Patents by Inventor MINYOU HE
MINYOU HE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145630Abstract: A light-emitting device includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer which are disposed on the upper surface of the substrate in such order. The substrate has a substrate edge region surrounding and exposed from the epitaxial structure. The substrate edge region includes a first substrate edge region and a second substrate edge region which is more proximate to the epitaxial structure than the first substrate edge region. The first substrate edge region has a first uneven toothed surface or an even flat surface. The second substrate edge regions are formed with second uneven toothed surfaces which have a height greater than a height of the first even toothed surface, or the even flat surface.Type: ApplicationFiled: October 31, 2023Publication date: May 2, 2024Inventors: Minyou HE, Xiaoliang LIU, Qing WANG, Ling-Yuan HONG, Chung-Ying CHANG
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Publication number: 20240014355Abstract: A light-emitting diode includes a semiconductor light-emitting sequence layer and a DBR structure. The DBR structure is disposed on a first surface of the semiconductor light-emitting sequence layer. The DBR structure includes m first sublayers and n second sublayers stacked in an alternating manner, wherein m and n are positive integers larger than 1. Materials of the first sublayers and the second sublayers are different. One first sublayer and one second sublayer adjacent to each other are defined as a group of a stacked-layer structure. In each of at least 40% of the groups of the stacked-layer structures, an optical thickness of one sublayer is greater than ? of a central wavelength of light emitted by the semiconductor light-emitting sequence layer and an optical thickness of the other sublayer is less than ? of the central wavelength of the light emitted by the semiconductor light-emitting sequence layer.Type: ApplicationFiled: June 26, 2023Publication date: January 11, 2024Applicant: Hubei Sanan Optoelectronics Co., Ltd.Inventors: Qing WANG, Zhanggen XIA, Minyou HE, Guangyao WU, Peng LIU, Lingyuan HONG, Chungying CHANG
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Publication number: 20230290907Abstract: A light-emitting device includes a light-emitting element including an epitaxial structure and a DBR. The DBR includes first and second reflective units. The first reflective unit includes first reflective structures. The second reflective unit includes second reflective structures. Each of the first and second reflective structures has first and second material layers. The first material layer of each of the first reflective structures has an optical thickness different from that of the first material layer of each of the second reflective structures. The second material layer of each of the first reflective structures has an optical thickness different from that of the second material layer of each of the second reflective structures. In each of the first and second reflective structures, the first material layer has a refractive index different from that of the second material layer.Type: ApplicationFiled: May 18, 2023Publication date: September 14, 2023Inventors: Qing WANG, Wei LI, Minyou HE, Shiwei LIU, Ling-yuan HONG, Su-hui LIN, Chung-ying CHANG
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Publication number: 20230253531Abstract: A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The semiconductor light-emitting stack includes, in sequence from bottom to top, a second conductivity type semiconductor layer, a light-emitting layer, and a first conductivity type semiconductor layer. The transparent conductive layer is disposed on the first conductivity type semiconductor layer, and is formed with a first opening which is defined by an inner edge of the transparent conductive layer. The first current blocking layer is formed on the first conductivity type semiconductor layer. The first electrode pad is formed on and in contact with both the first current blocking layer and on the first conductivity type semiconductor layer. The first electrode pad has a width not greater than a dimension of the first opening.Type: ApplicationFiled: April 7, 2023Publication date: August 10, 2023Inventors: GONG CHEN, SU-HUI LIN, SHENG-HSIEN HSU, MINYOU HE, KANG-WEI PENG, LING-YUAN HONG
