Patents by Inventor Min-Woo KWON

Min-Woo KWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250101776
    Abstract: A locking mechanism for a console device, which restricts a console armrest of the console device disposed between a driver seat and a passenger seat inside a vehicle, includes a housing mounted on a front surface of a console box of the console device, a pivoting lever pivotably coupled to an inner surface of the housing, a slider pivotably coupled to an upper body of the pivoting lever, an inertial member interlocking portion coupled to a lower body of the pivoting lever, an inertial member seating portion which is mounted on the housing and on which an inertial member is seated, and the inertial member provided between the inertial member interlocking portion and the inertial member seating portion and configured to operate the inertial member interlocking portion when a collision of the vehicle occurs.
    Type: Application
    Filed: January 5, 2024
    Publication date: March 27, 2025
    Inventors: Min-Woo Kwon, Jae-Hyun An, Chang-Hoon Yang, Hong-Sik Chang, Sung-Hwan Kim, Seung-Mok Yu, Ji-Hun Lee
  • Patent number: 10522665
    Abstract: Semiconductor circuits are provided for emulating neuron firing process using a positive feedback transistor having first and second gate electrodes in the longitudinal direction of a channel region. The first gate electrode is connected to a gate electrode of a first p-channel MOSFET to be an input terminal and the second gate electrode is connected to a drain to be applied with a supply voltage. Thus electrons and holes can accumulate separately in a channel region (i.e., a body) under each of the gate electrodes by applying input signals to the input terminal and drastically reduce the wasted power consumption in the non-fired neurons because the current is turned on and off only at a moment that corresponds to a firing of the neuron. Thus, the semiconductor circuits can be driven by low power and have the same level of endurance as a general MOSFET.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: December 31, 2019
    Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Byung-Gook Park, Min-Woo Kwon, Sungmin Hwang, Myung-Hyun Baek, Tae-Jin Jang
  • Publication number: 20180374938
    Abstract: Semiconductor circuits are provided for emulating neuron firing process using a positive feedback transistor having first and second gate electrodes in the longitudinal direction of a channel region. The first gate electrode is connected to a gate electrode of a first p-channel MOSFET to be an input terminal and the second gate electrode is connected to a drain to be applied with a supply voltage. Thus electrons and holes can accumulate separately in a channel region (i.e., a body) under each of the gate electrodes by applying input signals to the input terminal and drastically reduce the wasted power consumption in the non-fired neurons because the current is turned on and off only at a moment that corresponds to a firing of the neuron. Thus, the semiconductor circuits can be driven by low power and have the same level of endurance as a general MOSFET.
    Type: Application
    Filed: June 13, 2018
    Publication date: December 27, 2018
    Inventors: Byung-Gook Park, Min-Woo Kwon, Sungmin Hwang, Myung-Hyun Baek, Tae-Jin Jang
  • Patent number: 9846838
    Abstract: The present invention provides a semiconductor circuit for emulating neuron firing process having a floating body device instead of the conventional capacitor. By using a floating body to store excess holes generated by impact ionization, it is possible to emulate signal accumulation of a neuron, trigger firing when the storage is in excess of a predetermined threshold value, and return to an original state after the firing.
    Type: Grant
    Filed: March 2, 2015
    Date of Patent: December 19, 2017
    Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Byung-Gook Park, Min-Woo Kwon, Hyungjin Kim
  • Patent number: 9165242
    Abstract: Disclosed is a semiconductor device used to embody a neuromorphic computation system and operation method thereof. By comprising a floating body as a short-term memory means electrically isolated from the surroundings and a long-term memory means formed at one side of the floating body not formed of a source, a drain and a gate, a low power synaptic semiconductor device is provided, which can be mimic not only the short-term memory in a nervous system of a living body by an impact ionization, but also the short- and long-term memory transition property and the causal inference property of a living body due to the time difference of signals of the pre- and post-synaptic neurons.
    Type: Grant
    Filed: September 5, 2013
    Date of Patent: October 20, 2015
    Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Byung-Gook Park, Hyungjin Kim, Garam Kim, Jung Han Lee, Min-Woo Kwon
  • Publication number: 20150254552
    Abstract: The present invention provides a semiconductor circuit for emulating neuron firing process having a floating body device instead of the conventional capacitor. By using a floating body to store excess holes generated by impact ionization, it is possible to emulate signal accumulation of a neuron, trigger firing when the storage is in excess of a predetermined threshold value, and return to an original state after the firing.
    Type: Application
    Filed: March 2, 2015
    Publication date: September 10, 2015
    Inventors: Byung-Gook Park, Min-Woo Kwon, Hyungjin Kim
  • Publication number: 20140067743
    Abstract: Disclosed is a semiconductor device used to embody a neuromorphic computation system and operation method thereof. By comprising a floating body as a short-term memory means electrically isolated from the surroundings and a long-term memory means formed at one side of the floating body not formed of a source, a drain and a gate, a low power synaptic semiconductor device is provided, which can be mimic not only the short-term memory in a nervous system of a living body by an impact ionization, but also the short- and long-term memory transition property and the causal inference property of a living body due to the time difference of signals of the pre- and post-synaptic neurons.
    Type: Application
    Filed: September 5, 2013
    Publication date: March 6, 2014
    Applicant: Seoul National University R&DB FOUNDATION
    Inventors: Byung-Gook PARK, Hyungjin KIM, Garam KIM, Jung Han LEE, Min-Woo KWON