Abstract: Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) cells that undergo perpendicular magnetization switching in the absence of an in-plane magnetic field and methods for their operation are provided. The SOT-MRAM cells use cobalt-iron-boron alloys, cobalt-iron alloys, metallic cobalt, and/or metallic iron as the ferromagnetic free layer in a magnetic tunnel junction. By designing the ferromagnetic layer with appropriate lateral dimensions and operating the SOT-MRAM cells with an appropriate charge current density, deterministic perpendicular magnetization switching is achieved without the need to apply an external in-plane bias collinear with the charge current.

Abstract: Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) cells that undergo perpendicular magnetization switching in the absence of an in-plane magnetic field and methods for their operation are provided. The SOT-MRAM cells use cobalt-iron-boron alloys, cobalt-iron alloys, metallic cobalt, and/or metallic iron as the ferromagnetic free layer in a magnetic tunnel junction. By designing the ferromagnetic layer with appropriate lateral dimensions and operating the SOT-MRAM cells with an appropriate charge current density, deterministic perpendicular magnetization switching is achieved without the need to apply an external in-plane bias collinear with the charge current.