Abstract: The present invention provides a compound having a cholinergic muscarinic M1 receptor positive allosteric modulator activity and useful as an agent for the prophylaxis or treatment of Alzheimer's disease, schizophrenia, pain, sleep disorder, Parkinson's disease dementia, dementia with Lewy bodies, and the like. The present invention relates to a compound represented by the formula (I) or a salt thereof. wherein each symbol is as described in the specification, or a salt thereof.

Abstract: An exhaust gas pipe includes: a plurality of pipe bodies which are formed in a tubular shape centered on an axis and are arranged in a direction of the axis and through which an exhaust gas led from an engine body flows; a connection portion which connects a pair of the pipe bodies adjacent to each other; and a gasket which is provided between the pipe body and the connection portion, wherein a flange projecting toward an outer peripheral side is provided a an end portion of the pipe body in the direction of the axis, wherein the connection portion includes a main connection body which has a tubular shape centered on the axis and a pressing ring which is provided with a facing surface facing the flange while sandwiching the gasket in a gap between the flange and the facing surface, and wherein the exhaust gas pipe further includes: coupling members which are provided at intervals in a circumferential direction and couple the flange and the pressing ring to each other; and a deformation prevention member that

Abstract: A developing apparatus includes an electrostatic latent image bearer, a developing sleeve, a case, and an air filter. The case accommodates a two-component developer and the developing sleeve. The air filter is attached to the case. The air filter has a thickness of 2 to 20 mm and has a density gradient with a pressure loss of 2 to 40 Pa at a wind speed of 10 cm/s. The air filter forms an airflow sucked into the case from a gap between the developing sleeve and the case and forms an airflow discharged from the case through the air filter. The two-component developer accommodated in the case contains a magnetic particle a surface of which is coated with a resin layer. The resin layer contains at least one type of chargeable particle.

Abstract: A simulation device includes a travel information acquisition unit that acquires travel information including a plurality of items relating to a travel history from an internal combustion engine vehicle equipped with an internal combustion engine, a storage device that stores reference values of suitability of a user for an electric vehicle with respect to electric power consumption, respectively, for the items, a determination unit that determines the suitability based on a comparison result between measurement values of the respective items and the reference values, and an output unit that causes an information terminal of the user to output the determined suitability.

Abstract: A processing method of a device wafer includes a mask coating step of coating a front surface of the device wafer with a water-soluble resin, a mask forming step of applying a laser beam along each division line, forming a groove, and removing a protective mask and a functional layer to expose a substrate, a plasma etching step of forming a division groove that divides the substrate along the groove by supplying a gas in a plasma condition, an expanding step of expanding a protective tape in a plane direction to expand a width of the division groove, an adhesive film dividing step of applying a laser beam along the division groove to divide the adhesive film that has been exposed due to the formation of the division groove, and a cleaning step of cleaning and removing the water-soluble resin.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. The third surface is positioned between the first surface and the second electrode layer. An electrical resistance of the first surface is greater than an average electrical resistance of the first portion.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. The third surface is positioned between the first surface and the second electrode layer. An electrical resistance of the first surface is less than an average electrical resistance of the first portion.

Abstract: A method of the invention is a method of processing a wiring substrate that includes a configuration in which conductors locally disposed on a substrate are coated with resin having inorganic members that form a filler and are dispersed in an organic member, the method including: removing the organic member from a surface layer side of the resin by use of an ashing method; and removing, by use of a wet cleaning method, the inorganic members remaining the surface layer side of the resin from which the organic member is removed.

Abstract: A processing method of a wafer includes a resist film coating step of coating either one surface of a front surface and a back surface with a resist film containing an ultraviolet absorber, a laser beam irradiation step of irradiating the side of the one surface with a laser beam absorbed by the wafer and removing part of the wafer and the resist film along planned dividing lines, a plasma etching step of supplying a gas in a plasma state to the side of the one surface and removing an exposed region of the wafer exposed along the planned dividing lines through plasma etching, and a check step of irradiating plural positions on the side of the one surface of the wafer with ultraviolet rays and detecting light emission of the resist film to measure the thickness of the resist film and check a coating state of the resist film.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. A distance between the third surface and the first major surface is constant. A thickness of the second portion between the third and fourth surfaces varies such that the thickness at a circumferential end portion of the second portion which is less than that at a central portion of the second portion.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. A distance between the fourth surface and the first major surface is constant. A thickness of the second portion between the third and fourth surfaces varies such that the thickness at a circumferential end portion of the second portion which is less than that at a central portion of the second portion.

Abstract: A wafer processing method includes applying a laser beam to division lines in a wafer to remove a passivation film laminated on the division lines and expose a semiconductor substrate along the division lines, thereafter coating a front surface of the wafer with a resin to form a protective film, and applying a laser beam to division lines to remove the protective film laminated on the division lines. Next, the semiconductor substrate is exposed along the division lines, after which the semiconductor substrate exposed along the division lines is divided by plasma etching with the protective film as a shielding film.

Abstract: An audio signal processing apparatus includes a preset setting task that receives setting of a preset that defines a parameter to be copied, a copy-source selecting task that receives a selection of a copy-source channel, a preset selecting task that receives a selection of the preset, a copy-destination selecting task that receives a selection of a copy-destination channel, and a copying task that copies the parameter of the selected preset to be copied from the copy-source channel to the copy-destination channel.

Abstract: A processing method of a device wafer includes a mask coating step of coating a front surface of the device wafer with a water-soluble resin, a mask forming step of applying a laser beam along each division line, forming a groove, and removing a protective mask and a functional layer to expose a substrate, a plasma etching step of forming a division groove that divides the substrate along the groove by supplying a gas in a plasma condition, an expanding step of expanding a protective tape in a plane direction to expand a width of the division groove, an adhesive film dividing step of applying a laser beam along the division groove to divide the adhesive film that has been exposed due to the formation of the division groove, and a cleaning step of cleaning and removing the water-soluble resin.

Abstract: The gastrostomy catheter includes a shaft in which a lumen is provided, a flexible bumper which is provided at a tip of the shaft, and a wire which has elasticity and can bias the bumper in a diameter-increasing direction and restricts deformation of the bumper in a diameter-decreasing direction. At least a portion on a tip side of the wire biases the bumper in the diameter-increasing direction or restricts the deformation of the bumper in the diameter-decreasing direction by the elasticity of the wire in a state in which the wire is disposed in the bumper.

Abstract: A processing method of a wafer includes a resist film coating step of coating either one surface of a front surface and a back surface with a resist film containing an ultraviolet absorber, a laser beam irradiation step of irradiating the side of the one surface with a laser beam absorbed by the wafer and removing part of the wafer and the resist film along planned dividing lines, a plasma etching step of supplying a gas in a plasma state to the side of the one surface and removing an exposed region of the wafer exposed along the planned dividing lines through plasma etching, and a check step of irradiating plural positions on the side of the one surface of the wafer with ultraviolet rays and detecting light emission of the resist film to measure the thickness of the resist film and check a coating state of the resist film.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. A distance between the fourth surface and the first major surface is constant. A thickness of the second portion between the third and fourth surfaces varies such that the thickness at a circumferential end portion of the second portion which is less than that at a central portion of the second portion.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. A distance between the third surface and the first major surface is constant. A thickness of the second portion between the third and fourth surfaces varies such that the thickness at a circumferential end portion of the second portion which is less than that at a central portion of the second portion.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. The third surface is positioned between the first surface and the second electrode layer. An electrical resistance of the first surface is less than an average electrical resistance of the first portion.