Patents by Inventor Minoru Isshiki

Minoru Isshiki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070225437
    Abstract: A curable silicone composition includes: (A) an organopolysiloxane represented by the siloxane unit formula (1) given below and having at least two univalent organic groups that contain epoxy groups and are free of aromatic rings: [R13SiO1/2]a [R22SiO2/2]b [R3SiO3/2]c (where R1, R2, and R3 are univalent organic groups, at least two of which are contain epoxy groups and are free of aromatic rings; more than 20 mole % of R3 are aryl groups; a+b+c & equals; 1; on average, “a” satisfies the following condition: 0?a?0.8; on average, “b” satisfies the following condition: 0?b?0.8; and, on average satisfies the following condition: 0.2?c?1.0); (B) a linear-chain organopolysiloxane having at least two univalent organic groups that contain phenolic hydroxyl groups; and (C) a curing accelerator.
    Type: Application
    Filed: November 4, 2004
    Publication date: September 27, 2007
    Inventors: Yoshitsugu Morita, Minoru Isshiki, Hiroshi Ueki, Atsushi Togashi
  • Publication number: 20070180953
    Abstract: High purity cobalt with a very few content of impurities such as copper, a method of manufacturing thereof, and high purity cobalt targets are provided. The cobalt containing impurities such as copper is dissolved in a hydrochloric acid solution, and the concentration of the hydrochloric acid of the aqueous solution of cobalt chloride is adjusted to 0.1 kmol/m3 to 3 kmol/m3. Then, cobalt is added in the aqueous solution of cobalt chloride, and an inert gas is injected into the solution with agitating, in order to convert the divalent copper ions contained in the aqueous solution of cobalt chloride to monovalent copper ions. Then, the aqueous solution of cobalt chloride is fed into a column filled up with the anion exchange resins. Cobalt is not absorbed on the anion exchange resins although the monovalent copper ions are absorbed on the anion exchange resins. Therefore, copper can be separated from the aqueous solution of cobalt chloride.
    Type: Application
    Filed: March 17, 2004
    Publication date: August 9, 2007
    Inventors: Masahito Uchikoshi, Norio Yokoyama, Tamas Kekesi, Minoru Isshiki
  • Publication number: 20040241927
    Abstract: A curable organopolysiloxane composition capable of forming cured products of superior optical transmittance exhibiting little heat-induced yellowing over time. A semiconductor device having semiconductor elements encapsulated in a cured product of the composition. The composition includes (A) an organopolysiloxane having at least two silicon-bonded alkenyl groups per molecule and bearing silicon-bonded aryl groups, whose content relative to all silicon-bonded organic groups is not less than 40 mol %, (B) an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule, and (C) an organosiloxane oligomer complex of platinum, where the oligomer has not more than eight silicon atoms per molecule and bears silicon-bonded alkenyl groups and silicon-bonded aryl groups.
    Type: Application
    Filed: April 27, 2004
    Publication date: December 2, 2004
    Inventors: Tomoko Kato, Minoru Isshiki
  • Patent number: 6761947
    Abstract: A silicone-based adhesive sheet prepared by a process comprising (i) curing a silicone composition to form a substantially cured product while the composition lies between backing materials, wherein at least one of the backing materials has a surface comprising oxygen atoms and/or sulfur atoms in contact with the silicone composition and the backing materials are releasable from the cured product, and (ii) separating the cured product from the backing materials. A method of manufacturing a silicone-based adhesive sheet comprising (i) curing a silicone composition to form a cured product while the composition lies between backing materials, wherein at least one of the backing materials has a surface comprising oxygen atoms and/or sulfur atoms in contact with the silicone composition and the backing materials are releasable from the cured product, and (ii) separating the cured product from the backing materials.
    Type: Grant
    Filed: January 17, 2003
    Date of Patent: July 13, 2004
    Assignee: Dow Corning Toray Silicone Co., Ltd.
    Inventors: Kimio Yamakawa, Minoru Isshiki, Yoshiko Otani, Katsutoshi Mine
  • Patent number: 6750550
    Abstract: An adhesive composition for bonding semiconductor chips to their chip mounting components comprising a curable polymer composition comprising from 1 to 900 weight-ppm spherical filler having an average particle size of from 10 to 100 &mgr;m and a major axis-to-minor axis ratio of from 1 to 1.5. Also, semiconductor devices in which a semiconductor chip therein is bonded to its chip mounting component by the aforesaid adhesive composition.
    Type: Grant
    Filed: June 20, 2000
    Date of Patent: June 15, 2004
    Assignee: Dow Corning Toray Silicone Co., Ltd.
