Patents by Inventor Minu PRABHACHANDRAN NAIR

Minu PRABHACHANDRAN NAIR has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11963452
    Abstract: A method of forming a piezoelectric microphone with an interlock/stopper and a micro-bump and a resulting device are provided. Embodiments include forming a membrane over a Si substrate having a first and second sacrificial layer disposed on opposite surfaces thereof, the membrane being formed on the first sacrificial layer, forming a first HM over the membrane, forming first and second vias through the first HM, forming a first pad layer in the first and second vias and over an exposed top thin film, forming a trench to the first sacrificial layer between the first and second vias and a gap between the trench and second via, patterning a second HM over the membrane, in the first and second vias, the trench and the gap, and forming a second pad layer over the second HM and in exposed areas around the first and second vias to form pad structures.
    Type: Grant
    Filed: November 24, 2020
    Date of Patent: April 16, 2024
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
    Inventors: Jia Jie Xia, Rakesh Kumar, Minu Prabhachandran Nair, Nagarajan Ranganathan
  • Publication number: 20210083169
    Abstract: A method of forming a piezoelectric microphone with an interlock/stopper and a micro-bump and a resulting device are provided. Embodiments include forming a membrane over a Si substrate having a first and second sacrificial layer disposed on opposite surfaces thereof, the membrane being formed on the first sacrificial layer, forming a first HM over the membrane, forming first and second vias through the first HM, forming a first pad layer in the first and second vias and over an exposed top thin film, forming a trench to the first sacrificial layer between the first and second vias and a gap between the trench and second via, patterning a second HM over the membrane, in the first and second vias, the trench and the gap, and forming a second pad layer over the second HM and in exposed areas around the first and second vias to form pad structures.
    Type: Application
    Filed: November 24, 2020
    Publication date: March 18, 2021
    Inventors: Jia Jie Xia, RAKESH KUMAR, Minu Prabhachandran NAIR, Nagarajan RANGANATHAN
  • Patent number: 10886455
    Abstract: A method of forming a piezoelectric microphone with an interlock/stopper and a micro-bump and a resulting device are provided. Embodiments include forming a membrane over a Si substrate having a first and second sacrificial layer disposed on opposite surfaces thereof, the membrane being formed on the first sacrificial layer, forming a first HM over the membrane, forming first and second vias through the first HM, forming a first pad layer in the first and second vias and over an exposed top thin film, forming a trench to the first sacrificial layer between the first and second vias and a gap between the trench and second via, patterning a second HM over the membrane, in the first and second vias, the trench and the gap, and forming a second pad layer over the second HM and in exposed areas around the first and second vias to form pad structures.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: January 5, 2021
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
    Inventors: Jia Jie Xia, Rakesh Kumar, Minu Prabhachandran Nair, Nagarajan Ranganathan
  • Patent number: 10490728
    Abstract: Microelectromechanical System (MEMS) devices and related fabrication methods. A piezoelectric stack is formed on a substrate and is separated from the substrate by a dielectric layer. The piezoelectric stack is formed that includes first and second piezoelectric layers with a first electrode below the first piezoelectric layer, as well as a contact pad and a second electrode between the first and second piezoelectric layers. A first contact is formed that extends through the piezoelectric layers and contact pad to the first electrode. A second contact is formed that extends through the second piezoelectric layer to the second electrode. The contact pad prevents an interface to form between the first and second piezoelectric layers in the contact opening, thus preventing corrosion of the piezoelectric layers during contact formation process.
    Type: Grant
    Filed: September 5, 2016
    Date of Patent: November 26, 2019
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Jia Jie Xia, Minu Prabhachandran Nair, Zouhair Sbiaa, Ramachandramurthy Pradeep Yelehanka, Rakesh Kumar
  • Publication number: 20190036003
    Abstract: A method of forming a piezoelectric microphone with an interlock/stopper and a micro-bump and a resulting device are provided. Embodiments include forming a membrane over a Si substrate having a first and second sacrificial layer disposed on opposite surfaces thereof, the membrane being formed on the first sacrificial layer, forming a first HM over the membrane, forming first and second vias through the first HM, forming a first pad layer in the first and second vias and over an exposed top thin film, forming a trench to the first sacrificial layer between the first and second vias and a gap between the trench and second via, patterning a second HM over the membrane, in the first and second vias, the trench and the gap, and forming a second pad layer over the second HM and in exposed areas around the first and second vias to form pad structures.
    Type: Application
    Filed: July 31, 2017
    Publication date: January 31, 2019
    Inventors: Jia Jie XIA, Rakesh KUMAR, Minu Prabhachandran NAIR, Nagarajan RANGANATHAN
  • Publication number: 20170301853
    Abstract: A Microelectromechanical System (MEMS) device which includes a piezoelectric stack on a substrate separated by a dielectric layer is disclosed. The piezoelectric stack includes first and second piezoelectric layers with a first electrode below the first piezoelectric layer and a contact pad and a second electrode between the first and second piezoelectric layers. A first contact extends through the piezoelectric layers and contact pad to the first electrode and a second contact extends through the second piezoelectric layer to the second electrode. The contact pad prevents an interface to form between the first and second piezoelectric layers in the contact opening, thus preventing corrosion of the piezoelectric layers during contact formation process.
    Type: Application
    Filed: September 5, 2016
    Publication date: October 19, 2017
    Inventors: Jia Jie XIA, Minu PRABHACHANDRAN NAIR, Zouhair SBIAA, Ramachandramurthy Pradeep YELEHANKA, Rakesh KUMAR