Patents by Inventor Minoru Endou

Minoru Endou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for manufacturing the same
    Patent number: 8383516
    Abstract: A semiconductor device which has a semiconductor substrate, an isolation insulating film formed in the semiconductor substrate, a conductive pattern formed over the semiconductor substrate and the isolation insulating film, so that a side face of the conductive pattern is formed over the isolation insulating film, and an insulating film is formed over the isolation insulating film, the conductive pattern and the side face of the conductive pattern, and the side face of the conductive pattern comprises a notch.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: February 26, 2013
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Makoto Takahashi, Minoru Endou
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20110312154
    Abstract: A semiconductor device which has a semiconductor substrate, an isolation insulating film formed in the semiconductor substrate, a conductive pattern formed over the semiconductor substrate and the isolation insulating film, so that a side face of the conductive pattern is formed over the isolation insulating film, and an insulating film is formed over the isolation insulating film, the conductive pattern and the side face of the conductive pattern, and the side face of the conductive pattern comprises a notch.
    Type: Application
    Filed: August 29, 2011
    Publication date: December 22, 2011
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Makoto Takahashi, Minoru Endou
  • Semiconductor device and method for manufacturing the same
    Patent number: 8030732
    Abstract: A semiconductor device which has a semiconductor substrate, an isolation insulating film formed in the semiconductor substrate, a conductive pattern formed over the semiconductor substrate and the isolation insulating film, so that a side face of the conductive pattern is formed over the isolation insulating film, and an insulating film is formed over the isolation insulating film, the conductive pattern and the side face of the conductive pattern, and the side face of the conductive pattern comprises a notch.
    Type: Grant
    Filed: March 10, 2009
    Date of Patent: October 4, 2011
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Makoto Takahashi, Minoru Endou
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090230452
    Abstract: A semiconductor device which has a semiconductor substrate, an isolation insulating film formed in the semiconductor substrate, a conductive pattern formed over the semiconductor substrate and the isolation insulating film, so that a side face of the conductive pattern is formed over the isolation insulating film, and an insulating film is formed over the isolation insulating film, the conductive pattern and the side face of the conductive pattern, and the side face of the conductive pattern comprises a notch.
    Type: Application
    Filed: March 10, 2009
    Publication date: September 17, 2009
    Applicant: FUJITSU MICROELECTRONICS LIMITED
    Inventors: Makoto TAKAHASHI, Minoru ENDOU