Abstract: An image sensor includes an upper chip having a pixel array connected to a first connecting structure, and a lower chip below the upper chip and having a second connecting structure connected to the first connecting structure and having first and second stacked metal layers with a same thickness, a third metal layer on the second metal layer and thicker than the second metal layer, a fourth metal layer on the third metal layer and thicker than the third metal layer, first through third insulating layers alternating with the first through fourth metal layers, a first memory device with a first MTJ element in at least one of the first and second insulating layers, and a second memory device with a second MTJ element different from the first MTJ element, the second MTJ element being in at least one of the first through third insulating layers.

Abstract: Disclosed is an image sensor including a pixel array including a plurality of pixels, each of the pixels including a first photodiode and a second photodiode, each of which outputs a first pixel signal based on a first conversion gain using the second photodiode in a first period, outputs a second pixel signal based on a second conversion gain using the second photodiode in a second period, outputs a third pixel signal based on the first conversion gain using the first photodiode in a third period, and outputs a fourth pixel signal based on the second conversion gain using the first photodiode in a fourth period, an ADC circuit that performs sampling on a reset signal and an image signal of each of the first to fourth pixel signal. A sampling count and the number of sampling bits are adjusted differently from each of the first to fourth period.

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

Abstract: A time of flight (TOF) camera device and a method of operating the same is provided. The time of flight (TOF) camera device includes a pulse generator configured to generate a pulse signal, a light module configured to emit output light to at least one object in response to the pulse signal, a three-dimensional (3D) sensor configured to receive reflected light when the output light is reflected by the at least one object for a first frame, a distance calculator configured to receive an output of the 3D sensor and generate a distance data signal, and a light density control device configured to receive the distance data signal from the distance calculator and output a light density control signal. The light density control signal may adjust the size of an opening in the light module to change a projected area from the output light onto the at least one object.

Abstract: An imaging device is described which, in some examples, includes general pixels and phase difference pixels. The general pixels, when operated by control signals, receive light from a subject and generate currents or voltages that are measured; a depth is estimated based on the measurements. The phase difference pixels generate currents based on a switched charge source. Data obtained from the currents generated by the phase difference pixels is used to adjust the control signals and thereby improve an accuracy of the depth estimation.

Abstract: An electronic device includes a time of flight (ToF) sensor including a pixel array, a light source that emits light signals, and an optical device that projects the light signals to areas of an object which respectively correspond to a plurality of pixel blocks including pixels of the pixel array. Each of the pixels includes a plurality of taps each including a photo transistor, a first transfer transistor connected with the photo transistor, a storage element connected with the first transfer transistor, a second transfer transistor connected with the storage element, a floating diffusion area connected with the second transfer transistor, and a readout circuit connected with the floating diffusion area. An overflow transistor is disposed adjacent to the photo transistor and connected with a power supply voltage.

Abstract: An imaging device is described which, in some examples, includes general pixels and phase difference pixels. The general pixels, when operated by control signals, receive light from a subject and generate currents or voltages that are measured; a depth is estimated based on the measurements. The phase difference pixels generate currents based on a switched charge source. Data obtained from the currents generated by the phase difference pixels is used to adjust the control signals and thereby improve an accuracy of the depth estimation.

Abstract: An image sensor includes a plurality of pixels and photo gate controller circuitry. Each pixel may transmit a pixel signal, corresponding to a photoelectric signal, in response to a photo gate signal in a frame. The photo gate controller circuitry may generate photo gate signals and transmit photo gate signals to the pixels. The photo gate controller circuitry includes a first delay circuit configured to transmit first delay clock signals each being delayed with respect to a reference clock signal by a certain amount of time and a second delay circuit configured to transmit second delay clock signals each being delayed with respect to the reference clock signal by a certain amount of time. The pixels are each configured to selectively receive signals, as the photo gate signals, among the delay clock signals output from the first delay circuit and the delay clock signals output from the second delay circuit.

Abstract: An imaging device is described which, in some examples, includes general pixels and phase difference pixels. The general pixels, when operated by control signals, receive light from a subject and generate currents or voltages that are measured; a depth is estimated based on the measurements. The phase difference pixels generate currents based on a switched charge source. Data obtained from the currents generated by the phase difference pixels is used to adjust the control signals and thereby improve an accuracy of the depth estimation.

Abstract: A time of flight (ToF) sensor includes: a first pixel including a first photogate to receive light reflected by an object and generate a first phase signal, and a second photogate to generate a second phase signal having a phase difference of 180 degrees with respect to the first phase signal; a second pixel including a third photogate to receive the reflected light and generate a third phase signal different from the first phase signal and a fourth photogate to generate a fourth phase signal having a phase difference of 180 degrees with respect to the third phase signal; a first signal output unit to output the first and second phase signals; and a second signal output unit to output the third and fourth phase signals, wherein the first, second, third and fourth photogates output the first to fourth phase signals during a frame period.

