Patents by Inventor Ming-Zhi Dai

Ming-Zhi Dai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8877535
    Abstract: The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
    Type: Grant
    Filed: April 1, 2014
    Date of Patent: November 4, 2014
    Assignee: National Chiao Tung University
    Inventors: Hsiao-Wen Zan, Hsin-Fei Meng, Ming-Zhi Dai, Yu-Chiang Chao
  • Publication number: 20140213006
    Abstract: The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
    Type: Application
    Filed: April 1, 2014
    Publication date: July 31, 2014
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Hsiao-Wen Zan, Hsin-Fei Meng, Ming-Zhi Dai, Yu-Chiang Chao
  • Patent number: 8723503
    Abstract: The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
    Type: Grant
    Filed: January 19, 2011
    Date of Patent: May 13, 2014
    Assignee: National Chiao Tung University
    Inventors: Hsiao-Wen Zan, Hsin-Fei Meng, Ming-Zhi Dai, Yu-Chiang Chao
  • Publication number: 20120223370
    Abstract: A biochemical sensor and a method of manufacturing the same are disclosed. The biochemical sensor includes a substrate, a gate arranged on one side of the substrate, a gate insulating layer arranged on one side of the gate opposite to the substrate, an active layer arranged on one side of the gate insulating layer opposite to the gate, a source and a drain arranged on one side of the active layer opposite to the gate insulating layer, and a biochemical sensing layer arranged on one side of the active layer opposite to the gate insulating layer and between the source and the drain.
    Type: Application
    Filed: May 24, 2011
    Publication date: September 6, 2012
    Inventors: Hsiao-Wen ZAN, Chuang-Chuang Tsai, Hsin-Fei Meng, Chun-Cheng Yeh, Ming-Zhi Dai, Chang-Hung Li
  • Patent number: 8217670
    Abstract: The invention provides a label-free sensor that includes a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and spaced away from the first electrode, and a semiconductor layer formed on the substrate and being in contact with the first electrode and the second electrode. The semiconductor layer has a plurality of probe groups bonded to the semiconductor layer by functionalization, for sensing a coupling-specific substance having bonding specificity with the probe groups. The semiconductor layer is bonded with the probe groups, and the detection of detected object is performed in an instant, quick, rapid, and sensitive manner by measuring variation in electric current, avoiding the use of fluorescent reading equipment for reading fluorescent signals.
    Type: Grant
    Filed: July 10, 2009
    Date of Patent: July 10, 2012
    Assignee: National Chiao Tung University
    Inventors: Hsin-Fei Meng, Sheng-Fu Hong, Yu-Chiang Chao, Chien-Cheng Liu, Wen-Hsing Liu, Cheng-Chung Chang, Jan-Hao Li, Ming-Zhi Dai
  • Publication number: 20120086431
    Abstract: The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
    Type: Application
    Filed: January 19, 2011
    Publication date: April 12, 2012
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Hsiao-Wen Zan, Hsin-Fei Meng, Ming-Zhi Dai, Yu-Chiang Chao
  • Publication number: 20100237885
    Abstract: A label-free sensor is disclosed. The label-free sensor comprises a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and spaced away from the first electrode, and a semiconductor layer formed on the substrate and is in contact with the first electrode and the second electrode, wherein the semiconductor layer has a plurality of probe groups, which are bonded to the semiconductor layer by functionalization, for sensing a coupling-specific substance, which has bonding specificity with the probe groups. The semiconductor layer of the label-free sensor of the present invention is bonded with probe groups, and the detection of detected object is performed in instant, quick, rapid, and sensitive manner by measuring variation in electric current, thereby avoiding the use of the fluorescent reading equipment for reading fluorescent signals.
    Type: Application
    Filed: July 10, 2009
    Publication date: September 23, 2010
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Hsin- Fei Meng, Sheng-Fu Hong, Yu-Chiang Chao, Chien-Cheng Liu, Wen-Hsing Liu, Cheng-Chung Chang, Jan-Hao Li, Ming-Zhi Dai