Abstract: Polypropylene resin pre-expanded particles having an expandability of 1.0 to 1.

Abstract: Polypropylene resin pre-expanded particles having a weight of 0.3 to 1.8 mg per particle and a mean cell diameter of at most 250 &mgr;m and exhibiting two fusion peaks on a DSC curve thereof one of which appearing on a higher temperature side has a specific heat of fusion QH, which can be molded in a mold in a shortened molding time to give cellular molded articles having a low density of 25 g/liter or less after being provided with an inorganic gas pressure of at least 1.5 atms when the heat of fusion QH is 2.8 to 6.0 cal/g, or after being provided with an inorganic gas pressure of 1.18 to 1.5 atms when the heat of fusion QH is from 0.3 to less than 2.8 cal/g.

Abstract: A method of washing pre-expanded particles having a substantially water insoluble inorganic compound attached thereto by contacting the pre-expanded particles with an aqueous washing solution of a water soluble compound. The water soluble compound has a solubility with water of at least 1 g/100 g of water and has 1-500 surface bonding functional groups and 1-500 hydrophilic functional groups. At least one of the surface bonding functional groups of the water soluble compound attaches to the water insoluble inorganic compound.

Abstract: Resin particles made from a resin mixture of 30 to 70 wt % of a linear low-density polyethylene I having a resin density of 0.930 to 0.935 g/cm.sup.3 and an MI of 1 g/10 minutes or higher and 70 to 30 wt % of a linear low-density polyethylene II having a resin density of 0.915 to 0.925 g/cm.sup.3 and an MI of 2 g/10 minutes or higher are impregnated under pressurization with a volatile expansion agent, and released into a low-pressure atmosphere to yield non-crosslinked linear low density polyethylene preexpanded particles, which, when subjected to expansion molding inside a mold, exhibit good moldability, and yield molded articles that have an attractive external appearance and exhibit outstanding cushioning properties.

Abstract: In a light sensitive semiconductor unit having a plurality of light sensitive semiconductor cells connected in series, the light receiving area or size of the light sensitive semiconductor cells is increased as the distance from the center of the unit increases so that every light sensitive semiconductor cell can generate generally equal short circuit current even if the light intensity is decreased as the distance between the light sensitive semiconductor cell and light source increases, whereby a high operating voltage can be obtained.

Abstract: A semiconductor light beam position sensor element comprises a semiconductor layer of successively formed p-, i- and n-type semiconductor layers and an electrically conductive layer on either side of the semiconductive layer. At least one of the conductive layers is made of a transparent material, and at least the other conductive layer and the semiconductor layer are provided with a plurality of common apertures extending in the thickness direction. At least one of the conductor layers is provided with one or two pairs of electrodes of opposite polarity and positioned in its marginal regions. The sensor element is light transparent. A feedback circuit is provided to insure that the incident light is constant.

Abstract: A photosensor comprises a first electrode layer, a light-transmitting second electrode layer, and a laminate structure disposed between the two electrode layers and comprising a first photoconductive layer, a blocking layer and a second photoconductive layer (4) for charge injection as a result of modification of the electrical properties of the first photoconductive layer and of the blocking layer, the main component of the first photoconductive layer being silicon, the blocking layer being made of a substance having a broader band gap as compared with hydrogenated amorphous silicon and composed mainly of silicon and carbon or mainly of silicon and nitrogen or mainly of silicon and oxygen, and the main component of the second photoconductive layer being silicon and the silicon of the second photoconductive layer being doped with an element(s) of the group III or V of the period table.

Abstract: In an X ray detecting device comprising XL converting unit for converting the X rays into visible light corresponding to the intensity of the X rays and a LE converting unit for converting the visible light into an electrical signal corresponding to the intensity of the visible light, the base layer of the LE converting unit is formed of a material such that the base layer does not substantially absorb the X rays so that the image of the LE converting unit does not appear on the picture of the object.

Abstract: In the semiconductor image sensor according to the invention in which the photoconductivity of that region of the active layer producing carriers upon exposure to light which is on the light-transmitting electrode side is lower than that of the remaining region, crosstalk can be inhibited without mechanically dividing the semiconductor layer and without causing any significant decrease in sensor sensitivity.