    Inventors: Kimio Yamakawa, Minoru Isshiki, Katsutoshi Mine
  • Patent number: 6740290
    Abstract: High purity cobalt with a very few content of impurities such as copper, a method of manufacturing thereof, and high purity cobalt targets are provided. The cobalt containing impurities such as copper is dissolved in a hydrochloric acid solution, and the concentration of the hydrochloric acid of the aqueous solution of cobalt chloride is adjusted to 0.1 kmol/m3 to 3 kmol/m3. Then, cobalt is added in the aqueous solution of cobalt chloride, and an inert gas is injected into the solution with agitating, in order to convert the divalent copper ions contained in the aqueous solution of cobalt chloride to monovalent copper ions. Then, the aqueous solution of cobalt chloride is fed into a column filled up with the anion exchange resins. Cobalt is not absorbed on the anion exchange resins although the monovalent copper ions are absorbed on the anion exchange resins. Therefore, copper can be separated from the aqueous solution of cobalt chloride.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: May 25, 2004
    Assignees: Sony Corporation
    Inventors: Masahito Uchikoshi, Norio Yokoyama, Tamas Kekesi, Minoru Isshiki
  • Patent number: 6720083
    Abstract: An adhesive composition for bonding of semiconductor chips to their chip mounting components comprising a curable polymer composition that comprises a spherical filler having an average particle size from greater than 100 to 1,000 &mgr;m and an aspect ratio of 1 to 1.5. Semiconductor devices according to this invention are characterized in that a semiconductor chip therein is bonded to the mounting component for said chip by the aforementioned adhesive.
    Type: Grant
    Filed: March 20, 2002
    Date of Patent: April 13, 2004
    Assignee: Dow Corning Toray Silicone Co., Ltd.
    Inventors: Kimio Yamakawa, Minoru Isshiki, Katsutoshi Mine
  • Publication number: 20030206822
    Abstract: High purity iron with a very few content of impurities such as copper, a method of manufacturing thereof, and high purity iron targets are provided. The iron containing impurities such as copper is dissolved in a hydrochloric acid solution, and the concentration of the hydrochloric acid of the aqueous solution of iron chloride is adjusted to 0.1 kmol/m3 to 6 kmol/m3. Then, iron is added in the aqueous solution of iron chloride, and an inert gas is injected into the solution with agitating, in order to convert the trivalent iron ions and divalent copper ions contained in the aqueous solution of iron chloride respectively to divalent iron ions and monovalent copper ions. Then, the aqueous solution of iron chloride is fed into a column filled up with the anion exchange resins. The divalent iron ions are not absorbed on the anion exchange resins although the monovalent copper ions are absorbed on the anion exchange resins. Therefore, copper can be separated from the aqueous solution of iron chloride.
    Type: Application
    Filed: May 28, 2003
    Publication date: November 6, 2003
    Inventors: Masahito Uchikoshi, Norio Yokoyama, Tamas Kekesi, Minoru Isshiki
  • Patent number: 6621173
    Abstract: A semiconductor device having a semiconductor chip; a semiconductor chip attachment element facing the semiconductor chip, at least one interconnect on the surface of the semiconductor chip attachment element; and at least one member consisting of a metal or metal alloy that electrically connects the semiconductor chip with the interconnects; wherein the semiconductor chip is bonded to the semiconductor chip attachment element by an adhesive and at least a portion of at least one member that electrically connects the semiconductor chip with at least one interconnect is sealed or imbedded with a sealant/filling agent, and the complex modulus of at least one of the adhesive and the sealant/filling agent is not greater than 1×108 Pa at −65° C. and a shear frequency of 10 Hz.
    Type: Grant
    Filed: January 14, 2000
    Date of Patent: September 16, 2003
    Assignee: Dow Corning Toray Silicone Co., Ltd.
    Inventors: Kimio Yamakawa, Minoru Isshiki, Yoshiko Otani, Katsutoshi Mine
  • Publication number: 20030129347
    Abstract: A silicone-based adhesive sheet prepared by a process comprising (i) curing a silicone composition to form a substantially cured product while the composition lies between backing materials, wherein at least one of the backing materials has a surface comprising oxygen atoms and/or sulfur atoms in contact with the silicone composition and the backing materials are releasable from the cured product, and (ii) separating the cured product from the backing materials. A method of manufacturing a silicone-based adhesive sheet comprising (i) curing a silicone composition to form a cured product while the composition lies between backing materials, wherein at least one of the backing materials has a surface comprising oxygen atoms and/or sulfur atoms in contact with the silicone composition and the backing materials are releasable from the cured product, and (ii) separating the cured product from the backing materials.
