Abstract: A magnetoresistive film is disclosed which has a layered structure comprising a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic conductive layer interposed between the first and second ferromagnetic layers, and an antiferromagnetic layer coupled with one of the first and second ferromagnetic layers. The antiferromagnetic layer comprises an antiferromagnetic material selected from an antimony-base alloy, fluoride, an FeRh-base alloy, FeS, an IrMnCo-base alloy and a CrAl-base alloy.

Abstract: A photon mode reaction is caused in an optical recording medium by irradiating the optical recording medium susceptible to the photon mode reaction with light emitted from a light emitting device when driven by a pulsed current.

Abstract: A magnetoresistive device has an alloy film, including a ferromagnetic substance and a non-magnetic substance which is not soluble in solid phase in the ferromagnetic substance or is in a eutectic relation with the ferromagentic substance. The ferromagnetic substance forms grains in the non-magnetic substance, and the grains preferably have anisotropic shapes. The non-magnetic substance is conducting. The alloy film is composed of a plurality of alloy film stripes. Alternatively the magneto-resistive device includes a non-magnetic layer arranged between first and second magnetic layers, wherein the non-magnetic layer has 10 to 50 weight percent of grains of a magnetic substance dispersed therein.

Abstract: A magnetoresistance effect element includes a non-magnetic substrate, a ferromagnetic dispersion layer or a ferromagnetic layer, and a non-magnetic metal film. The ferromagnetic dispersion layer is a layer of a ferromagnetic metal or alloy that is independently and dispersedly formed on the substrate. The alternative ferromagnetic layer is a layer of a ferromagnetic metal or alloy that is formed on the substrate with a textured surface. The non-magnetic metal film is made of at least one atomic element having a non-soluble relation with the ferromagnetic metal or alloy, and is formed on the non-magnetic substrate and the ferromagnetic dispersion layer or the ferromagnetic layer.

Abstract: A magnetoresistive element includes a substrate, a magnetoresistive film arranged on the substrate and prepared from a non-magnetic conductive metal film containing grains consisting of a ferromagnetic metal atom or a ferromagnetic metal alloy dispersed therein so that the grain concentration is varied along the film thickness direction, a pair of current feeding electrodes arranged on the magnetoresistive film, and a pair of voltage reading electrodes arranged on the magnetoresistive film.

Abstract: In the event of recording a picture signal for left eye and a picture signal for right eye, a picture signal for one of right and left eyes limited in band by a low pass filter as being an additional signal and a picture signal for the other eye as being a primary signal, and the additional signal together with the primary signal are recorded on recording medium.

Abstract: A magnetoresistive element includes a substrate, and a plurality of fine line structures, which are provided on the substrate to be substantially parallel to each other, and which each have an aspect ratio greater than 1. Each fine line structure has a multilayer structure of a first ferromagnetic layer, a non-magnetic conductive layer and a second ferromagnetic layer. Magnetic moments of the first and second ferromagnetic layers orient antiparallel to each other in a state with no external magnetic field being applied.

Abstract: A magnetoresistive device includes a substrate and a magnetic film which is formed by alternately stacking magnetic and non-magnetic layers with each other on the substrate. The substrate is prepared to have a texture on its surface, and the magnetic film is formed on this substrate so that a texture is formed along the interface between the magnetic and non-magnetic layers. The texture can be an atomic level texture with step features dimensioned dependent upon the lattice constant, or may be an etched texture of features having desired dimensions in a specified range.

Abstract: A magnetoresistance-effect element includes a substrate, and a magnetoresistance-effect film disposed on the substrate. The magnetoresistance-effect film includes an alloy film containing ferromagnetic metal atoms and non-magnetic metal atoms, which have the property relative to each other that they are mutually insoluble in both solid and liquid phases. The magnetoresistance-effect film further includes at least three soft magnetic films arranged as discontinuous areas in contact with the alloy film and magnetically coupled therewith for reducing an operating magnetic field strength of the element.

Abstract: A magnetoresistive film includes, arranged in the following order, a substrate, a first ferromagnetic layer, a non-magnetic metal film, and a second ferromagnetic layer which has a coercive force different from that of the first ferromagnetic layer. The magnetoresistive film has an uneven number of inflection point(s) in its magnetization hysteresis curve in the process of magnetization transition from a first saturation magnetization state to a second saturation magnetization state, with a magnetic field change quantity Hb and a magnetic field change quantity Ha being in the following relation:Ha/Hb.ltoreq.1where Ha and Hb are respectively expressed as Ha=.vertline.H.sub.2 -H.sub.0 .vertline. and Hb=.vertline.H.sub.1 -H.sub.0 .vertline., with H.sub.0, H.sub.1 and H.sub.

Abstract: A magnetic thin film head includes a soft magnetic alloy thin film having in a composition expressed by the formula Fe.sub.X N.sub.Y O.sub.Z, wherein each of X, Y and Z represents an atomic composition ratio, and preferably having four phases including an iron oxide expressed as Fe.sub.2 O.sub.3, iron nitrides expressed as Fe.sub.4 N and Fe.sub.3 N respectively, and .alpha.-Fe. X, Y and Z appearing in the composition formula are preferably in the following relations:0.005.ltoreq.Y.ltoreq.0.120.005.ltoreq.Z.ltoreq.0.

Abstract: A magnetoresistance effect element includes a non-magnetic substrate, a ferromagnetic dispersion layer or a ferromagnetic layer, and a non-magnetic metal film. The ferromagnetic dispersion layer is a layer of a ferromagnetic metal or alloy that is independently and dispersedly formed on the substrate. The alternative ferromagnetic layer is a layer of a ferromagnetic metal or alloy that is formed on the substrate with a textured surface. The non-magnetic metal film is made of at least one atomic element having a non-soluble relation with the ferromagnetic metal or alloy, and is formed on the non-magnetic substrate and the ferromagnetic dispersion layer or the ferromagnetic layer.

Abstract: An optical head device for projecting a light beam on a recording medium to record data thereon or reproduce the recorded data comprises an optical system for forming a beam spot of a specified diameter on the surface of the recording medium, and a transparent contact member disposed at a light emanating portion of the system for the recording medium to come into direct sliding contact therewith. Accordingly, when the contact member moves relative to the recording medium, the dust adhering to the surface of medium is removed by the contact member to assure a recording or reproduction operation free of errors.

Abstract: A perpendicular magnetic recording medium comprises a non-magnetic substrate having one main surface and a magnetic film of Fe-N or Fe-Co-N formed on the substrate's main surface. The magnetic film includes not only ferromagnetic phase, but also .zeta.-Fe.sub.2 N of paramagnetic phase. The magnetic film is characterized by having columnar crystal structure extending in a direction perpendicular to the substrate's main surface and perpendicular magnetic anisotropy by including .zeta.- Fe.sub.2 N.

Abstract: A magnetic recording tape making process and apparatus is disclosed. The apparatus includes a first depositing station which utilizes a the sputtering process for depositing a seed layer on a substrate with an initial incident angle of about 5.degree., and a second depositing station for depositing, over the seed layer, an extended layer with an initial incident angle of about 45.degree.. The seed layer has a thickness of about 0.01 micrometer, and is defined by young crystalline columns of magnetic material densely and perpendicularly formed on the substrate. The extended layer is defined by extended crystalline columns over the young crystalline columns through self-epitaxial growth. The completed magnetic film defined by the two layers has a high residual magnetization ratio MV/MH and also a high perpendicular coercivity Hcv.