Abstract: There is provided a film forming apparatus which is capable of forming a film on both surfaces of a substrate by sputtering continuously with high efficiency by restraining a rise in temperature of the substrate to a predetermined value or higher. In a film forming chamber 2 the pressure of which is controlled, while a rotating drum 7 is rotated by the driving of a drive motor 8, a film is formed on the top surface of a substrate 12 on a substrate tray 13 held on a substrate holder 10 by cathodes 17a and 17b for outer surface to which a d.c. voltage or an a.c. voltage or a high-frequency voltage is applied, and also a film is formed on the back surface of the substrate 12 on the substrate tray 13 held on the substrate holder 10 by cathodes 14a and 14b for inner surface to which a d.c. voltage or an a.c.

Abstract: There is provided a film forming apparatus which is capable of forming a film on both surfaces of a substrate by sputtering continuously with high efficiency by restraining a rise in temperature of the substrate to a predetermined value or higher. In a film forming chamber 2 the pressure of which is controlled, while a rotating drum 7 is rotated by the driving of a drive motor 8, a film is formed on the top surface of a substrate 12 on a substrate tray 13 held on a substrate holder 10 by cathodes 17a and 17b for outer surface to which a d.c. voltage or an a.c. voltage or a high-frequency voltage is applied, and also a film is formed on the back surface of the substrate 12 on the substrate tray 13 held on the substrate holder 10 by cathodes 14a and 14b for inner surface to which a d.c. voltage or an a.c.