Abstract: A display panel including a wavelength conversion structure that includes a base structure including partition walls that define a first space and a second space, a first quantum dot composite disposed in the first space, and a second quantum dot composite disposed in the second space. The height of the partition wall is greater than or equal to about 5 micrometers and less than or equal to about 50 micrometers, and the first quantum dot composite provides a first top surface and the second quantum dot composite provides a second top surface. A production method for making the wavelength conversion structure uses a first ink composition that includes first quantum dots and a first matrix, and a second ink composition that includes second quantum dots and a second matrix.

Abstract: An electronic device includes a first substrate, a plurality of light emitting elements each having a horizontal length and a vertical length which are less than or equal to about 10 micrometers (?m), each of the plurality of light emitting elements being disposed on the first substrate, a quantum dot color filter layer disposed on the plurality of light emitting elements, and a first overcoat layer between a plurality of light emitting elements and the quantum dot color filter layer. The quantum dot color filter layer includes a plurality of quantum dot color filters partitioned by a plurality of first partition walls so as to be overlapped with the plurality of light emitting elements, respectively.

Abstract: A display panel including a wavelength conversion structure that includes a base structure including partition walls that define a first space and a second space, a first quantum dot composite disposed in the first space, and a second quantum dot composite disposed in the second space. The height of the partition wall is greater than or equal to about 5 micrometers and less than or equal to about 50 micrometers, and the first quantum dot composite provides a first top surface and the second quantum dot composite provides a second top surface. A production method for making the wavelength conversion structure uses a first ink composition that includes first quantum dots and a first matrix, and a second ink composition that includes second quantum dots and a second matrix.

Abstract: The present disclosure provides a display panel including: a substrate; a plurality of light emitting elements including semiconductor light emitting chips and disposed on the substrate; a plurality of color conversion layers overlapped with the plurality of light emitting elements and disposed thereon, respectively; and a plurality of absorption-type color filter layers directly disposed and having a surface shape of the plurality of color conversion layers, respectively, where a pitch between adjacent light emitting elements of the plurality of light emitting elements is less than or equal to about 100 micrometers, and at least one of the plurality of color conversion layers includes quantum dots.

Abstract: Provided are a display panel, and an electronic device including display panel. The display panel includes: a substrate; a plurality of light emitting elements disposed on the substrate, each of the plurality of light emitting elements including a semiconductor light emitting chip; a plurality of micro lenses disposed on the light emitting elements, respectively, each of the micro lenses surrounding each of the light emitting elements; and a plurality of color conversion layers disposed on or under the plurality of micro lenses, respectively, each of the color conversion layers having a shape corresponding to each of the plurality of micro lenses.

Abstract: A display panel, a method of manufacturing the same, and an electronic device including the display panel. The display panel includes a light emitting device array including a plurality of light emitting devices, a color conversion layer disposed on the light emitting device array and converting the emission spectrum of light emitted from the light emitting device array, and an encapsulation film on the color conversion layer, wherein the color conversion layer includes a quantum dot-polymer pattern including a quantum dot-polymer composite, an average roughness (Ra) of an upper surface of the quantum dot-polymer pattern is less than or equal to about 3% of a thickness of the encapsulation film.

Abstract: A quantum dot, a quantum dot composite including the quantum dot, a composition for preparing the quantum dot composite, a display panel including the quantum dot composite, and an electronic apparatus including the display panel. The quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, the semiconductor nanocrystal core having an emission peak wavelength from about 600 nm to about 650 nm, or an emission peak wavelength from about 500 nm to about 550 nm, and an area of a peak from about 400° C. to about 500° C. is 0.17 times to 0.5 times relative to an area of a peak from about 200° C. to about 300° C. in a thermogravimetric analysis (TGA) graph as determined with a differential scanning calorimeter (DSC).

Abstract: A quantum dot composite includes a matrix and a plurality of quantum dots dispersed in the matrix, and a color conversion panel and a display panel including the same. The plurality of quantum dots include a metal including indium (In) and zinc and a non-metal including phosphorous (P), selenium, and sulfur, wherein the plurality of quantum dots includes a mole ratio of sulfur to indium of greater than or equal to about 3:1 and less than or equal to about 6:1, and a mole ratio of sulfur to selenium of greater than or equal about 0.69:1 and less than or equal to about 0.89, and a mole ratio of zinc to indium of greater than or equal to about 10:1 and less than or equal to about 12.4:1, and wherein the plurality of the quantum dots are configured to emit red light.

