Patents by Inventor Minoru Imaeda

Minoru Imaeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060257084
    Abstract: An optical waveguide device has a substrate composed of a nonlinear optical material and a periodically domain-inverted structure having the same composition as the nonlinear optical material, where the domain-inverted structure has a refractive index distribution relying on the domain-inverted structure.
    Type: Application
    Filed: December 22, 2003
    Publication date: November 16, 2006
    Inventors: Kiminori Mizuuchi, Kazuhisa Yamamoto, Minoru Imaeda, Tatsuo Kawaguchi, Takashi Yoshino
  • Publication number: 20060120415
    Abstract: It is provided system and method of oscillating blue laser beam having a relatively high conversion efficiency and whose output power of the blue laser beam can be improved. Light emitted from a broad area semiconductor laser device 2 of Fabry-Perot type is irradiated into a slab optical waveguide 8 made of a non-linear optical crystal as a fundamental wave “A”. Blue laser beam “B” is emitted from the slab optical waveguide 8.
    Type: Application
    Filed: January 10, 2006
    Publication date: June 8, 2006
    Applicant: NGK Insulators, Ltd.
    Inventors: Makoto Iwai, Katsuhiro Imai, Takashi Yoshino, Minoru Imaeda
  • Publication number: 20060109542
    Abstract: An optical waveguide device includes a waveguide layer that converts a wavelength of incident light and emits converted light. In the waveguide layer, a ridge waveguide and slab waveguides are provided, the slab waveguides being formed on both sides of the ridge waveguide with recess portions intervening therebetween. The waveguide layer satisfies a multi-mode condition for the incident light, and light propagating through the ridge waveguide is in a single mode.
    Type: Application
    Filed: December 22, 2003
    Publication date: May 25, 2006
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kiminori Mizuuchi, Kazuhisa Yamamoto, Minoru Imaeda, Tatsuo Kawaguchi, Takashi Yoshino
  • Publication number: 20050039322
    Abstract: Major surface of a substrate having an optical waveguide and a modulation electrode is pasted to a base substrate through a thermosetting resin, and then the rear surface of the substrate is machined thus making thin the entirety. Subsequently, the rear surface of the substrate thus rendered thin is subjected to machining or laser machining to form a thin part, which is further subjected to machining or laser machining to form a first thin part at a part, including the optical waveguide, of the thin part and a second thin part thinner than the first thin part contiguously thereto. Thereafter, the rear surface of the substrate is pasted to the major surface of a supporting substrate through a thermosetting resin and the base substrate is stripped thus obtaining an optical modulator.
    Type: Application
    Filed: September 16, 2004
    Publication date: February 24, 2005
    Applicant: NGK Insulators, Ltd.
    Inventors: Jungo Kondo, Yukio Mizuno, Minoru Imaeda, Atsuo Kondo
  • Patent number: 6807210
    Abstract: An object of the present invention is to provide a practical device for generating blue laser beam having a wavelength of 457 nm. The present invention provides a device for generating blue laser beam. The device has a solid-state laser oscillator 3 composed of Nd-doped YVO4 crystal and having a length of not smaller than 0.1 mm and not larger than 1.0 mm, a reflecting means 6A, 6B provided in the oscillator 3, an illuminating means 1 for illuminating pump light beam to the oscillator 3, and a waveguide-type device 5 for generating harmonic wave. The oscillator 3 and reflecting means 1 constitute a resonator 7. The waveguide-type device 5 is provided outside of the resonator 7. The oscillator 3 oscillates laser beam having a wavelength of 914±1 nm, and the waveguide-type device 5 oscillates blue laser “E” having a wavelength of 457±1 nm.
    Type: Grant
    Filed: March 26, 2003
    Date of Patent: October 19, 2004
    Assignee: NGK Insulators, Ltd.
    Inventors: Makoto Iwai, Takashi Yoshino, Minoru Imaeda
  • Patent number: 6687448
    Abstract: A method of processing a substrate made of a ferroelectric single crystalline material, including the steps of forming a desired proton-exchanged layer in the substrate by proton-exchanging a portion of the substrate, and selectively removing the proton-exchanged layer to form a concave ditch structure in the ferroelectric single crystalline substrate, wherein the desired proton-exchange layer is formed by using an acid containing a lithium salt as a proton-exchanging source, the surface of the substrate from which the concave ditch structure is formed is an X-cut surface or a Z-cut surface, as a main surface, of the ferroelectric single crystalline material used as the substrate, and the concave ditch structure has a recessed portion with its depth equal to or larger than its half opening width.
    Type: Grant
    Filed: February 16, 1999
    Date of Patent: February 3, 2004
    Assignee: NGK Insulators, Ltd.
