Abstract: The present disclosure provides an electrolytic module unit based on a boron-doped diamond (BDD) electrode, including a water flow guide module and an electrolytic module. The electrolytic module is provided within the water flow guide module. The electrolytic module includes a BDD electrode including a main body portion and a plurality of branch portions disposed on two sides of the main body portion. The main body portion and the plurality of branch portions on two sides of the main body portion constitute a fishbone-like structure. The BDD electrode of the electrolytic module unit is of the fishbone-like structure.

Abstract: One or more embodiments relate to a superconducting qubit architecture that can be fabricated in one standard patterning step such as a lithographical step for example. Specifically, embodiments relates to a superconductor-constriction-superconductor Josephson junction (ScS JJ) qubit device for use in a quantum information processing environment. In one or more embodiments, the qubit device includes a substrate (a semiconductor substrate, an insulator substrate, and a dielectric substrate for example); a first superconducting pad formed on the substrate; and a second superconducting pad formed on the substrate, where the second superconducting pad coupled to and coplanar with the first superconducting pad.

Abstract: The present disclosure provides an electrolytic module unit based on a boron-doped diamond (BDD) electrode, including a water flow guide module and an electrolytic module. The electrolytic module is provided within the water flow guide module. The electrolytic module includes a BDD electrode including a main body portion and a plurality of branch portions disposed on two sides of the main body portion. The main body portion and the plurality of branch portions on two sides of the main body portion constitute a fishbone-like structure. The BDD electrode of the electrolytic module unit is of the fishbone-like structure.

Abstract: An apparatus includes a main body, circuit assembly, lens, and clamping assembly. The main body includes an aperture that receives a wafer configured to receive a sample under study. The main body is configured to support the circuit assembly, which includes illumination sources that emit light of different colors such that total internal reflection is generated in the wafer. The main body is configured to provide support for the lens, and the clamping assembly mechanically coupled to the main body such that the lens is selectively positionable with respect to a camera lens. A microscopy imaging apparatus includes an illumination source, wafer, and charge-coupled device. The illumination source is configured to emit white light such that total internal reflection is generated in the wafer.

Abstract: A qubit device for use in a quantum computing environment includes a semiconductor substrate, an insulating layer disposed on at least a portion of an upper surface of the substrate, and a transition metal silicide (TMSi) heterojunction disposed on at least a portion of an upper surface of the insulating layer. The TMSi heterojunction includes a link layer and at least first and second TMSi regions coupled with the link layer. The link layer may include a normal conductor, thereby forming a superconductor-normal conductor-superconductor (SNS) junction, or a geometric constriction, thereby forming a superconductor-geometric constriction-superconductor (ScS) junction. The link layer may form at least a portion of a channel including intrinsic or doped silicon.

Abstract: A qubit device for use in a quantum computing environment includes a semiconductor substrate, an insulating layer disposed on at least a portion of an upper surface of the substrate, and a transition metal silicide (TMSi) heterojunction disposed on at least a portion of an upper surface of the insulating layer. The TMSi heterojunction includes a link layer and at least first and second TMSi regions coupled with the link layer. The link layer may include a normal conductor, thereby forming a superconductor-normal conductor-superconductor (SNS) junction, or a geometric constriction, thereby forming a superconductor-geometric constriction-superconductor (ScS) junction. The link layer may form at least a portion of a channel including intrinsic or doped silicon.

Abstract: An array of out-of-plane, nanowires may be formed spontaneously when a material is deposited over a freshly sputter-deposited porous film under high vacuum. The nanowires may be formed without an apparent catalyst. It is the nanoporous structure of the sputter-deposited porous film that confines the size of permeated material domains during its vapor deposition, which may cause a certain surface-to-volume ratio and subsequent melting point reduction, rendering the domains of the material molten or partially molten at room temperature. The release of surface energy provides a force for the domains to diffuse and to eventually erupt from the porous thin film and may form nanowires. Due to the universality of higher surface energy for nanoparticles, the present nanowires may be applicable for scalable growth of one-dimensional nanostructures of various other materials with moderate melting points.

Abstract: A chemically passivated photoelectrode, having a conductive substrate, a layer of conductive oxide, preferably zinc oxide (ZnO), over the conductive substrate, and an ultrathin layer of a chemically inert semiconductor material coating the conductive oxide layer, is disclosed. The ultrathin layer of chemically inert semiconductor material, which may be less than 5 nm thick, increases the efficiency of water splitting through passivation of surface charge traps and chemical stability in harsh environments, as opposed to being photoactive. A method of manufacture and a solar cell having the photoelectrode are also disclosed.