Abstract: In a method and a system for forming a copper thin film in which a raw material gas is introduced into a substrate processing chamber storing a substrate and being under a reduced pressure to form a copper thin film on the substrate, an addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued. Alternatively, an addition gas is introduced into the substrate processing chamber before the start of the deposition process, and the addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued.

Abstract: A method for the formation of copper wiring films includes the steps of forming a first copper film by a CVD method on a diffusion barrier film, which diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500° C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode.

Abstract: A method for the formation of copper wiring films includes the steps of forming a first copper film by means of a CVD method on an insulating diffusion barrier film, which insulating diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500° C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode.

Abstract: An object of the present invention is to provide a method and a system for forming a copper thin film by a chemical vapor deposition method which can improve the adhesion performance of a copper thin film to a substrate and which can form the copper thin film having a high film quality.

Abstract: A CVD apparatus for depositing a copper interconnect film on a substrate is equipped with a first CVD module 15 which deposits a copper film as a foundation using a Cu(hfac)(tmvs)-based precursor material having a small film deposition rate, and a second CVD module 16 which performs film deposition to increase the thickness of the copper film using a Cu(hfac)(atms)-based precursor material having a large film deposition rate. The film deposition rate of the Cu(hfac)(tmvs)-based precursor material is about 100 nm per minute and the film deposition rate of the Cu(hfac)(atms)-based precursor material is about 400 nm per minute. This realizes a practical CVD apparatus for mass production which achieves both a high film deposition efficiency and high film quality.