    Type: Application
    Filed: January 17, 2003
    Publication date: July 10, 2003
    Inventors: Kimio Yamakawa, Minoru Isshiki, Yoshiko Otani, Katsutoshi Mine
  • Patent number: 6551676
    Abstract: A silicone-based adhesive sheet prepared by a process comprising (i) curing a silicone composition to form a substantially cured product while the composition lies between backing materials, wherein at least one of the backing materials has a surface comprising oxygen atoms and/or sulfur atoms in contact with the silicone composition and the backing materials are releasable from the cured product, and (ii) separating the cured product from the backing materials. A method of manufacturing a silicone-based adhesive sheet comprising (i) curing a silicone composition to form a cured product while the composition lies between backing materials, wherein at least one of the backing materials has a surface comprising oxygen atoms and/or sulfur atoms in contact with the silicone composition and the backing materials are releasable from the cured product, and (ii) separating the cured product from the backing materials.
    Type: Grant
    Filed: August 27, 1999
    Date of Patent: April 22, 2003
    Assignee: Dow Corning Toray Silicone Company, Ltd.
    Inventors: Kimio Yamakawa, Minoru Isshiki, Yoshiko Otani, Katsutoshi Mine
  • Patent number: 6518204
    Abstract: A curable organopolysiloxane composition comprises: (A) an organopolysiloxane with two or more silicon-bonded hydrogen atoms contained in one molecule in an amount not exceeding 0.05 wt. %; (B) an organopolysiloxane with two or more alkenyl groups in one molecule {alkenyl groups of this components are to be in an amount of 0.01 to 1 mole per 1 mole of a silicon-bonded hydrogen atoms contained in said component (A)}; and (C) a hydrosilylation-reaction metal catalyst (with content of metal atoms within the range of 0.01 to 1,000 ppm in terms of weight units). A method of manufacturing a semiconductor device comprises: applying onto the surface of a semiconductor device and curing, the aforementioned curable organopolysiloxane composition.
    Type: Grant
    Filed: March 7, 2002
    Date of Patent: February 11, 2003
    Assignee: Dow Corning Toray Silicone Company, Ltd.
    Inventors: Kimio Yamakawa, Kazumi Nakayoshi, Hiroki Ishikawa, Ryoto Shima, Junji Nakanishi, Tomoko Kato, Minoru Isshiki, Katsutoshi Mine
  • Patent number: 6513680
    Abstract: A paste dispensing container comprising a cylindrical container having positioned therein a piston slidable along the walls of the container, a first end closed with a cap to seal paste within the container, a connecting portion at a second end of the container for connection with a pressurized fluid supply, and a leakage preventing cover having an air orifice covering the second end of the container. The paste dispensing container can be vacuum packaged in a gas-impermeable film for shipping and storage to prevent exposure of the paste contained therein to air.
    Type: Grant
    Filed: April 25, 2001
    Date of Patent: February 4, 2003
    Assignee: Dow Corning Toray Silicone Co., LTD.
    Inventors: Kazumi Nakayoshi, Hiroki Ishikawa, Ryoto Shima, Junji Nakanishi, Tomoko Kato, Minoru Isshiki, Kimio Yamakawa
  • Publication number: 20030018112
    Abstract: A chlorinated vinyl chloride resin composition comprising 100 parts by weight of chlorinated vinyl chloride resin and a hydroxypolycarboxylic acid salt, e.g., sodium tartrate, and/or 0.2 to 1.5 parts by weight of zeolite. The composition exhibits improved thermal stability and is particularly suited to pipe extrusion.
    Type: Application
    Filed: September 4, 2002
    Publication date: January 23, 2003
    Applicant: KANEKA CORPORATION
    Inventors: Toshio Okuhara, Tadashi Tadokoro, Hiroaki Shiota, Takeyuki Suzuki, Minoru Isshiki
  • Patent number: 6498400
    Abstract: A semiconductor device comprising a semiconductor element; a substrate; and a hot-melt adhesive sheet bonding the semiconductor element to the substrate, wherein the hot-melt adhesive sheet comprises a spacer having the form of a sheet and a hot melt adhesive on both sides of the spacer. A semiconductor device comprising a semiconductor element; a substrate; and a hot-melt adhesive sheet bonding the semiconductor element to the substrate, wherein the hot-melt adhesive sheet comprises a mixture of a hot melt adhesive and a spacer, wherein the adhesive is selected from a silicone-modified epoxy resin adhesive, a silicone adhesive, and a silicone-modified polyimide adhesive, and the spacer has the form of particles.
