Abstract: Provided is an IGBT device belonging to the technical field of semiconductor power devices. The IGBT device includes an n-type semiconductor layer, several p-type body regions located in the n-type semiconductor layer, a gate trench located in the n-type semiconductor layer and between adjacent p-type body regions, a gate trench located in the n-type semiconductor layer and between adjacent p-type body regions, a shielded gate located in a lower part of the gate trench, and a gate located in an upper part of the gate trench. The gate, the shielded gate, and the n-type semiconductor layer are insulated and isolated from each other. Among the several p-type body regions, at least one p-type body region has a first doping concentration and is defined as a first p-type body region, and at least one p-type body region has a second doping concentration and is defined as a second p-type body region.

Abstract: Provided is an IGBT device. The IGBT device includes a p-type collector region, an n-type semiconductor layer located above the p-type collector region, a plurality of gate trenches, shielded gates, gates, and a p-type body region located in the n-type semiconductor layer and between adjacent gate trenches. The gate trenches are located in the n-type semiconductor layer. A shielded gate is located in a lower part of a gate trench. A gate is located in an upper part of the gate trench. The gate, the shielded gate, and the n-type semiconductor layer are insulated and isolated from each other. Partial shielded gates are each externally connected to a gate voltage and are each defined as a first shielded gate. Shielded gates other than the partial shielded gates are each externally connected to an emitter electrode voltage and are each defined as a second shielded gate. The first shielded gate and the second shielded gate are disposed alternately.

Abstract: The present invention relates to the field of manufacturing technologies of semiconductor power devices, and more particularly to a method for manufacturing a split-gate power device. In the method for manufacturing a split-gate power device according to the present invention, lateral etching is added to form lateral recesses of a control gate groove below a first insulating film in a process of forming the control gate groove by etching, and therefore, after a first conductive film is deposited, the first conductive film can be directly etched by using the first insulating film as a mask to form control gates. The technical process of the present invention is simplified, reliable and easy to control, and can greatly improve the yield of the split-gate power device. The present invention is particularly suitable for the manufacture of 25V-200V semiconductor power devices.

Abstract: The present invention relates to the field of manufacturing technologies of semiconductor power devices, and more particularly to a method for manufacturing a split-gate power device. In the method for manufacturing a split-gate power device according to the present invention, lateral etching is added to form lateral recesses of a control gate groove below a first insulating film in a process of forming the control gate groove by etching, and therefore, after a first conductive film is deposited, the first conductive film can be directly etched by using the first insulating film as a mask to form control gates. The technical process of the present invention is simplified, reliable and easy to control, and can greatly improve the yield of the split-gate power device. The present invention is particularly suitable for the manufacture of 25V-200V semiconductor power devices.