Abstract: In one general aspect, a power semiconductor device can include a semiconductor substrate of a first conductivity type, and a semiconductor layer of a second conductivity type disposed on the semiconductor substrate. The semiconductor layer can include a high voltage unit, a low voltage unit disposed around the high voltage unit, and a level shift unit disposed between the high voltage unit and the low voltage unit. The power semiconductor device can include a first isolation region of the first conductivity type disposed between the high voltage unit and the level shift unit, and a second isolation region of the first conductivity type disposed between the low voltage unit and the level shift unit where the first isolation region and the second isolation region each are vertically aligned in the semiconductor layer and each extends to at least the semiconductor substrate.

Abstract: In one general aspect, a power semiconductor device can include a semiconductor substrate of a first conductivity type, and a semiconductor layer of a second conductivity type disposed on the semiconductor substrate. The semiconductor layer can include a high voltage unit, a low voltage unit disposed around the high voltage unit, and a level shift unit disposed between the high voltage unit and the low voltage unit. The power semiconductor device can include a first isolation region of the first conductivity type disposed between the high voltage unit and the level shift unit, and a second isolation region of the first conductivity type disposed between the low voltage unit and the level shift unit where the first isolation region and the second isolation region each are vertically aligned in the semiconductor layer and each extends to at least the semiconductor substrate.

Abstract: Provided are a high voltage semiconductor device in which a field shaping layer is formed on the entire surface of a semiconductor substrate and a method of fabricating the same. Specifically, the high voltage semiconductor device includes a first conductivity-type semiconductor substrate. A second conductivity-type semiconductor layer is disposed on a surface of the semiconductor substrate, and a first conductivity-type body region is formed in semiconductor layer. A second conductivity-type source region is formed in the body region. A drain region is formed in the semiconductor layer and is separated from the body region. The field shaping layer is formed on the entire surface of the semiconductor layer facing the semiconductor layer.

Abstract: Provided are a high voltage semiconductor device in which a field shaping layer is formed on the entire surface of a semiconductor substrate and a method of fabricating the same. Specifically, the high voltage semiconductor device includes a first conductivity-type semiconductor substrate. A second conductivity-type semiconductor layer is disposed on a surface of the semiconductor substrate, and a first conductivity-type body region is formed in semiconductor layer. A second conductivity-type source region is formed in the body region. A drain region is formed in the semiconductor layer and is separated from the body region. The field shaping layer is formed on the entire surface of the semiconductor layer facing the semiconductor layer.

Abstract: A mobile terminal is provided including a battery, an output unit, a memory, and a controller. The battery provides power. The output unit outputs a wireless recharge state. The memory stores recharge menus and recharge menu settings. The controller provides recharge menus for wireless recharging of the battery based on whether payment is required for the wireless recharging. The controller also performs a wireless recharging operation according to selection of the recharge menu settings.

Abstract: The present invention relates to a method of preparing a heteropoly acid catalyst used for the production of methacrylic acid by gas phase oxidation of methacrolein, more precisely a method of preparing a heteropoly acid catalyst comprising the steps of preparing a slurry by adding metal precursors and ammonium salt to protonic acid Keggin-type heteropoly acid aqueous solution and stirring thereof; and drying, molding and firing the slurry to give a catalyst. The present invention provides a method of preparing a heteropoly acid catalyst exhibiting high methacrolein conversion rate and methacrylic acid selectivity without pre-firing process by using high purity protonic acid Keggin-type heteropoly acid and ammonium salt.

Abstract: The present invention relates to a heteropoly acid catalyst which is used for the production of methacrylic acid by gas phase oxidation of methacrolein and a preparing method thereof. The present invention, thereby, provides a novel heteropoly acid catalyst having excellent methacrolein conversion rate, methacrylic acid selectivity and yield.

Abstract: Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.

Abstract: Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.

Abstract: Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.