    Type: Grant
    Filed: March 21, 2001
    Date of Patent: December 24, 2002
    Assignee: Dow Corning Toray Silicone Co., LTD
    Inventors: Kimio Yamakawa, Minoru Isshiki, Yoshiko Otani, Katsutoshi Mine
  • Publication number: 20020160624
    Abstract: A curable organopolysiloxane composition comprises: (A) an organopolysiloxane with two or more silicon-bonded hydrogen atoms contained in one molecule in an amount not exceeding 0.05 wt. %; (B) an organopolysiloxane with two or more alkenyl groups in one molecule {alkenyl groups of this components are to be in an amount of 0.01 to 1 mole per 1 mole of a silicon-bonded hydrogen atoms contained in said component (A)}; and (C) a hydrosilylation-reaction metal catalyst (with content of metal atoms within the range of 0.01 to 1,000 ppm in terms of weight units). A method of manufacturing a semiconductor device comprises: applying onto the surface of a semiconductor device and curing, the aforementioned curable organopolysiloxane composition.
    Type: Application
    Filed: March 7, 2002
    Publication date: October 31, 2002
    Inventors: Kimio Yamakawa, Kazumi Nakayoshi, Hiroki Ishikawa, Ryoto Shima, Junji Nakanishi, Tomoko Kato, Minoru Isshiki, Katsutoshi Mine
  • Patent number: 6469079
    Abstract: A chlorinated vinyl chloride resin composition comprising 100 parts by weight of chlorinated vinyl chloride resin and a hydroxypolycarboxylic acid salt, e.g., sodium tartrate, and/or 0.2 to 1.5 parts by weight of zeolite. The composition exhibits improved thermal stability and is particularly suited to pipe extrusion.
    Type: Grant
    Filed: November 10, 1999
    Date of Patent: October 22, 2002
    Assignee: Kaneka Corporation
    Inventors: Toshio Okuhara, Tadashi Tadokoro, Hiroaki Shiota, Takeyuki Suzuki, Minoru Isshiki
  • Publication number: 20020142177
    Abstract: An adhesive composition for bonding of semiconductor chips to their chip mounting components comprising a curable polymer composition that comprises a spherical filler having an average particle size from greater than 100 to 1,000 &mgr;m and an aspect ratio of 1 to 1.5. Semiconductor devices according to this invention are characterized in that a semiconductor chip therein is bonded to the mounting component for said chip by the aforementioned adhesive.
    Type: Application
    Filed: March 20, 2002
    Publication date: October 3, 2002
    Inventors: Kimio Yamakawa, Minoru Isshiki, Katsutoshi Mine
  • Publication number: 20020117025
    Abstract: High purity cobalt with a very few content of impurities such as copper, a method of manufacturing thereof, and high purity cobalt targets are provided. The cobalt containing impurities such as copper is dissolved in a hydrochloric acid solution, and the concentration of the hydrochloric acid of the aqueous solution of cobalt chloride is adjusted to 0.1 kmol/m3 to 3 kmol/m3. Then, cobalt is added in the aqueous solution of cobalt chloride, and an inert gas is injected into the solution with agitating, in order to convert the divalent copper ions contained in the aqueous solution of cobalt chloride to monovalent copper ions. Then, the aqueous solution of cobalt chloride is fed into a column filled up with the anion exchange resins. Cobalt is not absorbed on the anion exchange resins although the monovalent copper ions are absorbed on the anion exchange resins. Therefore, copper can be separated from the aqueous solution of cobalt chloride.
    Type: Application
    Filed: September 28, 2001
    Publication date: August 29, 2002
    Inventors: Masahito Uchikoshi, Norio Yokoyama, Tamas Kekesi, Minoru Isshiki
  • Publication number: 20020117022
    Abstract: High purity iron with a very few content of impurities such as copper, a method of manufacturing thereof, and high purity iron targets are provided. The iron containing impurities such as copper is dissolved in a hydrochloric acid solution, and the concentration of the hydrochloric acid of the aqueous solution of iron chloride is adjusted to 0.1 kmol/m3 to 6 kmol/m3. Then, iron is added in the aqueous solution of iron chloride, and an inert gas is injected into the solution with agitating, in order to convert the trivalent iron ions and divalent copper ions contained in the aqueous solution of iron chloride respectively to divalent iron ions and monovalent copper ions. Then, the aqueous solution of iron chloride is fed into a column filled up with the anion exchange resins. The divalent iron ions are not absorbed on the anion exchange resins although the monovalent copper ions are absorbed on the anion exchange resins. Therefore, copper can be separated from the aqueous solution of iron chloride.
    Type: Application
    Filed: September 28, 2001
    Publication date: August 29, 2002
    Inventors: Masahito Uchikoshi, Norio Yokoyama, Tamas Kekesi, Minoru Isshiki