Abstract: A refrigerator for drinks is provided. The refrigerator has an open hole that is open upward to allow a drink container to be inserted in an erect state in a cabinet through the open hole. An insertion guide connected to the open hole is disposed in the cabinet and the width of the insertion guide changes in a height direction. Accordingly, a drink container is guided by the insertion guide when being inserted into or taken out of the refrigerator for drinks.

Abstract: A refrigerator for drinks may include a cabinet and a cooling guide transmitting coldness to a drink container stored in an erect state in the cabinet. Several coolers may be disposed for cooling guides and may cool the cooling guides, respectively, and dispenser nozzles may be disposed to be exposed outside the cabinet, whereby drinks may be dispensed. A surface of a cooling block facing a thermoelectric element of the cooler and a surface of the cooling block facing the cooling guide may have different areas.

Abstract: Disclosed is a method of producing a reusable positive electrode active material, including the steps of: dipping a stack cell including a stacked and integrated positive electrode plate, separator and negative electrode plate, in a polar solvent to separate the positive electrode plate; heat treating the separated positive electrode plate to perform thermal decomposition of a binder and a conductive material in a positive electrode material layer of the positive electrode plate, separating a current collector from the positive electrode plate and recovering an active material from the positive electrode active material layer; washing the recovered active material with an aqueous lithium compound solution showing alkalinity in an aqueous solution state; and adding a lithium precursor to the washed active material and carrying out annealing to obtain a reusable positive electrode active material.

Abstract: Blankmask for EUV lithography has a reflective film formed on a substrate and an absorbing film formed on the reflective film. The absorbing film contains tantalum (Ta) and antimony (Sb). The absorbing film has a composition ratio of Ta:Sb=2:8˜6:4 at %. The absorbing film with a high extinction coefficient (k) allows for the thin film deposition of the absorbing film, reducing the Shadowing Effect and 3D Effect.

Abstract: Disclosed is a blankmask for EUV lithography. The blankmask has a reflective film formed on a substrate, a capping film containing ruthenium (Ru), an etch stop film containing tantalum (Ta) and antimony (Sb), and a phase shift film containing ruthenium (Ru). The etch stop film has a composition ratio of tantalum (Ta) and antimony (Sb) ranging from 3:7 to 7:3. The stacked structure of the phase shift film containing ruthenium (Ru) and the etch stop film containing tantalum (Ta) and antimony (Sb) results in achieving a high extinction coefficient (k) and a low refractive index (n).

Abstract: A quad-polymer composition includes monomers of (a) acrylonitrile, (a) vinylimidazole, (c) methyl acrylate and (d) either acrylic acid or itaconic acid. Such quad-polymer compositions may be used to form fibers (such as by melt spinning) that may then be annealed, stabilized, and/or carbonized to produce carbon fibers. The quad-polymer composition may be used for supercapacitors, lithium battery electrodes once carbonized, and as synthesized, it may be used for wound healing fibers, fabrics, coatings, and films, and anti-bacterial/anti-microbial fibers, fabrics, coatings and films. The carbon fibers formed from the quad-polymer composition may be used for the fiber composites for automobile, aerospace structures, marine structures, military equipment/parts, sporting goods, robotics, furniture, and electronic parts.

Abstract: A refrigerator includes a cabinet, a cooling guide transmitting coldness to a drink container stored in an erect state in the cabinet, a cooler located in the cabinet to cool the cooling guide, and a dispenser nozzle disposed to be at least partially exposed outside the cabinet. The cooler includes a thermoelectric element and a cooling block having a surface facing the thermoelectric element of the cooler and a surface of the cooling block facing the cooling guide, where the surfaces have different areas.

Abstract: The present disclosure relates to a composition including a Centipeda minima extract and the fraction thereof as an active ingredient. Since the composition of the present disclosure promotes the production and growth of hair, the composition not only presents excellent effects in the prevention, amelioration, and treatment of hair-loss, but may also be used for promoting hair-growth.

Abstract: The present disclosure relates to a composition including a Centipeda minima extract and the fraction thereof as an active ingredient. Since the composition of the present disclosure promotes the production and growth of hair, the composition not only presents excellent effects in the prevention, amelioration, and treatment of hair-loss, but may also be used for promoting hair-growth.

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Abstract: A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Abstract: A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.

Abstract: A method of operating a resistive non-volatile memory can be provided by applying a forming voltage across first and second electrodes of a selected memory cell in the variable resistance non-volatile memory device during an operation to the selected memory cell. The forming voltage can be a voltage level that is limited to less than a breakdown voltage of an insulation film included in selected memory cell between a variable resistance film and one of first electrode. Related devices and materials are also disclosed.

Abstract: According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.

Abstract: A resistive memory device includes a stack of two layers of variable resistance material and top, middle, and bottom electrodes, the stack symmetrical in composition about the middle electrode.

Abstract: A semiconductor device includes a substrate extending in a horizontal direction. An active pillar is present on the substrate extending in a vertical direction relative to the horizontal direction of extension of the substrate. A variable resistive pattern is present on the substrate extending in the vertical direction along the active pillar, an electrical resistance of the variable resistive pattern being variable in response to an oxidation or reduction thereof. A gate is present at a sidewall of the active pillar.

Abstract: Resistive memory devices are provided having a gate stack including insulating layers and gates stacked on a substrate in a vertical direction, a channel penetrating the gate stack in the vertical direction to be electrically connected to the substrate, a gate insulating layer provided between the channel and the gates, and a variable resistance layer disposed along an extending direction of the channel. The gate stack may include an alcove formed by recessing the gate in a horizontal direction. The variable resistance layer may extend toward the alcove in the horizontal direction and be overlapped with at least one of the gates in the horizontal direction. Related methods are also provided.