Abstract: A display panel including a wavelength conversion structure that includes a base structure including partition walls that define a first space and a second space, a first quantum dot composite disposed in the first space, and a second quantum dot composite disposed in the second space. The height of the partition wall is greater than or equal to about 5 micrometers and less than or equal to about 50 micrometers, and the first quantum dot composite provides a first top surface and the second quantum dot composite provides a second top surface. A production method for making the wavelength conversion structure uses a first ink composition that includes first quantum dots and a first matrix, and a second ink composition that includes second quantum dots and a second matrix.

Abstract: An electronic device includes a light emitting element having a width of less than or equal to about 20 micrometers (?m), a quantum dot color filter overlapping the light emitting element, and a photo-detecting unit which detects a first light emitted from the quantum dot color filter.

Abstract: An electronic device includes a first substrate, a plurality of light emitting elements each having a horizontal length and a vertical length which are less than or equal to about 10 micrometers (?m), each of the plurality of light emitting elements being disposed on the first substrate, a quantum dot color filter layer disposed on the plurality of light emitting elements, and a first overcoat layer between a plurality of light emitting elements and the quantum dot color filter layer. The quantum dot color filter layer includes a plurality of quantum dot color filters partitioned by a plurality of first partition walls so as to be overlapped with the plurality of light emitting elements, respectively.

Abstract: An electrochromic material including a nanostructure including a nickel oxide wire which is three-dimensionally interconnected wherein a thickness of the nickel oxide wire is less than about 10 nanometers, and an electrochromic device, an optical device, and an electronic device including the same.

Abstract: A light source unit includes a light guide plate which includes a front surface and a rear surface which are opposite to each other and a side between and connecting the front surface and the rear surface, a light conversion device on the side of the light guide plate; and a light source which generates and supplies light to the light conversion device. The light conversion device includes, a sealed tube, a light conversion member within the sealed tube and a space other than an area in the tube which is occupied by the light conversion member, defined in the tube.

Abstract: A heating member for a fusing apparatus includes a resistive heating layer including a base polymer and an electroconductive filler dispersed in the base polymer, where the resistive heating layer generates heat by receiving electric energy, and where a storage modulus of the resistive heating layer is about 1.0 megapascal or greater.

Abstract: A resistance heating composition including a silicon emulsion particle, a carbon nanotube, and an aqueous medium.

Abstract: A resistance heating element includes a positive temperature coefficient resistance heating layer having a positive temperature coefficient, and a negative temperature coefficient resistance heating layer, which is connected to the positive temperature coefficient resistance heating layer and has a negative temperature coefficient.

Abstract: A heating member includes: a resistive heating layer which generates heat when supplied with electrical energy; a release layer as an outermost layer of the heating member and including a polymer; an intermediate layer disposed between the resistive heating layer and the release layer. The resistive heating layer includes a base polymer, and an electroconductive filler dispersed in the base polymer. The intermediate layer includes a polymer material being a same type as the base polymer of the resistive heating layer or the polymer of the release layer.

Abstract: A method of forming a thin film resistive heating layer, the method including: forming a polymer layer by extruding a polymer paste, in which an electrically conductive filler is dispersed, by using an extrusion molding operation, on an outer circumferential surface of a cylindrical member; and forming a thin film resistive heating layer by making an outer diameter of the polymer layer uniform by using a ring blading operation.

Abstract: A heating member includes: a resistive heating layer including: a medium-passing area, and non-medium-passing areas respectively on opposing sides of the medium-passing area at opposing side portions of the resistive heating layer; a core which supports the resistive heating layer; a thermally conductive layer between the resistive heating layer and the core, and disposed in a non-medium passing area at a side portion of the resistive heating layer; and an electrode which is between the resistive heating layer and the core, contacts the side portion of the resistive heating layer and supplies current to the resistive heating layer. A ratio of a contact area between the thermally conductive layer and the resistive heating layer to an area of the non-medium-passing area in which the thermally conductive layer is disposed, ranges from about 5% to about 25%.

Abstract: A light source unit includes: a light guiding plate having a front surface and a rear surface facing each other, and a side surface between the front surface and the rear surface; a light guiding bar disposed on the side surface of the light guiding plate; a quantum dot package disposed on a surface of the light guiding bar; and a dot light source which provides light to the quantum dot package.