Patents by Inventor Minzhi LIN

Minzhi LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing split-gate power device
    Patent number: 9673299
    Abstract: The present invention relates to the field of manufacturing technologies of semiconductor power devices, and more particularly to a method for manufacturing a split-gate power device. In the method for manufacturing a split-gate power device according to the present invention, lateral etching is added to form lateral recesses of a control gate groove below a first insulating film in a process of forming the control gate groove by etching, and therefore, after a first conductive film is deposited, the first conductive film can be directly etched by using the first insulating film as a mask to form control gates. The technical process of the present invention is simplified, reliable and easy to control, and can greatly improve the yield of the split-gate power device. The present invention is particularly suitable for the manufacture of 25V-200V semiconductor power devices.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: June 6, 2017
    Assignee: SU ZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
    Inventors: Zhendong Mao, Lei Liu, Wei Liu, Minzhi Lin
  • METHOD FOR MANUFACTURING SPLIT-GATE POWER DEVICE
    Publication number: 20170062586
    Abstract: The present invention relates to the field of manufacturing technologies of semiconductor power devices, and more particularly to a method for manufacturing a split-gate power device. In the method for manufacturing a split-gate power device according to the present invention, lateral etching is added to form lateral recesses of a control gate groove below a first insulating film in a process of forming the control gate groove by etching, and therefore, after a first conductive film is deposited, the first conductive film can be directly etched by using the first insulating film as a mask to form control gates. The technical process of the present invention is simplified, reliable and easy to control, and can greatly improve the yield of the split-gate power device. The present invention is particularly suitable for the manufacture of 25V-200V semiconductor power devices.
    Type: Application
    Filed: March 15, 2016
    Publication date: March 2, 2017
    Applicant: SU ZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
    Inventors: Zhendong MAO, Lei LIU, Wei LIU, Minzhi LIN