Abstract: Precursors and related methods are provided. A precursor comprises a cyclosilazane compound. The cyclosilazane compound is a reaction product of an aminosilane and a halosilane. A method for forming the precursor comprises obtaining an aminosilane, obtaining a halosilane, and contacting the aminosilane and the halosilane to obtain the precursor. A method for forming a silicon-containing film using the precursor is also provided, among other embodiments.

Abstract: A composition comprises a disilylamine precursor. The disilylamine precursor comprises a functional group attached to a nitrogen atom of the dilsilylamine precursor. The functional group comprises an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl. Related methods are provided, including a method for forming the disilylamine precursor and a method for vapor deposition.

Abstract: Silane precursors and related methods are provided. A method for preparing a silane precursor may comprise one or more of the following steps: contacting a dihalide silane compound and an amine in a first solvent to obtain a first reaction product; and contacting the first reaction product and a reductant in a second solvent to obtain a second reaction product.

Abstract: Some embodiments relate to a precursor comprising a precursor for vapor deposition. The precursor comprises an aliphatic hydrocarbon and at least one disilylamine group. The at least one disilylamine group is attached to the aliphatic hydrocarbon. The at least one disilylamine group does not comprise a silanide group. Some embodiments relate to a method for making the precursor. The method comprises reacting a polyamine compound and a silylhalide compound in a presence of a base to form a precursor useful for vapor deposition. Some embodiments relate to a method for forming a silicon-containing film using the precursor.

Abstract: Some embodiments relate to a precursor comprising a precursor for vapor deposition. The precursor comprises an aliphatic hydrocarbon and at least one disilylamine group. The at least one disilylamine group is attached to the aliphatic hydrocarbon. The at least one disilylamine group does not comprise a silanide group. Some embodiments relate to a method for making the precursor. The method comprises reacting a polyamine compound and a silylhalide compound in a presence of a base to form a precursor useful for vapor deposition. Some embodiments relate to a method for forming a silicon-containing film using the precursor.

Abstract: Provided are certain silyl amine compounds useful as precursors in the vapor deposition of silicon-containing materials onto the surfaces of microelectronic devices. Such precursors can be utilized with optional co-reactants to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.