Abstract: According to one embodiment, a photosensitive composition includes a great number of photosensitive core-shell type nano-particles each including a core and a shell and having a structure that the core is metal oxide particle and covered by the shell. The shell includes a) unsaturated carboxylic acid or unsaturated carboxylate, which is a negatively ionized unsaturated carboxylic acid, and b) silylated unsaturated carboxylic acid or unsaturated carboxylate which is negatively ionized silylated unsaturated carboxylic acid.

Abstract: According to one embodiment, a photosensitive composition includes a great number of photosensitive core-shell type nano-particles each including a core and a shell and having a structure that the core is metal oxide particle and covered by the shell. The shell includes a) unsaturated carboxylic acid or unsaturated carboxylate, which is a negatively ionized unsaturated carboxylic acid, and b) silylated unsaturated carboxylic acid or unsaturated carboxylate which is negatively ionized silylated unsaturated carboxylic acid.

Abstract: The present invention relates to a photosensitive composition, which is capable of being irradiated with high energy beam having a wave length of 1 to 300 nm band. The photosensitive composition includes a binder resin; and a photoelectron absorbent, capable of being excited with photoelectron emitted from the binder resin that absorbs the high energy beam, when the binder resin is irradiated with the high energy beam.

Abstract: The present invention relates to a photosensitive composition, which is capable of being irradiated with high energy beam having a wave length of 1 to 300 nm band. The photosensitive composition includes a binder resin; and a photoelectron absorbent, capable of being excited with photoelectron emitted from the binder resin that absorbs the high energy beam, when the binder resin is irradiated with the high energy beam.

Abstract: There is provided a process for preparing a fluorine-containing polymer for resist which is excellent in transparency in a vacuum ultraviolet region, comprises a structural unit derived from a fluorine-containing ethylenic monomer and/or a structural unit derived from a monomer which can provide an aliphatic ring structure in the polymer trunk chain and may have a fluorine atom, and has an acid-reactive group Y1 reacting with an acid or a group Y2 which can be converted to the acid-reactive group Y1, in which the fluorine-containing ethylenic monomer and/or the monomer which can provide an aliphatic ring structure in the polymer trunk chain are subjected to radical polymerization by using an organic peroxide represented by the formula (1): wherein R50 and R51 are the same or different and each is a hydrocarbon group having 1 to 30 carbon atoms which may have ether bond (an atom at an end of bond is not oxygen atom); p1 and p2 are the same or different and each is 0 or 1; p3 is 1 or 2, and also there is pr

Abstract: There is provided a method of forming, on a substrate, a fine resist pattern comprising a step for forming a photosensitive layer by using a photo-sensitive composition comprising at least a compound generating an acid by irradiation of light and a fluorine-containing polymer,

Abstract: There is provided a method of forming a fine resist pattern in which a highly practicable photosensitive composition obtained from a material having a high transparency against an exposure light having a short wavelength such as F2 excimer laser beam is used as a resist.

Abstract: A resist composition comprises: at least one type of a first compound having two or more intramolecular adamantyl structures represented by the chemical formula 1 below; a base resin; and a second compound which generates an acid by active beam irradiation. wherein X is —(OCO)m—(CH2)n—(COO)m—, where m=0 or 1 and n=0, 1, 2 or 3 provided when n=0, m=0; and Y and Z are H, OH, F, Cl, Br, R or COOR, where Y may be Z, or Y and Z may be introduced in a single adamantyl structure and R represents a straight or branched alkyl group having 1 to 8 carbon atoms.

Abstract: There is provided a method of forming a fine resist pattern in which a highly practicable photo-sensitive composition obtained from a material having a high transparency against an exposure light having a short wavelength such as F2 excimer laser beam is used as a resist, and the method of forming a fine resist pattern comprises a step for forming a photo-sensitive layer on a substrate or on a given layer on a substrate using a photo-sensitive composition comprising at least a compound generating an acid by irradiation of light and a compound having fluorine atom in its molecular structure, a step for exposing by selectively irradiating a given area of said photo-sensitive layer with energy ray, a step for heat-treating the exposed photo-sensitive layer, and a step for forming a fine pattern by developing the heat-treated photo-sensitive layer to selectively remove the exposed portion or un-exposed portion of the photo-sensitive layer.

Abstract: A composition for anti-reflective coatings comprising a polymer that contains fluorine and a solvent that dissolves the polymer is applied onto a semiconductor substrate to form an anti-reflective coating. Next, a resist film containing fluorine is formed on the anti-reflective coating. Then, the resist film is irradiated by exposure light to form resist patterns.

Abstract: A resist composition comprises: at least one type of a first compound having two or more intramolecular adamantyl structures represented by the chemical formula 1 below; a base resin; and a second compound which generates an acid by active beam irradiation.

Abstract: Disclosed is a pattern forming method including the steps of preparing second grating stripes disposed near a reticle having a mask pattern to be projected, modulating the mask pattern by emission of a light, and demodulating the modulated mask pattern by first grating stripes formed within a photosensitive film made of a material capable of reversibly inducing photochemical reaction, thereby forming the modulated image of the mask pattern within a resist film disposed under the photosensitive film. With this method, various kinds of fine patterns each being smaller than the resolution limit of a projection exposure tool used are formed.

Abstract: In forming a thin film pattern, first a seed material film is formed on a substrate and then exposed using electron beam lithography, for example, in the shape of the pattern. The latent image is then removed and an oriented material is deposited on one of the seed material and the substrtate, which have different hydrophilicity properties, to form the pattern. The oriented film is formed by an LB film forming method, in one example, and in another example the LB film material is a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20%.

Abstract: A photosensitive composition comprising (a) a photosensitive component such as an aromatic diazo compound or an aromatic azide, (b) a polymer and (c) a quaternary alkylammonium salt wherein each straight- or branched-chain alkyl group has 1 to 7 carbon atoms is suitable for producing a positive type or negative type photresist excellent in contrast and sensitivity in the microlithography of semiconductor elements.