Abstract: A display device having, in a single display screen, a first display area which requires power for displaying information, and a second display area, having a smaller dimension than the first display area and which requires power for displaying information. The display of each of the first and second display areas being selectively in an off-state or an on-state. The display device is configured to display, in the second display area, a display content relevant to an operation of a user or to information necessary for the user, in a case where the display of the first display area is in the on-state. In addition, the display device is configured to rotate an orientation of the display content as suitable for an orientation of the display device.

Abstract: A display method for displaying performed by a display device having, in a display screen, a first display area (1) which requires power for displaying information, and a second display area (2), having a smaller dimension than the first display area, which requires power for displaying information, and including a housing (3) framing the display screen, the housing having a surface on a same side of the display screen, on which surface any operating section for touch operation is not provided, the method including displaying constantly information in the second display area (2) regardless of whether the first display area (1) is in the on-state or the off-state.

Abstract: A solid-state image sensing device has a photoreceptive element for storing an information charge generated in response to an incident light and a charge-retaining element for retaining the information charge as it is, adjacently arranged on the surface of a semiconductor substrate, wherein the photoreceptive element and the charge-retaining element can bidirectionally transfer the information charge according to a transfer clock signal.

Abstract: Light detecting elements are formed in areas marked off by scribe lines on a semiconductor substrate, and color filters are deposited in such a manner as to cover the formed areas of the light detecting elements, and then an infrared cut-off filter, on which an infrared reflecting film is vapor-deposited in such a manner as to cover the formed areas of the light detecting elements, is firmly fixed to the surface of the semiconductor substrate through the interposition of a translucent resin layer, such as an epoxy adhesive, to thereby form a multilayered structure, and this multilayered structure is diced along scribe lines.

Abstract: A solid-state image sensing device has a photoreceptive element for storing an information charge generated in response to an incident light and a charge-retaining element for retaining the information charge as it is, adjacently arranged on the surface of a semiconductor substrate, wherein the photoreceptive element and the charge-retaining element can bidirectionally transfer the information charge according to a transfer clock signal.

Abstract: Light detecting elements are formed in areas marked off by scribe lines on a semiconductor substrate, and color filters are deposited in such a manner as to cover the formed areas of the light detecting elements, and then an infrared cut-off filter, on which an infrared reflecting film is vapor-deposited in such a manner as to cover the formed areas of the light detecting elements, is firmly fixed to the surface of the semiconductor substrate through the interposition of a translucent resin layer, such as an epoxy adhesive, to thereby form a multilayered structure, and this multilayered structure is diced along scribe lines.

Abstract: An image sensor having a mosaic color filter mounted thereon synthesizes and takes out information charge of multiple pixels. In an image sensor (11), the number of bits of the odd-numbered columns of shift registers of a storage section (11s) is different from that of the even-numbered columns. During the transfer process of information charge from the storage section (11s) to a horizontal transfer section (11h), pixels are divided between the even-numbered columns and odd-numbered columns. The image sensor (11) discharges the information charge from an output section (11d) in response to a reset clock &phgr;r1 having a clock cycle twice as long as a horizontal clock &phgr;h, whereby the information charge is synthesized every two pixels. As the pixels are divided between the odd-numbered columns and the even-numbered columns, the information charge related to the same color component continues in the horizontal transfer section (11h).

Abstract: Chip area is reduced using a CCD solid state image pick-up device of a frame transfer system. Permanent accumulation pixels for accumulating information charges in a first imaging operation to photograph a coarse image and a second imaging operation to photograph a fine image, and selective accumulation pixels for accumulating information charges in only the second imaging operation are arranged in an image pick-up section 11i of a solid state image pick-up device 11. The permanent accumulation pixels are disposed every, for example, three rows of the selective accumulation pixels. The number of rows of a storage section 11s is arranged to correspond with the number of rows of the permanent accumulation pixels of the image pick-up section 11i. The permanent accumulation pixel and the selective accumulation pixel have the same construction on a substrate and are distinguished by frame transfer clocks .phi.a and .phi.b to be supplied.

Abstract: A depletion type transistor formed on a semiconductor substrate includes a drain region and a source region formed in distinct areas on the substrate. An inversion layer is formed in the surface area between the drain and the source regions. The transistor further includes two insulated gates: a floating gate located above the substrate and insulated from the inversion layer by an insulating layer in such a way as to cover the inversion layer, and a control gate provided above the floating gate and insulated from the floating gate by the insulating layer.

Abstract: A depletion type transistor formed on a semiconductor substrate includes a drain region and a source region formed in distinct areas on the substrate. An inversion layer is formed in the surface area between the drain and the source regions. The transistor further includes two insulated gates: a floating gate located above the substrate and insulated from the inversion layer by an insulating layer in such a way as to cover the inversion layer, and a control gate provided above the floating gate and insulated from the floating gate by the insulating layer.

