Abstract: Light from a plurality of light sources is combined in a beam combiner. Photo-sensors are used to sense the intensity of each light source. Signals from the photo-sensors may be used to control the intensity of the light sources. The photo-sensors can be located in the beam combiner or located in the fringe of a collimated beam produced by the beam combiner. The illumination system has application in laser-scanning micro-projectors, for example.

Abstract: A method and apparatus for controlling light intensity from two or more light sources. A timing scheme is used to modulate the light sources. Light from the light sources is combined to form a beam and a photo-sensor senses the beam. In a time interval when only one of the light sources is activated, the signal from the photo-sensor is monitored and used in a feedback control circuit to control the active light source.

Abstract: A microelectromechanical systems (MEMS) apparatus (100) having a footprint of about 1 to 10 millimeters by about 1 to 10 millimeters comprises a movable member (101) that can be stopped at either of at least two positions by electrically neutral stops (105, 107). Depending upon the needs of a given application, these stops may all be fabricated using materials deposition and removal techniques or some, though not all, may comprise an attached component.

Abstract: A MEMS based optical switch comprises a bottom electrode, a cantilever electrode, and a top electrode, all of which overlay a carrier board. An absence of a voltage differential between the top and bottom electrodes locates the cantilever electrode in a neutral position between the top and bottom electrodes. A presence of a voltage differential between the top and bottom electrodes locates the cantilever electrode in a position biased toward either the top electrode or the bottom electrode.

Abstract: Organic field effect transistors (OFETs) can be created rapidly and at low cost on organic films by using a multilayer film (202) that has an electrically conducting layer (204, 206) on each side of a dielectric core. The electrically conducting layer is patterned to form gate electrodes (214), and a polymer film (223) is attached onto the gate electrode side of the multilayer dielectric film, using heat and pressure (225) or an adhesive layer (228). A source electrode and a drain electrode (236) are then fashioned on the remaining side of the multilayer dielectric film, and an organic semiconductor (247) is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.

Abstract: Organic field effect transistors (OFETs) can be created rapidly and at low cost on organic films by using a multilayer film (202) that has an electrically conducting layer (204, 206) on each side of a dielectric core. The electrically conducting layer is patterned to form gate electrodes (214), and a polymer film (223) is attached onto the gate electrode side of the multilayer dielectric film, using heat and pressure (225) or an adhesive layer (228). A source electrode and a drain electrode (236) are then fashioned on the remaining side of the multilayer dielectric film, and an organic semiconductor (247) is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.

Abstract: A dielectric film is formed on a free-standing conductive metal layer to form a multi-layer foil comprising a conductive metal layer, a barrier layer and a dielectric oxide layer. Such multi-layer foils are mechanically flexible, and useful for the manufacture of capacitors. Examples of barrier layers include Ni—P or Ni—Cr alloys. After a second layer of conductive metal is deposited on a dielectric oxide surface opposing the first conductive metal layer, the resulting capacitor foil is processed into a capacitor. The resulting capacitor is a surface mounted capacitor or is formed as a integrated or embedded capacitor within a circuit board.

Abstract: A MEMS based optical switch comprises a bottom electrode, a cantilever electrode, and a top electrode, all of which overlay a carrier board. An absence of a voltage differential between the top and bottom electrodes locates the cantilever electrode in a neutral position between the top and bottom electrodes. A presence of a voltage differential between the top and bottom electrodes locates the cantilever electrode in a position biased toward either the top electrode or the bottom electrode.

Abstract: Organic field effect transistors (OFETs) can be created rapidly and at low cost on organic films by using a multilayer film (202) that has an electrically conducting layer (204, 206) on each side of a dielectric core. The electrically conducting layer is patterned to form gate electrodes (214), and a polymer film (223) is attached onto the gate electrode side of the multilayer dielectric film, using heat and pressure (225) or an adhesive layer (228). A source electrode and a drain electrode (236) are then fashioned on the remaining side of the multilayer dielectric film, and an organic semiconductor (247) is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.

Abstract: A dielectric film is formed on a free-standing conductive metal layer to form a multi-layer foil comprising a conductive metal layer, a barrier layer and a dielectric oxide layer. Such multi-layer foils are mechanically flexible, and useful for the manufacture of capacitors. Examples of barrier layers include Ni—P or Ni—Cr alloys. After a second layer of conductive metal is deposited on a dielectric oxide surface opposing the first conductive metal layer, the resulting capacitor foil is processed into a capacitor. The resulting capacitor is a surface mounted capacitor or is formed as a integrated or embedded capacitor within a circuit board.

Abstract: A dielectric film is formed on a free-standing conductive metal layer to form a multi-layer foil comprising a conductive metal layer, a barrier layer and a dielectric oxide layer. Such multi-layer foils are mechanically flexible, and useful for the manufacture of capacitors. Examples of barrier layers include Ni—P or Ni—Cr alloys. After a second layer of conductive metal is deposited on a dielectric oxide surface opposing the first conductive metal layer, the resulting capacitor foil is processed into a capacitor. The resulting capacitor is a surface mounted capacitor or is formed as a integrated or embedded capacitor within a circuit board.

Abstract: A method for manufacturing a microelectronic assembly to have aligned conductive regions and dielectric regions with desirable processing and dimensional characteristics. The invention is particularly useful for producing integral capacitors, with the desired processing and dimensional characteristics achieved with the invention yielding predictable electrical characteristics for the capacitors. The method generally entails providing a substrate with a first conductive layer, forming a dielectric layer on the first conductive layer, and then forming a second conductive layer on the dielectric layer. A first region of the second conductive layer is then removed to expose a first region of the dielectric layer, which in turn is removed to expose a first region of the first conductive layer that is also removed.

Abstract: Printed circuit boards with integral high and low value resistors are efficiently produced. The method of their manufacture entails applying a first layer of a low resistance material onto a dielectric substrate in a predetermined thickness and pattern. The pattern defines the electrical lengths and widths of low value resistors, as well as pairs of terminal electrode pads for the high value resistors. A second layer of a high resistance material is applied between and in contact with the top surfaces of the facing ends of each member of the terminal pad pairs. The fixed lengths, widths and thicknesses of the patterned high resistance material determine the values of the high value resistors. Conductive metal terminals are provided at the ends of the low value resistors and at the distal ends of the high value resistor pad pairs to complete the resistors.

Abstract: A process for forming a resistor whose dimensions can be accurately determined by a photoimaging process, thereby yielding a resistor whose size and resistance value render the resistor a viable alternative to discrete chip resistors. The resistor is formed of a photoimageable resistive thick-film material that enables the dimensions of a resistor to be determined directly by photodefinition instead of conventional screen printing. Electrically-conductive terminations are provided that determine the electrical length of the resistor. The terminations may be formed prior to depositing the resistive layer, or after the resistive layer has been photoimaged and developed. If the latter approach is used, the terminations may be formed by depositing a photoimageable layer on the resistor, photoimaging and developing the photoimageable layer so as to form openings that expose regions of the resistor, and then plating, e.g.