    Inventors: Makoto Iwai, Tatsuo Kawaguchi, Minoru Imaeda
  • Patent number: 6654529
    Abstract: A method for producing an optical waveguide part includes the steps of preparing a ferroelectric single crystalline substrate having a polarization-axis substantially parallel to a main surface thereof and having a given ferroelectric domain-inverted pattern, and epitaxially growing a ferroelectric single crystalline film on the ferroelectric single crystalline substrate. The ferroelectric domain-inverted pattern is thereby transcribed from the substrate into the ferroelectric single crystalline film to form a ferroelectric domain-inverted structure therein.
    Type: Grant
    Filed: August 16, 1999
    Date of Patent: November 25, 2003
    Assignee: NGK Insulators, Ltd.
    Inventors: Tatsuo Kawaguchi, Minoru Imaeda
  • Publication number: 20030206565
    Abstract: An object of the present invention is to provide a practical device for generating blue laser beam having a wavelength of 457 nm. The present invention provides a device for generating blue laser beam. The device has a solid-state laser oscillator 3 composed of Nd-doped YVO4 crystal and having a length of not smaller than 0.1 mm and not larger than 1.0 mm, a reflecting means 6A, 6B provided in the oscillator 3, an illuminating means 1 for illuminating pump light beam to the oscillator 3, and a waveguide-type device 5 for generating harmonic wave. The oscillator 3 and reflecting means 1 constitute a resonator 7. The waveguide-type device 5 is provided outside of the resonator 7. The oscillator 3 oscillates laser beam having a wavelength of 914±1 nm, and the waveguide-type device 5 oscillates blue laser “E” having a wavelength of 457±1 nm.
    Type: Application
    Filed: March 26, 2003
    Publication date: November 6, 2003
    Applicant: NGK INSULATORS, LTD.
    Inventors: Makoto Iwai, Takashi Yoshino, Minoru Imaeda
  • Patent number: 6631231
    Abstract: An optical waveguide element includes a three-dimensional optical waveguide of a bulky non-linear optical crystal, a substrate, and a joining layer made of an amorphous material. The substrate is joined to the optical waveguide via the joining layer.
    Type: Grant
    Filed: March 16, 2001
    Date of Patent: October 7, 2003
    Assignees: Matsushita Electric Industrial Co., Ltd., NGK Insulators, Ltd.
    Inventors: Kiminori Mizuuchi, Kazuhisa Yamamoto, Tatsuo Kawaguchi, Takashi Yoshino, Minoru Imaeda, Kenji Aoki, Osamu Mitomi
  • Patent number: 6565654
    Abstract: In a process for producing a planar body of an oxide single crystal with a &mgr; pulling-down method, a shoulder portion having a larger width is grown without any polycrystal regions, cracks or crystal deteriorations in a central portion of the planar body. A raw material of the oxide single crystal is melted in a crucible. A seed crystal is contacted to a melt of the raw material near an opening of a nozzle 13 of the crucible. Then, the melt 18 is drawn from the opening by pulling down the seed crystal to form a planar body 14A. A temperature distribution of the nozzle 13 in a direction perpendicular to the drawing direction B is controlled by supplying heat to the nozzle 13 and/or by removing heat from the nozzle 13.
    Type: Grant
    Filed: July 2, 2001
    Date of Patent: May 20, 2003
    Assignee: NGK Insulators, Ltd.
    Inventors: Toshihisa Yokoyama, Masahiro Murasato, Katsuhiro Imai, Minoru Imaeda
  • Patent number: 6527851
    Abstract: A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.
    Type: Grant
    Filed: March 2, 2001
    Date of Patent: March 4, 2003
    Assignee: NGK Insulators, Ltd.
    Inventors: Katsuhiro Imai, Akihiko Honda, Minoru Imaeda
  • Patent number: 6451110
    Abstract: A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A planar seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A planar body 14 is produced following the seed crystal 15. In this case, differences in lattice constants between each crystal axis of the seed crystal 15 and each corresponding crystal axis of the planar body 14 is controlled at 0.1% or less, respectively.
    Type: Grant
    Filed: March 5, 2001
    Date of Patent: September 17, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Katsuhiro Imai, Akihiko Honda, Minoru Imaeda
  • Patent number: 6447603
    Abstract: A process is disclosed for producing an oxide single crystal, including the steps of: melting a raw material for a single crystal of an oxide inside a crucible, contacting a seed crystal with the resulting melt, growing the oxide single crystal by pulling-down the melt through an opening of the crucible in a given pulling-down axis, and fixedly holding the seed crystal and then reducing an angle of a given crystalline orientation of the seed crystal selected for growing the single crystal to the pulling-down axis.
    Type: Grant
    Filed: February 26, 2001
    Date of Patent: September 10, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Katsuhiro Imai, Akihiko Honda, Minoru Imaeda
  • Patent number: 6447606
    Abstract: A method for producing a single-crystalline film made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, including the steps of preparing a target made of a material for the single-crystalline film, preparing a foundation made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, irradiating the target to gasify molecules constituting the target by dissociation and evaporation thereof, and epitaxially growing the single-crystalline film on the foundation.