Abstract: The operational method is disclosed, for storing analog data in an electrically programmable and erasable memory cell. The memory cell includes a transistor having a source, a drain, a control gate and a floating gate, where the source, the drain and a channel region therebetween being defined in a semiconductor substrate, the floating gate operating to accumulate charge and being capacitively coupled to the source and the control gate. The method includes the steps of: erasing data in the memory cell, and storing analog data in the memory cell. The erasing step including at least the steps of: i) applying a predetermined first erase voltage to the control gate, ii) applying a ground voltage to the drain to erase the memory cell, wherein charges moved from the channel region are accumulated in the floating gate, thereby erasing data in the memory cell.

Abstract: There is disclosed a stabilized oxymethylene copolymer composition comprising a blend of an oxymethylene copolymer and an alkaline earth metal salt of an ester of a tribasic inorganic acid of an organic carboxylic acid monoester of an alcohol having two or more hydroxyl groups, as the stabilizer.

Abstract: This invention relates to a static random access memory having the so-called divided word-line structure, uses the power supply line also as the common word line so as to enable operation at high speed without causing complication in structure of the wiring layer, resulting in that the manufacturing yield can be improved and a manufacturing coat lowers.

Abstract: An analog value storing apparatus comprises a semiconductor field-effect device, including a substrate, a source and drain formed to define a channel region, a floating gate embedded in an insulating layer on the channel region, a control gate connected to the ground on the insulating layer above the floating gate, a write voltage source coupled to the source to supply a write voltage to charge the floating gate, a resistor having a relatively high resistance value inserted between the write voltage source and the source, and an analog value voltage source connected to the drain. As a result, the floating gate begins to be charged with the write voltage and the analog voltage and stops being charged with the voltage at the source determined as voltage division of the write voltage and the analog voltage by the high resistance value of the resistor and the internal resistance value of the device.

Abstract: A polyacetal copolymer composed of an acetal polymer portion and a thermoplastic elastomer portion having soft segments and hard segments, the second-order transition temperature of said elastomer portion being in the range of -120.degree. to 40.degree. C. A process for producing such a polyacetal copolymer is also described.

Abstract: A process for producing a polyacetal copolymer, which comprises copolymerizing formaldehyde and a compound selected from the group consisting of alkylene oxides, poly(alkylene oxides), cyclic formals and poly (cyclic formals) in the presence of a Lewis acid and an anionic polymerization catalyst with the exception of metal chelate compounds.

Abstract: A polyoxymethylene composition comprising (a) 100 parts by weight of polyoxymethylene, (b) 2 to 15 parts by weight of electrically conductive carbon black, and (c) 2 to 20 parts by weight of low-density polyethylene has excellent antistatic properties. Shaped articles produced by the polyoxymethylene composition show excellent effects on preventing noise due to static electricity and adhesion of dust.

Abstract: In a process for preparing polyoxymethylenes by polymerizing formaldehyde in the presence of an anionic polymerization catalyst, the use of a polyhydric alcohol having at least three alcoholic hydroxyl groups in the molecule permits the preparation of polyoxymethylenes which have desired molecular weights along with improved melt fluidity and which are excellent in processability.

Abstract: A polyacetal suitable for moldings which are excellent in lubricity, wear and antistatic properties, which has at least one terminal of its linear polymer molecule capped with an alkylene oxide adduct of an alcohol or a carboxylic acid, which adduct is of the formula ##STR1## wherein R.sub.o is a hydrogen atom, alkyl group, substituted alkyl group, aryl group, or substituted aryl group, R.sub.o 's may be the same or different, R.sub.1 is an alkyl group, substituted alkyl group, aryl group, or substituted aryl group, R.sub.2 is a hydrogen atom, alkyl group, substituted alkyl group, aryl group, or substituted aryl group, m is from 2 to 6, and n is from 1 to 1,000; the number average molecular weight of said polyacetal being in the range from 10,000 to 500,000 excluding the terminal group.

Abstract: The invention is related to a container for holding liquids such as a 200 liter removable head steel drum. The drum is provided with an inner bag which lines the inside periphery of the drum and thereby prevents the sealing or coating liquid contained or being dumped into the drum from contacting the inside periphery of the drum. The inner bag is disposable. Thus the drum can be recycled or regenerated for reuse at a reasonable cost. Further, the inner bag prevents the liquid from being contaminated by the foreign matter located on the drum inner surface. The inner bag is removably fitted to the inside of the drum by a fixing means. The fixing means is removably fitted to at least one annular recess normally present on the inside periphery of the drum with or without the presence of the inner bag disposed between the recess and the fixing means.