Abstract: Provided is a pattern formation method including forming a resist film by applying a resist composition including an organometallic compound and an additive, forming an exposed portion and an unexposed portion by exposing at least a portion of the resist film to high-energy rays, and developing the exposed resist film by using a developer, wherein i) the developer is a hydrophobic developer, and the unexposed portion is removed in the developing; or ii) the developer is a hydrophilic developer, and the exposed portion is removed in the developing. The organometallic compound is represented by formula 1, and the additive is represented by formula 2. wherein, for descriptions of M11, Rx, Ry, n, m, Y21, Y22, L21, and a21 in Formulas 1 and 2, reference may be made to the specification.

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1 below, a resist composition including the same, and a pattern formation method using the resist composition. In Formula 1, L11, L12, a11, a12, X11, and X12 are provided herein.

Abstract: Provided are a resist composition and a method of manufacturing a pattern by using the same, the resist film including an organometallic compound represented by Formula 1, and a solvent including a polar aprotic solvent: wherein R11, R12, and n in Formula 1 are as defined in the specification.

Abstract: A pattern formation method may use a resist composition. The resist composition may include an organometallic compound represented by any one of Formulae 1-1 to 1-4, an additive represented by Formula 2, and a solvent. The solvent may include a non-polar solvent, a polar aprotic solvent, or a combination thereof. Refer to the specification for the descriptions of M11, L11 to L14, a11 to a14, R11 to R14, b11 to b14, Y11 to Y13, X11 to X13, Y21, Y22, L21, and a21 in Formulae 1-1 to 1-4 and 2.

Abstract: Provided are a polymer, a resist composition including the same, and a method of forming a pattern by using the same. The polymer may include at least 20 mol % of a first repeating unit represented by Formula 1 below and the polymer not include a repeating unit A including at least one selected from an aryl group substituted with a hydroxy group and a heteroaryl group substituted with a hydroxy group. In Formula 1, L11 to L13, a11 to a13, X11, and R11 to R13 are as described in the specification.

Abstract: Provided are a resist composition including an organometallic compound represented by the following Formula 1 and an additive represented by the following Formula 2, and a pattern formation method using the same: wherein in Formulae 1 and 2, M11, Rx, Ry, n, m, A21, L21 to L23, a21 to a23, R21, R22, b21, b22, X21, o, p and q are as described in the specification.

Abstract: Provided are a resist composition and a pattern formation method using the same. The resist composition may include an organometallic compound represented by one of Formulae 1-1 to 1-4, and an additive represented by Formula 2: wherein M11, L11 to L14, a11 to a14, R11 to R14, b11 to b14, Y11 to Y13, X11 to X13, Y21, Y22, L21, and a21 in Formulae 1-1 to 1-4 and 2 are described in the specification.

Abstract: Provided are an organometallic compound represented by one of Formulae 1-1 to 1-4, a resist composition including the same, and a pattern formation method using the resist composition: M11, Q11 to Q14, b11 to b14, R11 to R14, Y11 to Y13, and X11 to X14 in Formulae 1-1 to 1-4 are as described in the specification.

Abstract: Provided are an organic salt represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition: For descriptions of L1, n1, R1, and A+ in Formula 1, refer to those provided herein.

Abstract: Provided are a polymer including a repeating unit represented by Formula 1, a photoresist composition including the polymer, and a method of forming a pattern by using the photoresist composition: wherein the details of R11, L11, a11, A11?, and B11+in Formula 1 are provided in the present specification.