Patents by Inventor Minh-Ren Lin

Minh-Ren Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gate array with multiple dielectric properties and method for forming same
    Patent number: 6563183
    Abstract: The invention provides an integrated circuit fabricated on a semiconductor substrate. The integrated circuit comprises a first field effect transistor and a second field effect transistor. The first field effect transistor comprises a first polysilicon gate positioned above a first channel region of the substrate and isolated from the first channel region by a first dielectric layer extending the entire length of the first polysilicon gate. The first dielectric layer comprises a first dielectric material with a first dielectric constant. The second field effect transistor comprises a second polysilicon gate positioned above a second channel region on the substrate and isolated from the second channel region by a second dielectric layer extending the entire length of the second polysilicon gate. The second dielectric layer comprises a second dielectric material with a second dielectric constant.
    Type: Grant
    Filed: February 28, 2002
    Date of Patent: May 13, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: William G. En, Arvind Halliyal, Minh-Ren Lin, Minh Van Ngo, Cyrus E. Tabery, Chih-Yuh Yang