Abstract: A tunneling magnetoresistance device with high magnetoimpedance effect, a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is located between the first ferromagnetic layer and the second ferromagnetic layer. Wherein an alternating current is applied to the tunneling magnetoresistance device, the tunneling magnetoresistance device has at least 100% variation of real components between an applied first alternating frequency and an applied second alternating frequency, at least 25% variation of imaginary components below the first alternating frequency, and at least 8.5% variation of magneto capacitance (MC) ratio which are generated along the magnetization direction.

Abstract: A tunneling magnetoresistance device with high magnetoimpedance effect, comprising: a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is located between the first ferromagnetic layer and the second ferromagnetic layer. Wherein an alternating current is applied to the tunneling magnetoresistance device, the tunneling magnetoresistance device has at least 100% variation of real components between an applied first alternating frequency and an applied second alternating frequency, at least 25% variation of imaginary components below the first alternating frequency, and at least 8.5% variation of magneto capacitance (MC) ratio which are generated along the magnetization direction.

Abstract: This specification disclosed a multilayer film structure of a tunneling magneto-resistor and the manufacturing of the same, the structure being able to increase the tunneling magneto-resistance (TMR) ratio and to decrease the difficulty in manufacturing. The multilayer film structure disclosed herein forms, in a three-layer film structure composed of two layers of ferromagnetic films and an insulating layer provided in between, a layer of moderately thick ferromagnetic metal insertion between one of the ferromagnetic film and the insulating layer. Through the insertion the tunneling magneto-resistance ratio can be greatly increased and the thickness of the insulating layer is increased to the range where the manufacturing difficulty is lowered.