Patents by Inventor Minh B. Nguyen
Minh B. Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 12230659Abstract: An interposer for a curved detector. In some embodiments a system includes a curved array photodetector; a first readout integrated circuit, the first readout integrated circuit being substantially flat; and an interposer, between the photodetector and the first readout integrated circuit. The photodetector and the first readout integrated circuit may each have a plurality of electrical contacts. The interposer may include a first conductor connecting a first contact, of the plurality of electrical contacts of the photodetector, and a second contact, of the plurality of electrical contacts of the first readout integrated circuit.Type: GrantFiled: May 19, 2021Date of Patent: February 18, 2025Assignee: HRL LABORATORIES, LLPInventors: Tobias A. Schaedler, Florian G. Herrault, Kevin Geary, Mark O'Masta, Kayleigh A. Porter, Minh B. Nguyen
-
Patent number: 11749705Abstract: A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.Type: GrantFiled: January 24, 2022Date of Patent: September 5, 2023Assignee: HRL LABORATORIES, LLCInventors: Minh B. Nguyen, Brett Z. Nosho
-
Patent number: 11604095Abstract: A hyperspectral imager (HSI) includes a first thin film filter, the first thin film filter including a first quarter wave mirror, a second quarter wave mirror, and a low-refractive-index wedge between the first quarter wave mirror and the second quarter wave mirror. The low-refractive-index wedge has a height dimension such that a distance between the first quarter wave mirror and the second quarter wave mirror increases linearly along a length of the low-refractive-index wedge.Type: GrantFiled: May 13, 2020Date of Patent: March 14, 2023Assignee: HRL LABORATORIES, LLCInventors: Shuoqin Wang, Joseph Nedy, Brett Z. Nosho, Minh B. Nguyen
-
Publication number: 20220149107Abstract: A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.Type: ApplicationFiled: January 24, 2022Publication date: May 12, 2022Applicant: HRL Laboratories, LLCInventors: Minh B. NGUYEN, Brett Z. NOSHO
-
Patent number: 11302739Abstract: An infrared detector. The detector includes: a superlattice structure including: at least three first layers; and at least three second layers, alternating with the first layers. Each of the first layers includes, as a major component, InAsxP1-x, wherein x is between 0.0% and 99.0%, and each of the second layers includes, as a major component, InAsySb1-y, wherein y is between 0% and 60%.Type: GrantFiled: August 2, 2016Date of Patent: April 12, 2022Assignee: HRL Laboratories, LLCInventors: Minh B. Nguyen, Rajesh D. Rajavel, David H. Chow
-
Patent number: 11282887Abstract: A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.Type: GrantFiled: January 30, 2020Date of Patent: March 22, 2022Assignee: HRL Laboratories, LLCInventors: Minh B. Nguyen, Brett Z. Nosho
-
Patent number: 11264526Abstract: A phototransistor includes an emitter, a collector, and a base between the emitter and the collector. The base has a thickness greater than 500 nanometers and the base absorbs photons passing through the collector to the base.Type: GrantFiled: January 24, 2020Date of Patent: March 1, 2022Assignee: HRL Laboratories, LLCInventors: Minh B. Nguyen, Diego Carrasco, Rajesh D. Rajavel
-
Publication number: 20200328247Abstract: A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.Type: ApplicationFiled: January 30, 2020Publication date: October 15, 2020Applicant: HRL Laboratories, LLCInventors: Minh B. NGUYEN, Brett Z. NOSHO
-
Patent number: 10720456Abstract: Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300° C. to about 400° C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.Type: GrantFiled: July 23, 2019Date of Patent: July 21, 2020Assignee: HRL Laboratories, LLCInventors: Terence J. DeLyon, Rajesh D. Rajavel, Sevag Terterian, Minh B. Nguyen, Hasan Sharifi
-
Patent number: 10424608Abstract: Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300° C. to about 400° C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.Type: GrantFiled: January 31, 2018Date of Patent: September 24, 2019Assignee: HRL Laboratories, LLCInventors: Terence J. DeLyon, Rajesh D. Rajavel, Sevag Terterian, Minh B. Nguyen, Hasan Sharifi