Patents by Inventor MinSeok Ryu

MinSeok Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240247010
    Abstract: Precursors and related methods are provided. A precursor comprises a cyclosilazane compound. The cyclosilazane compound is a reaction product of an aminosilane and a halosilane. A method for forming the precursor comprises obtaining an aminosilane, obtaining a halosilane, and contacting the aminosilane and the halosilane to obtain the precursor. A method for forming a silicon-containing film using the precursor is also provided, among other embodiments.
    Type: Application
    Filed: January 15, 2024
    Publication date: July 25, 2024
    Inventors: DaHye Kim, YeRim Yeon, SangJin Lee, MinSeok Ryu, SeongCheol Kim
  • Publication number: 20240182498
    Abstract: A composition comprises a disilylamine precursor. The disilylamine precursor comprises a functional group attached to a nitrogen atom of the dilsilylamine precursor. The functional group comprises an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl. Related methods are provided, including a method for forming the disilylamine precursor and a method for vapor deposition.
    Type: Application
    Filed: November 17, 2023
    Publication date: June 6, 2024
    Inventors: SeongCheol Kim, YeRim Yeon, SangJin Lee, DaHye Kim, MinSeok Ryu, KieJin Park
  • Publication number: 20240150380
    Abstract: Silane precursors and related methods are provided. A method for preparing a silane precursor may comprise one or more of the following steps: contacting a dihalide silane compound and an amine in a first solvent to obtain a first reaction product; and contacting the first reaction product and a reductant in a second solvent to obtain a second reaction product.
    Type: Application
    Filed: October 18, 2023
    Publication date: May 9, 2024
    Inventors: MinSeok Ryu, SangJin Lee, YeRim Yeon, SeongCheol Kim, KieJin Park
  • Publication number: 20240101583
    Abstract: Some embodiments relate to a precursor comprising a precursor for vapor deposition. The precursor comprises an aliphatic hydrocarbon and at least one disilylamine group. The at least one disilylamine group is attached to the aliphatic hydrocarbon. The at least one disilylamine group does not comprise a silanide group. Some embodiments relate to a method for making the precursor. The method comprises reacting a polyamine compound and a silylhalide compound in a presence of a base to form a precursor useful for vapor deposition. Some embodiments relate to a method for forming a silicon-containing film using the precursor.
    Type: Application
    Filed: November 15, 2023
    Publication date: March 28, 2024
    Inventors: MinSeok Ryu, YeRim Yeon, JoongKi Choi, JongWon Nam, Sangbum Han
  • Publication number: 20230193462
    Abstract: Some embodiments relate to a precursor comprising a precursor for vapor deposition. The precursor comprises an aliphatic hydrocarbon and at least one disilylamine group. The at least one disilylamine group is attached to the aliphatic hydrocarbon. The at least one disilylamine group does not comprise a silanide group. Some embodiments relate to a method for making the precursor. The method comprises reacting a polyamine compound and a silylhalide compound in a presence of a base to form a precursor useful for vapor deposition. Some embodiments relate to a method for forming a silicon-containing film using the precursor.
    Type: Application
    Filed: December 15, 2022
    Publication date: June 22, 2023
    Inventors: MinSeok Ryu, SangJin Lee, SeongCheol Kim, YeRim Yeon, YoonHae Kim, KieJin Park
  • Publication number: 20230088079
    Abstract: Provided are certain silyl amine compounds useful as precursors in the vapor deposition of silicon-containing materials onto the surfaces of microelectronic devices. Such precursors can be utilized with optional co-reactants to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.
    Type: Application
    Filed: July 8, 2022
    Publication date: March 23, 2023
    Inventors: SangJin Lee, MinSeok Ryu, Sangbum Han, SeongCheol Kim, YoonHae Kim, KieJin Park, YeRim Yeon, Sungsil Cho, HwanSoo Kim, JoongKi CHOI