the M-th light-emitting cell, and an n-th connection wire electrically connects the first conductive semiconductor layer of an n-th light-emitting cell to the second conductive semiconductor layer of an (n+1)-th light-emitting cell, which are adjacent to each other.

Abstract: A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

Abstract: A light-emitting device includes a substrate, first and second electrode pads, first to M-th light-emitting cells arranged in a line in a first direction between the first and second electrode pads, and first to N-th connection wires for electrically connecting the first to M-th light-emitting cells, wherein each of the first to M-th light-emitting cells comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the first electrode pad is connected to the second conductive semiconductor layer of the first light-emitting cell while the second electrode pad is connected to the first conductive semiconductor layer of the M-th light-emitting cell, and an n-th connection wire electrically connects the first conductive semiconductor layer of an n-th light-emitting cell to the second conductive semiconductor layer of an (n+1)-th light-emitting cell, which are adjacent to each other.

Abstract: Disclosed are a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and a lighting system.

Abstract: Disclosed are a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and a lighting system.

Abstract: Disclosed are a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and a lighting system.

Abstract: A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

Abstract: Disclosed is a light emitting device including a plurality of light emitting cells disposed on a substrate, at least one connection electrode for connecting the light emitting cells, and a first insulating layer disposed between adjacent light emitting cells, wherein each of the light emitting cells includes a light emitting structure including first and second conductive type semiconductor layers and an active layer, and a reflective layer disposed on the second conductive type semiconductor layer, wherein the connection electrode connects the first conductive type semiconductor layer of a first one of the adjacent light emitting cells to the reflective layer of a second one at the adjacent light emitting cells, and wherein a first width of the second conductive type semiconductor layer is the same as or greater than a second width of the reflective layer, and the first direction differs from a thickness direction of the light emitting structure.

Abstract: A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

Abstract: Disclosed are a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and a lighting system.

Abstract: Disclosed is a light emitting device including a plurality of light emitting cells disposed on a substrate, at least one connection electrode for connecting the light emitting cells, and a first insulating layer disposed between adjacent light emitting cells, wherein each of the light emitting cells includes a light emitting structure including first and second conductive type semiconductor layers and an active layer, and a reflective layer disposed on the second conductive type semiconductor layer, wherein the connection electrode connects the first conductive type semiconductor layer of a first one of the adjacent light emitting cells to the reflective layer of a second one at the adjacent light emitting cells, and wherein a first width of the second conductive type semiconductor layer is the same as or greater than a second width of the reflective layer, and the first direction differs from a thickness direction of the light emitting structure.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a crystalline substrate having a plurality of side surfaces, a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the substrate, and a first electrode on the first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer. An amorphous region is defined in a side surface of the substrate, and the amorphous regions of two sides adjacent to each other have different depths from a top surface of the substrate.

Abstract: Disclosed is a light emitting device a light transmissive substrate, a light emitting structure disposed on the light transmissive substrate, comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, a conductive layer disposed on the second conductive type semiconductor layer, a first electrode part disposed on the conductive layer, with at least predetermined region in contact with the first conductive type semiconductor layer, passing through the conductive layer, the second conductive type semiconductor layer and the active, and a first insulation layer disposed between the conductive layer and the first electrode part, between the second conductive type semiconductor layer and the first electrode part and between the active layer and the first electrode part.

Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive type semiconductor layer having a first top surface and a second top surface under the first top surface, an active layer on the first top surface of the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, a first electrode on the second top surface of the first conductive type semiconductor layer, an intermediate refractive layer on the second top surface of the first conductive type semiconductor layer, and a second electrode connected to the second conductive type semiconductor layer.

Abstract: A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

Abstract: Disclosed are a light emitting device, a light emitting device package, and an illumination system. The light emitting device includes a substrate; a light emitting structure layer including a first conductive type semiconductor layer formed on the substrate and having first and second upper surfaces, in which the second upper surface is closer to the substrate than the first upper surface, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a second electrode on the second conductive type semiconductor layer; and at least one first electrode extending at least from the second upper surface of the first conductive type semiconductor layer to a lower surface of the substrate by passing through the substrate.

Abstract: Provided is a light emitting device. The light emitting device includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an undoped semiconductor layer disposed on the second conductive type semiconductor layer and comprising a plurality of first holes, and a third conductive type semiconductor layer disposed on the undoped semiconductor layer and comprising a plurality of second holes.