Abstract: An exhaust gas purification catalyst apparatus has a honeycomb base material and a catalyst noble metal supported by the honeycomb base material, wherein: the honeycomb base material contains ceria-zirconia composite oxide particles as one of the constituent materials, is of a wall flow type, and includes inlet-side cells and outlet-side cells demarcated by porous partition walls; the catalyst noble metal is supported in inlet-side support regions and outlet-side support regions; each of the inlet-side support regions is formed with a specific length from the exhaust gas flow upstream end; the catalyst noble metal 70% support depth is not greater than 50% of the thickness of the porous partition walls; each of the outlet-side support regions is formed with a specific length from the exhaust gas flow downstream end; and the catalyst noble metal 70% support depth is greater than 50% of the thickness of the porous partition walls.

Abstract: A vehicle steering handle, comprising: a steering wheel that is an isosceles trapezoidal annular body composed of an upper bottom portion, a lower bottom portion longer than the upper bottom portion, and left and right leg portions; an accelerator lever attached to the right leg portion; and a brake lever attached to the left leg portion and the right leg portion.

Abstract: A biological information measurement device includes a pulse acquisition mechanism configured to detect a pulse of a human body, a pulse interval calculation mechanism configured to calculate, based on the pulse, a pulse interval between one beat and a beat immediately before the one beat, and a display mechanism configured to display a level indicator visually indicating at least one of the pulse interval or an amount of change from another pulse interval immediately before the pulse interval. The level indicator indicates, per beat of the pulse detected, the pulse interval or the amount of change.

Abstract: A driver assistance system includes a calculation unit for calculating a cruising range as a distance at which an electric vehicle can travel with a current remaining charged amount of the electric vehicle, and an information presentation unit for displaying, on a display, a reachable range from a current position of the vehicle. The calculation unit calculates an open road cruising range in a case where an open road is used and/or an expressway cruising range in a case where an expressway is used. The information presentation unit displays an open road reach range and an expressway reach range such that an end point of the expressway reach range in a case where the expressway is used is located closer to the current position of the vehicle than an outer edge of the open road reach range in a case where the open road is used.

Abstract: A simulation device includes a travel information acquisition unit that acquires travel information including a plurality of items relating to a travel history from an internal combustion engine vehicle equipped with an internal combustion engine, a storage device that stores reference values of suitability of a user for an electric vehicle with respect to electric power consumption, respectively, for the items, a determination unit that determines the suitability based on a comparison result between measurement values of the respective items and the reference values, and an output unit that causes an information terminal of the user to output the determined suitability.

Abstract: A processing method of a device wafer includes a mask coating step of coating a front surface of the device wafer with a water-soluble resin, a mask forming step of applying a laser beam along each division line, forming a groove, and removing a protective mask and a functional layer to expose a substrate, a plasma etching step of forming a division groove that divides the substrate along the groove by supplying a gas in a plasma condition, an expanding step of expanding a protective tape in a plane direction to expand a width of the division groove, an adhesive film dividing step of applying a laser beam along the division groove to divide the adhesive film that has been exposed due to the formation of the division groove, and a cleaning step of cleaning and removing the water-soluble resin.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. The third surface is positioned between the first surface and the second electrode layer. An electrical resistance of the first surface is greater than an average electrical resistance of the first portion.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. The third surface is positioned between the first surface and the second electrode layer. An electrical resistance of the first surface is less than an average electrical resistance of the first portion.

Abstract: A method of the invention is a method of processing a wiring substrate that includes a configuration in which conductors locally disposed on a substrate are coated with resin having inorganic members that form a filler and are dispersed in an organic member, the method including: removing the organic member from a surface layer side of the resin by use of an ashing method; and removing, by use of a wet cleaning method, the inorganic members remaining the surface layer side of the resin from which the organic member is removed.

Abstract: A processing method of a wafer includes a resist film coating step of coating either one surface of a front surface and a back surface with a resist film containing an ultraviolet absorber, a laser beam irradiation step of irradiating the side of the one surface with a laser beam absorbed by the wafer and removing part of the wafer and the resist film along planned dividing lines, a plasma etching step of supplying a gas in a plasma state to the side of the one surface and removing an exposed region of the wafer exposed along the planned dividing lines through plasma etching, and a check step of irradiating plural positions on the side of the one surface of the wafer with ultraviolet rays and detecting light emission of the resist film to measure the thickness of the resist film and check a coating state of the resist film.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. A distance between the third surface and the first major surface is constant. A thickness of the second portion between the third and fourth surfaces varies such that the thickness at a circumferential end portion of the second portion which is less than that at a central portion of the second portion.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. A distance between the fourth surface and the first major surface is constant. A thickness of the second portion between the third and fourth surfaces varies such that the thickness at a circumferential end portion of the second portion which is less than that at a central portion of the second portion.

Abstract: A wafer processing method includes applying a laser beam to division lines in a wafer to remove a passivation film laminated on the division lines and expose a semiconductor substrate along the division lines, thereafter coating a front surface of the wafer with a resin to form a protective film, and applying a laser beam to division lines to remove the protective film laminated on the division lines. Next, the semiconductor substrate is exposed along the division lines, after which the semiconductor substrate exposed along the division lines is divided by plasma etching with the protective film as a shielding film.

Abstract: An audio signal processing apparatus includes a preset setting task that receives setting of a preset that defines a parameter to be copied, a copy-source selecting task that receives a selection of a copy-source channel, a preset selecting task that receives a selection of the preset, a copy-destination selecting task that receives a selection of a copy-destination channel, and a copying task that copies the parameter of the selected preset to be copied from the copy-source channel to the copy-destination channel.

Abstract: A processing method of a device wafer includes a mask coating step of coating a front surface of the device wafer with a water-soluble resin, a mask forming step of applying a laser beam along each division line, forming a groove, and removing a protective mask and a functional layer to expose a substrate, a plasma etching step of forming a division groove that divides the substrate along the groove by supplying a gas in a plasma condition, an expanding step of expanding a protective tape in a plane direction to expand a width of the division groove, an adhesive film dividing step of applying a laser beam along the division groove to divide the adhesive film that has been exposed due to the formation of the division groove, and a cleaning step of cleaning and removing the water-soluble resin.

Abstract: The gastrostomy catheter includes a shaft in which a lumen is provided, a flexible bumper which is provided at a tip of the shaft, and a wire which has elasticity and can bias the bumper in a diameter-increasing direction and restricts deformation of the bumper in a diameter-decreasing direction. At least a portion on a tip side of the wire biases the bumper in the diameter-increasing direction or restricts the deformation of the bumper in the diameter-decreasing direction by the elasticity of the wire in a state in which the wire is disposed in the bumper.

Abstract: A processing method of a wafer includes a resist film coating step of coating either one surface of a front surface and a back surface with a resist film containing an ultraviolet absorber, a laser beam irradiation step of irradiating the side of the one surface with a laser beam absorbed by the wafer and removing part of the wafer and the resist film along planned dividing lines, a plasma etching step of supplying a gas in a plasma state to the side of the one surface and removing an exposed region of the wafer exposed along the planned dividing lines through plasma etching, and a check step of irradiating plural positions on the side of the one surface of the wafer with ultraviolet rays and detecting light emission of the resist film to measure the thickness of the resist film and check a coating state of the resist film.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. The third surface is positioned between the first surface and the second electrode layer. An electrical resistance of the first surface is less than an average electrical resistance of the first portion.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. A distance between the third surface and the first major surface is constant. A thickness of the second portion between the third and fourth surfaces varies such that the thickness at a circumferential end portion of the second portion which is less than that at a central portion of the second portion.