Abstract: A method for high-fidelity fine patterning of a photoresist layer involving a dry-process development by exposure to a plasma gas. Following irradiation in a pattern with actinic rays, a photoresist layer coated on a substrate is heated in an atmosphere at 200.degree. to 500.degree. C. Subsequent exposure of the photoresist layer to a plasma gas gives a finely patterned resist layer with a very high residual film ratio or very small decrease in the film thickness.

Abstract: A composition for ultra-fine pattern formation comprising at least one of acrylic and/or vinyl ketone polymers as the major component and an effective amount of an aromatic azide compound and, in another embodiment, further comprising an effective amount of an organic compound having a vinyl group, and a process for ultra-fine pattern formation therewith. In the process, a required area of a film formed from the composition is irradiated with a corpuscular beam or with electromagnetic wave radiation. The aromatic azide compound or a mixture thereof with the aromatic compound having a vinyl group only in the unexposed areas is subjected to a deactivation treatment within the film, and the unexposed areas of the film are removed with a gas plasma to form an ultra-fine pattern. The composition is suitable for use in the ultra-fine pattern formation of a resist for transistors, integrated circuits (IC), large scale integrated circuits (LSI) or the like in the semiconductor industry.

Abstract: The present invention relates to a method for forming ultra fine patterns on films of polymethyl isopropenyl ketone or a mixture of polymethyl isopropenyl ketone and a benzophenone compound by exposing such films to ultra violet rays in the range of from 1,000 to 3,500 A. The present invention is particularly useful for providing semiconductors having ultra fine patterns and ultra LSI's. The electric or electronic circuits for electronic or electric apparatus and equipment have been produced by wiring resistors, condensers, coils, vacuum tubes and the like necessary components. However, because of various disadvantages such as assembly requiring much time, complication of work, necessity of using large equipment, reasons or causes for errors, limitation of productivity, impossibility of reducing price or cost and the like, the present invention has been developed for printed circuit boards.

Abstract: The present invention relates to a method for forming ultra fine patterns on films of polymethyl isopropenyl ketone or a mixture of polymethyl isopropenyl ketone and a benzophenone compound by exposing such films to ultra violet rays in the range of from 1,000 to 3,500 A. The present invention is particularly useful for providing semiconductors having ultra fine patterns and ultra LSI's. The electric or electronic circuits for electronic or electric apparatus and equipment have been produced by wiring resistors, condensers, coils, vacuum tubes and the like necessary components. However, because of various disadvantages such as assembly requiring much time, complication of work, necessity of using large equipment, reasons or causes for errors, limitation of productivity, impossibility of reducing price or cost and the like, the present invention has been developed for printed circuit boards.

Abstract: A sensitive composition comprising polymethyl isopropenyl ketone of limited molecular weight and a compound of a given general formula. The formation of a pattern of less than 1 .mu.m is made possible by employing ultraviolet rays of wave lengths of 100-350 nm in place of those of 350-450 nm utilized in conventional processes. The sensitive composition is highly sensitive to ultraviolet rays in said wave range and reproduces a fine pattern precisely.