Abstract: A time of flight (ToF) sensor includes: a first pixel including a first photogate to receive light reflected by an object and generate a first phase signal, and a second photogate to generate a second phase signal having a phase difference of 180 degrees with respect to the first phase signal; a second pixel including a third photogate to receive the reflected light and generate a third phase signal different from the first phase signal and a fourth photogate to generate a fourth phase signal having a phase difference of 180 degrees with respect to the third phase signal; a first signal output unit to output the first and second phase signals; and a second signal output unit to output the third and fourth phase signals, wherein the first, second, third and fourth photogates output the first to fourth phase signals during a frame period.

Abstract: A time of flight (TOF) camera device and a method of operating the same is provided. The time of flight (TOF) camera device includes a pulse generator configured to generate a pulse signal, a light module configured to emit output light to at least one object in response to the pulse signal, a three-dimensional (3D) sensor configured to receive reflected light when the output light is reflected by the at least one object for a first frame, a distance calculator configured to receive an output of the 3D sensor and generate a distance data signal, and a light density control device configured to receive the distance data signal from the distance calculator and output a light density control signal. The light density control signal may adjust the size of an opening in the light module to change a projected area from the output light onto the at least one object.

Abstract: An image sensor includes an upper chip having a pixel array connected to a first connecting structure, and a lower chip below the upper chip and having a second connecting structure connected to the first connecting structure and having first and second stacked metal layers with a same thickness, a third metal layer on the second metal layer and thicker than the second metal layer, a fourth metal layer on the third metal layer and thicker than the third metal layer, first through third insulating layers alternating with the first through fourth metal layers, a first memory device with a first MTJ element in at least one of the first and second insulating layers, and a second memory device with a second MTJ element different from the first MTJ element, the second MTJ element being in at least one of the first through third insulating layers.

Abstract: An image sensor including a variable resistance element is provided. The image sensor comprises first and second chips having first and second connecting structures; and a contact plug connecting the first and second chips. The first chip includes a photoelectric conversion element. The second chip includes a first variable resistance element. The contact plug extends from the first surface of the first semiconductor substrate to connect the first and second connecting structures.

Abstract: Image sensors and methods of operating the image sensors are provided. The image sensors may include a pixel configured to generate an image signal in response to light incident on the pixel. The pixel may include a charge collection circuit configured to collect charges, which are produced by the light incident on the pixel, during a sensing period and a floating diffusion region. The image sensor may further include a storage unit configured to store the charges and, during a transfer period after the sensing period, configured to transfer at least a portion of the charges to the floating diffusion region. An amount of charges that is transferred from the storage unit to the floating diffusion region may be controlled by a voltage level of a storage control signal that is applied to a storage control terminal of the storage unit.

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

Abstract: An electronic device includes a time of flight (ToF) sensor including a pixel array, a light source that emits light signals, and an optical device that projects the light signals to areas of an object which respectively correspond to a plurality of pixel blocks including pixels of the pixel array. Each of the pixels includes a plurality of taps each including a photo transistor, a first transfer transistor connected with the photo transistor, a storage element connected with the first transfer transistor, a second transfer transistor connected with the storage element, a floating diffusion area connected with the second transfer transistor, and a readout circuit connected with the floating diffusion area. An overflow transistor is disposed adjacent to the photo transistor and connected with a power supply voltage.

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

Abstract: A pixel array in a three-dimensional image sensor includes depth pixels and an ambient light cancellation (ALC) circuit. The depth pixels operate in response to photo control signals having different phases, and generate distance information of an object based on light reflected by the object. The ALC circuit removes an ambient light component from the reflected light, and is shared by the depth pixels. Each depth pixel includes a photoelectric conversion region, a floating diffusion region, a photo gate, and a drain gate. The photoelectric conversion region collects photo charges based on the reflected light. The floating diffusion region accumulates the photo charges. The photo gate is activated in response to one of the photo control signals. The photoelectric conversion region accumulates the photo charges when the photo gate is activated, and the photo charges in the photoelectric conversion region are released when the drain gate is activated.

Abstract: Image sensors are provided. An image sensor includes a substrate that includes a pixel region, a first surface, and a second surface that is opposite the first surface. The image sensor includes first and second photogates that are on the first surface and are configured to generate electric charge responsive to incident light in the pixel region. Moreover, the image sensor includes first and second lenses that are on the second surface and are configured to pass the incident light toward the first and second photogates.