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Patent number: 11637218Abstract: A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The transparent conductive layer is disposed on the semiconductor light-emitting stack, and is formed with a first opening defined by an inner edge thereof. The first current blocking layer is formed on the semiconductor light-emitting stack, and is surrounded by and spaced apart from the inner edge of the transparent conductive layer by a first gap. The first electrode pad fully covers the first current blocking layer so as to permit the first electrode pad to be in contact with the semiconductor light-emitting stack through the first gap.Type: GrantFiled: December 22, 2020Date of Patent: April 25, 2023Assignee: Xiamen San'an Optoelectronics Co., Ltd.Inventors: Gong Chen, Su-Hui Lin, Sheng-Hsien Hsu, Minyou He, Kang-Wei Peng, Ling-Yuan Hong
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Publication number: 20230014850Abstract: A flip light-emitting diode (LED) and a semiconductor light-emitting device are provided. The flip-chip LED includes a substrate, a semiconductor stacking layer formed on a first surface of the substrate for radiating light, and an optical thin film stacking layer formed on a second surface of the substrate and including a first reflective film group. The first reflective film group includes a first material layer and a second material layer repeatedly stacked. Optical thicknesses of the first and second material layers meet: the first reflective film group reflects a light with a wavelength in a range from 420 nm to 480 nm and at an incident angle being a first angle, and partially transmits a light with the wavelength and at an incident angle being a second angle, and the first angle is smaller than the second angle. The brightness of the flip-chip LED can be improved.Type: ApplicationFiled: June 29, 2022Publication date: January 19, 2023Inventors: QING WANG, MINYOU HE, JIANGBIN ZENG, SHIWEI LIU, JIN XU, XIAOLIANG LIU, ZHANGGEN XIA, LINGYUAN HONG, BAOJUN SHI, SHUIJIE WANG, KE LIU, DAZHONG CHEN, CHUNGYING CHANG
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Publication number: 20230006096Abstract: A semiconductor light-emitting device includes a light-transmissible substrate, and a semiconductor light-emitting stack. The light-transmissible substrate is made of a first material, and has a first surface and a second surface opposite to the first surface. The first surface has a first region, and a second region which is formed with a plurality of protruding portions and a plurality of recessed portions formed therebetween. The recessed portions are disposed at a level lower than that of the first region relative to the second surface. The semiconductor light-emitting stack is disposed on the first region of the first surface along a stacking direction.Type: ApplicationFiled: September 7, 2022Publication date: January 5, 2023Inventors: Gong CHEN, Sheng-Hsien HSU, Su-Hui LIN, Kang-Wei PENG, Ling-Yuan HONG, Minyou HE
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Publication number: 20220406969Abstract: A light-emitting diode chip includes a light-emitting unit, a first electrode, an insulating layer, and a second electrode. The first electrode is disposed on the light-emitting unit. The insulating layer is disposed on the first electrode and the light-emitting unit, and has a through hole and a hole-defining wall. The hole-defining wall has a top peripheral edge that has two opposite end points. A projection of at least one of the end points of the top peripheral edge on the light-emitting unit falls outside a projection of a top surface of the first electrode on the light-emitting unit. The second electrode is disposed on the insulating layer and fills the through hole to electrically connect to the first electrode.Type: ApplicationFiled: June 13, 2022Publication date: December 22, 2022Inventors: LING-YUAN HONG, XIAOLIANG LIU, QING WANG, MINYOU HE, CHUNG-YING CHANG
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Publication number: 20220029052Abstract: A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.Type: ApplicationFiled: October 12, 2021Publication date: January 27, 2022Inventors: GONG CHEN, SU-HUI LIN, SHENG-HSIEN HSU, KANG-WEI PENG, LING-YUAN HONG, MINYOU HE, CHIA-HUNG CHANG
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Publication number: 20210193868Abstract: A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The transparent conductive layer is disposed on the semiconductor light-emitting stack, and is formed with a first opening defined by an inner edge thereof. The first current blocking layer is formed on the semiconductor light-emitting stack, and is surrounded by and spaced apart from the inner edge of the transparent conductive layer by a first gap. The first electrode pad fully covers the first current blocking layer so as to permit the first electrode pad to be in contact with the semiconductor light-emitting stack through the first gap.Type: ApplicationFiled: December 22, 2020Publication date: June 24, 2021Inventors: GONG CHEN, SU-HUI LIN, SHENG-HSIEN HSU, MINYOU HE, KANG-WEI PENG, LING-YUAN HONG