Abstract: A semiconductor package includes a lower chip including a first lower bonding pad and a second lower bonding pad, and an upper chip disposed on the lower chip, the upper chip including a first upper bonding pad and a second upper bonding pad respectively hybrid-bonded together. The first lower and upper bonding pads have a first shape in which first and second axis lengths are the same, and are disposed in a first center region of the chips. The second lower and upper bonding pads have a second shape in which third and fourth axis lengths differ, and are disposed in a first edge region which is near a corner point of the chip. In the second lower and upper bonding pads disposed in the first edge region, the third axis length is arranged in a direction perpendicular to a radial direction from the center point.

Abstract: A semiconductor package includes a first sub-semiconductor device, an interposer, and a second sub-semiconductor device stacked on each other, and a heat sink covering the second sub-semiconductor device. The first sub-semiconductor device includes a first substrate and a first semiconductor chip. The interposer includes a dielectric layer, a thermal conductive layer in contact with a bottom surface of the dielectric layer, a first thermal conductive pad in contact with a top surface of the dielectric layer, and thermal conductive vias penetrating the dielectric layer to connect the thermal conductive layer to the first thermal conductive pad. A bottom surface of the thermal conductive layer is adjacent to and connected to a top surface of the first semiconductor chip. The second sub-semiconductor device is disposed on the dielectric layer without overlapping the first thermal conductive pad. The heat sink further covers the first thermal conductive pad to be connected thereto.

Abstract: A lower semiconductor package of a package-on-package type semiconductor package includes: a package substrate; a semiconductor chip mounted on the package substrate; a chip connecting terminal disposed between the semiconductor chip and the package substrate and configured to connect the semiconductor chip to the package substrate; conductive pillars arranged on the package substrate to at least partially surround the semiconductor chip; and a dam structure configured to cover the conductive pillars on the package substrate and having a first opening at least partially surrounding the semiconductor chip.

Abstract: A semiconductor package includes a first sub-semiconductor device, an interposer, and a second sub-semiconductor device stacked on each other, and a heat sink covering the second sub-semiconductor device. The first sub-semiconductor device includes a first substrate and a first semiconductor chip. The interposer includes a dielectric layer, a thermal conductive layer in contact with a bottom surface of the dielectric layer, a first thermal conductive pad in contact with a top surface of the dielectric layer, and thermal conductive vias penetrating the dielectric layer to connect the thermal conductive layer to the first thermal conductive pad. A bottom surface of the thermal conductive layer is adjacent to and connected to a top surface of the first semiconductor chip. The second sub-semiconductor device is disposed on the dielectric layer without overlapping the first thermal conductive pad. The heat sink further covers the first thermal conductive pad to be connected thereto.

Abstract: A lower semiconductor package of a package-on-package type semiconductor package includes: a package substrate; a semiconductor chip mounted on the package substrate; a chip connecting terminal disposed between the semiconductor chip and the package substrate and configured to connect the semiconductor chip to the package substrate; conductive pillars arranged on the package substrate to at least partially surround the semiconductor chip; and a dam structure configured to cover the conductive pillars on the package substrate and having a first opening at least partially surrounding the semiconductor chip.

Abstract: A semiconductor package includes a first sub-semiconductor device, an interposer, and a second sub-semiconductor device stacked on each other, and a heat sink covering the second sub-semiconductor device. The first sub-semiconductor device includes a first substrate and a first semiconductor chip. The interposer includes a dielectric layer, a thermal conductive layer in contact with a bottom surface of the dielectric layer, a first thermal conductive pad in contact with a top surface of the dielectric layer, and thermal conductive vias penetrating the dielectric layer to connect the thermal conductive layer to the first thermal conductive pad. A bottom surface of the thermal conductive layer is adjacent to and connected to a top surface of the first semiconductor chip. The second sub-semiconductor device is disposed on the dielectric layer without overlapping the first thermal conductive pad. The heat sink further covers the first thermal conductive pad to be connected thereto.