Abstract: Provided are a high-voltage semiconductor device including a junction termination which electrically isolates a low voltage unit from a high voltage unit, and a method of fabricating the same. The high voltage semiconductor device includes a high voltage unit, a low voltage unit surrounding the high voltage unit, and a junction termination formed between the high voltage unit and the low voltage unit and surrounding the high voltage unit to electrically isolate the high voltage unit from the low voltage unit. The junction termination includes at least one level shifter which level shifts signals from the low voltage unit and supplies the same to the high voltage unit, a first device isolation region surrounding the high voltage unit to electrically isolate the high voltage unit from the level shifter, and a resistor layer electrically connecting neighboring level shifters.

Abstract: The present invention relates to a method of preparing a heteropoly acid catalyst used for the production of methacrylic acid by gas phase oxidation of methacrolein, more precisely a method of preparing a heteropoly acid catalyst comprising the steps of preparing a slurry by adding metal precursors and ammonium salt to protonic acid Keggin-type heteropoly acid aqueous solution and stirring thereof; and drying, molding and firing the slurry to give a catalyst. The present invention provides a method of preparing a heteropoly acid catalyst exhibiting high methacrolein conversion rate and methacrylic acid selectivity without pre-firing process by using high purity protonic acid Keggin-type heteropoly acid and ammonium salt.

Abstract: The present invention relates to a heteropoly acid catalyst which is used for the production of methacrylic acid by gas phase oxidation of methacrolein and a preparing method thereof. The present invention, thereby, provides a novel heteropoly acid catalyst having excellent methacrolein conversion rate, methacrylic acid selectivity and yield.

Abstract: Provided are a high voltage semiconductor device in which a field shaping layer is formed on the entire surface of a semiconductor substrate and a method of fabricating the same. Specifically, the high voltage semiconductor device includes a first conductivity-type semiconductor substrate. A second conductivity-type semiconductor layer is disposed on a surface of the semiconductor substrate, and a first conductivity-type body region is formed in semiconductor layer. A second conductivity-type source region is formed in the body region. A drain region is formed in the semiconductor layer and is separated from the body region. The field shaping layer is formed on the entire surface of the semiconductor layer facing the semiconductor layer.

Abstract: This disclosure relates to an apparatus and a method for making or baking a fluorescent lamp. An apparatus for baking a fluorescent lamp includes a heater to heat a plurality of quartz tubes. Each tube has a fluorescent lamp provided therein. A plurality of rollers rotates the quartz tubes placed thereon, and a transfer block has a plurality of auxiliary rollers. The transfer block is configured to move in a first direction to transfer the plurality of quartz tubes from the plurality of rotating rollers to the plurality of auxiliary rollers. A process for heating at least one fluorescent lamp includes a step of providing a plurality of quartz tubes on a plurality of rotating rollers, at least one quartz tube having a fluorescent lamp provided therein, heating the plurality of quartz tubes while being rotated on the plurality of rollers, and transferring the plurality of quartz tube using a transfer block having a plurality of auxiliary rollers.

Abstract: Provided are a high-voltage semiconductor device including a junction termination which electrically isolates a low voltage unit from a high voltage unit, and a method of fabricating the same. The high voltage semiconductor device includes a high voltage unit, a low voltage unit surrounding the high voltage unit, and a junction termination formed between the high voltage unit and the low voltage unit and surrounding the high voltage unit to electrically isolate the high voltage unit from the low voltage unit. The junction termination includes at least one level shifter which level shifts signals from the low voltage unit and supplies the same to the high voltage unit, a first device isolation region surrounding the high voltage unit to electrically isolate the high voltage unit from the level shifter, and a resistor layer electrically connecting neighboring level shifters.

Abstract: A mobile terminal is provided including a battery, an output unit, a memory, and a controller. The battery provides power. The output unit outputs a wireless recharge state. The memory stores recharge menus and recharge menu settings. The controller provides recharge menus for wireless recharging of the battery based on whether payment is required for the wireless recharging. The controller also performs a wireless recharging operation according to selection of the recharge menu settings.