Abstract: A system for determining rim shape includes a memory and a processor in communication with the memory. The processor is configured to receive one or more specifications for a rim. The processor is also configured to determine a rim depth for the rim based at least in part on the one or more specifications and a pareto front of rim shapes. The processor is also configured to determine a curvature control ratio and an endpoint tangency angle for the rim based at least in part on the rim depth. The processor is further configured to generate a rim shape for the rim based at least in part on the rim depth, the curvature control ratio, and the endpoint tangency angle.

Abstract: A system for determining rim shape includes a memory and a processor in communication with the memory. The processor is configured to receive one or more specifications for a rim. The processor is also configured to determine a rim depth for the rim based at least in part on the one or more specifications and a pareto front of rim shapes. The processor is also configured to determine a curvature control ratio and an endpoint tangency angle for the rim based at least in part on the rim depth. The processor is further configured to generate a rim shape for the rim based at least in part on the rim depth, the curvature control ratio, and the endpoint tangency angle.

Abstract: A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.

Abstract: A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.

Abstract: A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.

Abstract: There is provided a reaction apparatus which is capable of keeping the pressure inside the reactor and is applicable to various fields. This reaction apparatus comprises: a raw material tank (2) for storing a raw material; a high-pressure pump (3) communicated with the raw material tank (2) and designed to deliver the raw material therefrom; a reactor (1) which is disposed on the downstream side of the high-pressure pump (3) and designed to be supplied with the raw material in a compressed state; a heating bath (11) for heating the reactor (1) to promote a reaction; and a product tank (7) for receiving and recovering a product; wherein the reaction apparatus is further equipped with an inlet port which is interposed between the heating bath (11) and the product tank (7), and with an injection pump (6) for injecting an injecting liquid through the inlet port, whereby a pressure of product flowing into the product tank (7) is enabled to be reduced by making use of the flow rate of the injecting liquid.

Abstract: A HEMT-type field-effect semiconductor device has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source and a drain overlie the electron supply layer. A carrier storage layer overlies the electron supply layer via an insulator, and a gate overlies the carrier storage layer via another insulator. Upon application of an initialiser voltage to the gate, the carrier storage layer has stored therein a sufficient amount of carriers to hold the device off even without voltage application to the gate. An initialiser circuit is also disclosed whereby the device is initialized automatically for normally-off operation.

Abstract: A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.

Abstract: A gate drive circuit including dead time control circuits delaying on periods of switching elements S1, S2 based on a control signal; driving circuits; and monitor circuits. Each of the monitor circuits includes a current source and an N-type FET in which the source is connected to the gate of one of the switching elements; the drain is connected to the current source; and a predetermined voltage is applied to the gate. When an off state of one of the switching elements is detected, the N-type FET Qn outputs an off signal to the dead time control circuit on the other switching element side. Based on the off signal, the dead time control circuit on the other switching element side terminates an operation of delaying the on period of the other switching element.

Abstract: It is an object of the present invention to ensure quite high-speed and highly efficient production using the microreactors and facilitate transition from laboratory-basis synthesis to industrial production. A microreactor system collecting a mixture solution obtained by mixing up material solutions in a microreactor includes a plurality of microreactors arranged in parallel; a flowmeter disposed on a downstream side; a detector detecting a composition of the mixture solution; and a processing device calculating both a reaction time from when the material solutions are mixed up until the detector detects the composition of the mixture solution and an yield of the target product.

Abstract: There is provided a reaction apparatus which is capable of keeping the pressure inside the reactor and is applicable to various fields. This reaction apparatus comprises: a raw material tank (2) for storing a raw material; a high-pressure pump (3) communicated with the raw material tank (2) and designed to deliver the raw material therefrom; a reactor (1) which is disposed on the downstream side of the high-pressure pump (3) and designed to be supplied with the raw material in a compressed state; a heating bath (11) for heating the reactor (1) to promote a reaction; and a product tank (7) for receiving and recovering a product; wherein the reaction apparatus is further equipped with an inlet port which is interposed between the heating bath (11) and the product tank (7), and with an injection pump (6) for injecting an injecting liquid through the inlet port, whereby a pressure of product flowing into the product tank (7) is enabled to be reduced by making use of the flow rate of the injecting liquid.

Abstract: An object of the present invention is to increase the volume of production even with the use of a microreactor, and to improve the quality of reaction products. A chemical synthesis device with a microreactor having a microchannel includes a plurality of microreactors arranged in parallel; a raw material tank that stores a raw material; a pump that delivers the raw material; an inlet solenoid valve and an outlet solenoid valve disposed at the inlet and outlet sides, respectively, of each of the microreactor; a temperature sensor that detects the temperature in the microreactor; and a pressure gage installed at the outlet side of the pump. The chemical synthesis device controls, in connection with values detected by the temperature sensor and the pressure gage, the opening and closing of the inlet solenoid valve and the outlet solenoid valve as well as a rate of flow from the pump.

Abstract: A semiconductor device having: a substrate; nitride-based compound semiconductor layers formed on one main surface of the substrate and made of a nitride-based compound semiconductor; a first electrode formed on the nitride-based compound semiconductor layers and having a Schottky junction with the nitride-based compound semiconductor layers; and a second electrode formed on the nitride-based compound semiconductor layers and subjected to low resistance contact with the nitride-based compound semiconductor layers, wherein the first electrode and substrate are electrically connected through a connection conductor.

Abstract: A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.

Abstract: A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.

Abstract: A HEMT-type field-effect semiconductor device has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source and a drain overlie the electron supply layer. A carrier storage layer overlies the electron supply layer via an insulator, and a gate overlies the carrier storage layer via another insulator. Upon application of an initializer voltage to the gate, the carrier storage layer has stored therein a sufficient amount of carriers to hold the device off even without voltage application to the gate. An initializer circuit is also disclosed whereby the device is initialized automatically for normally-off operation.