Abstract: A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layers; characterized in that (1) at least one interlayer made of semiconductor or insulator having higher electrical resistivity than a semiconductor which adjoins the interlayer is/are interposed between semiconductor layers or between a semiconductor and an electrode, (2) an amount of dopant in a p-type or n-type layer is least at a junction interface of p/i or n/i and increases gradually toward a junction interface of p/electrode or n/electrode, or (3) a p-type semiconductor layer being the same conductive type as the p-type semiconductor and having higher impurity density and/or an n-type semiconductor layer being the same conductive type as the n-type semiconductor layer and having higher impurity density is/are interposed between the p-type semiconductor layer and the electrode at the side of the p-type semiconductor layer and/or between the n-type semiconductor layer and the electrode at the side of the n-type

Abstract: A transparent semiconductor light beam position sensor element comprises a semiconductor layer consisting of p-, i- and n-type semiconductor layers successively bonded in junction and an electrically conductive layer disposed on either side of the semiconductive layer, at least one of the conductive layers being material transparent material, at least the other conductive layer and the semiconductor layer being provided with a multiplicity of common apertures running in the thickness direction and at least one conductive layer being provided with one pair or two pairs of electrodes of opposite polarities as disposed in its marginal regions.

Abstract: A color sensor of the present invention is a semiconductor element comprising a semiconductor wherein a plurality of pn or pin junctions are laminated, and conductive layers which are laminated on both surfaces of the semiconductor, characterized in that the semiconductor element is arranged in a way that the quantity of production of photocarriers is increased in order from the light incident side for the whole wave length band to be measured, and that value of current is detected by changing voltage between both conductivity layers. According to the color sensor of the present invention, the construction can be simplified, it is easily integrated and large-scaled, manufacturing process can be simplified, and the yield of color sensors increases, so that there can be realized a color sensor with low cost.

Abstract: The present invention relates to a strain sensor, particularly a strain sensor which detects a mechanical strain using the electric resistance change of a non-single crystalline semiconductor which is proportional to mechanical strain. The strain sensor in the present invention consists of a non-single crystalline semiconductor containing Si wherein the activation energy determined from the temperature dependency of the dark conductivity is under 15 meV. The strain sensor particularly suits an application to a mechanical strain measurement under a comparatively strong magnetic field.

Abstract: A photovoltaic device of amorphous or microcrystalline semiconductor having multijunction wherein one or more layer including high concentration impurities is interposed between p-type conductive layer and n-type conductive layer. A tunnel junction is formed by the interposed layer to elevate the photo-electric conversion rate.

Abstract: A heat-resistant multijunction semiconductor device comprising a p-layer, a n-layer and a diffusion-blocking layer, the diffusion-blocking layer being provided between the p-layer and the n-layer. The semiconductor device can reduce the deterioration in quality which is caused by the diffusion of dopant atoms in the p-layer and n-layer, respectively, into the other layer.

Abstract: A photovoltaic element comprises a p-type layer comprising a p-type transition metal oxide, an active layer comprising an amorphous silicon, a n-type layer comprising an amorphous silicon containing a n-type impurity, and an electrode.

Abstract: A multilayer photoconductive material wherein at least two kinds of alloys selected from the group consisting of amorphous silicon or germanium alloys comprising silicon and/or germanium and at least one element selected from the group consisting of carbon, fluorine and hydrogen are alternately laminated, the kinds of alloys of the adjacent layers being different from each other and the total number of the layers being at least 6, which has exhibits a high response speed and can be easily controlled in sensitivity not only to long wavelength light but also to short wavelength light.

Abstract: A heat-resistant thin film photoelectric converter, comprising a semiconductor layer, a front transparent electrode, a rear metal electrode, and a diffusion-blocking layer, said diffusion-blocking layer being provided between the semiconductor layer and the rear metal electrode and being a layer of metal silicide having a thickness of 5 .ANG. to 200 .ANG..The converter of the present invention can avoid the reduction in the efficiency due to the diffusion of metal or metallic compound from the electrode into the semiconductor.

Abstract: A temperature detector having a semiconductor layer which is a p-type or n-type semiconductor doped by addition of an impurity. The semi- semiconductor is completely amorphous, or substantially amorphous with the inclusion of microcrystals. The temperature detector has good sensitivity at a temperature of not more than 100 K, and has good linearity of the change of resistivity to the change of temperature over a wide range of temperature.

Abstract: A heat-resistant thin film photoelectric converter comprising a semiconductor layer, front and back electrodes, and a diffusion-blocking layer, the diffusion-blocking layer being provided between the semiconductor and at least one said electrode, and its preparation. The diffusion-blocking layer is of a metal selected from the Group IVA metals and Group VA metals of the Periodic Table. The converter avoids the reduction in efficiency due to the diffusion of metal or metallic compound from the electrode into the semiconductor.