    Type: Grant
    Filed: May 26, 1999
    Date of Patent: September 10, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Minoru Imaeda, Takashi Yoshino
  • Patent number: 6402835
    Abstract: In a process for producing a raw material powder including lithium potassium niobate for growing a single crystal of lithium potassium niobate, raw starting materials comprising lithium carbonate powder, potassium carbonate powder and niobium pentoxide powder are mixed in a solvent. The lithium carbonate powder and potassium carbonate powder are entirely dissolved into the solvent, and lithium carbonate and potassium carbonate are then deposited around the niobium pentoxide powder by spray-drying the mixture to obtain granulated powder, and then the granulated powder is thermally treated to produce the raw material powder.
    Type: Grant
    Filed: February 9, 2001
    Date of Patent: June 11, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Masahiro Murasato, Akihiko Honda, Katsuhiro Imai, Minoru Imaeda
  • Patent number: 6404968
    Abstract: A process for producing an optical waveguide element by thermally diffusing a metal element or a metallic compound into a substrate having a photoelectric effect, includes the steps of: forming a waveguide pattern on the substrate, the waveguide pattern includes a metal element or metallic compound; forming a film on a main plane of the substrate that covers the entire waveguide pattern, the film having an electro-optic effect; and effecting the thermal diffusion of the metallic element or the metallic compound.
    Type: Grant
    Filed: March 7, 2000
    Date of Patent: June 11, 2002
    Assignees: NEC Corporation, NGK Insulators, Ltd.
    Inventors: Yukinobu Nakabayashi, Mitsuhiro Kitamura, Tatsuo Kawaguchi, Jungo Kondo, Minoru Imaeda
  • Patent number: 6368407
    Abstract: An equipment is disclosed for producing a single crystal in each of plural containers by thermally treating a raw material for the single crystal each charged in each of the container, including heaters provided corresponding to each of the containers, an elevator to move each of the containers upward and downward relatively to the respective one of the heaters, and a connecting member to connect at least one of the container and the heater of each of plural sets of the containers and the heaters mechanically to the elevator, wherein each container is moved vertically relatively to the respective one of the heaters by driving the elevator and passed through an area of thermal treatment formed by the heater to continuously form a melt in the raw material inside the container, and the single crystal is continuously produced in the container by solidifying the melt.
    Type: Grant
    Filed: April 19, 2001
    Date of Patent: April 9, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Ryuichi Ohuchi, Minoru Imaeda
  • Patent number: 6363189
    Abstract: A directional coupler including a substrate having a length and containing a material that exhibits electrooptic properties, the substrate being divided into a plurality of reversed polarization domains along a direction of length. At least two optical waveguides are formed in the substrate in the direction of length thereof and substantially parallel to a main surface thereof. An electrode is disposed above a portion of each optical waveguide for modulating light waves propagating through the waveguides, respectively, the electrode being divided equally by at least a portion of a boundary surface between the plurality of reversed polarization domains.
    Type: Grant
    Filed: March 7, 2000
    Date of Patent: March 26, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Makoto Minakata, Jungo Kondo, Tatsuo Kawaguchi, Minoru Imaeda
  • Publication number: 20020029736
    Abstract: In a process for producing a planar body of an oxide single crystal with a &mgr; pulling-down method, a shoulder portion having a larger width is grown without any polycrystal regions, cracks or crystal deteriorations in a central portion of the planar body. A raw material of the oxide single crystal is melted in a crucible. A seed crystal is contacted to a melt of the raw material near an opening of a nozzle 13 of the crucible. Then, the melt 18 is drawn from the opening by pulling down the seed crystal to form a planar body 14A. A temperature distribution of the nozzle 13 in a direction perpendicular to the drawing direction B is controlled by supplying heat to the nozzle 13 and/or by removing heat from the nozzle 13.
    Type: Application
    Filed: July 2, 2001
    Publication date: March 14, 2002
    Inventors: Toshihisa Yokoyama, Masahiro Murasato, Katsuhiro Imai, Minoru Imaeda
  • Patent number: 6353495
    Abstract: A method for forming a ferroelectric domain-inverted structure, having the steps of joining at least two kinds of ferroelectric material which have different spontaneous polarizations, and ferroelectric domain-inverting one of the ferroelectric materials and thereby ferroelectric domain-inverting the other ferroelectric material joined thereto.
    Type: Grant
    Filed: August 16, 1999
    Date of Patent: March 5, 2002
    Assignees: Matsushita Electric Industrial Co., Ltd., NGK Insulators, Ltd.
    Inventors: Kiminori Mizuuchi, Kazuhisa Yamamoto, Tatsuo Kawaguchi, Minoru Imaeda