Patents by Inventor Minxu Li

Minxu Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170367664
    Abstract: An imaging method comprises the steps of: putting an object in a detection region, and biasing a detector (1-8) relative to the object; moving an imaging system along a longitudinal Z axis, enabling a ray source (1-7) and the detector (1-8) to synchronously perform circular movement around the object, performing scanning and data collection, and supplementing the data; and reconstructing the collected data to obtain a complete object image. The imaging method combines detector biasing and spiral scanning, solves the problem that an image splicing method used in conventional CT imaging generates artifacts, reduces the usage area of the detector, and reduces system cost.
    Type: Application
    Filed: November 27, 2015
    Publication date: December 28, 2017
    Inventors: Yan Xi, Jun YAO, Minxu LI
  • Publication number: 20010000865
    Abstract: A residual gas analyzer can be used as a deposition rate monitor. A deposition rate monitor is based on the detection of growth precursors and reaction byproducts of the thin film growth in deposition equipment such as chemical vapor deposition (CVD) systems. The growth precursors and byproducts are identified and quantified by using a residual gas analyzer (RGA). The ion current from gas species associated with the growth rate is then empirically correlated with the thickness of the film. The specific chemical species detected by the RGA is unique to the material that is deposited and to the technique in which the material is deposited.
    Type: Application
    Filed: December 7, 2000
    Publication date: May 10, 2001
    Applicant: NATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Kevin Gaughen, Ching-Wei Chen, Minxu Li
  • Patent number: 6210745
    Abstract: A residual gas analyzer can be used as a deposition rate monitor. A deposition rate monitor is based on the detection of growth precursors and reaction byproducts of the thin film growth in deposition equipment such as chemical vapor deposition (CVD) systems. The growth precursors and byproducts are identified and quantified by using a residual gas analyzer (RGA). The ion current from gas species associated with the growth rate is then empirically correlated with the thickness of the film. The specific chemical species detected by the RGA is unique to the material that is deposited and to the technique in which the material is deposited.
    Type: Grant
    Filed: July 8, 1999
    Date of Patent: April 3, 2001
    Assignee: National Semiconductor Corporation
    Inventors: Kevin Gaughan, Ching-Wei Chen, Minxu Li