Patents by Inventor MIRI JOUNG

MIRI JOUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of fabricating the same
    Patent number: 11948844
    Abstract: Methods of fabricating semiconductor devices comprise forming first active patterns vertically spaced apart on a first active fin of a substrate and second active patterns vertically spaced apart on a second active fin of the substrate that has a first region on which the first active fin is formed and a second region on which the second active fin is formed, forming a first electrode layer on the first and second active fins and the first and second active patterns, forming a first mask pattern overlapping the first electrode layer on the first region, forming a second mask pattern overlapping the first electrode layer on the second region, and using the second mask pattern as an etching mask to etch the first mask pattern and the first electrode layer on the first region to form a first electrode pattern on the second region.
    Type: Grant
    Filed: July 14, 2022
    Date of Patent: April 2, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong-Ho Jeon, Hyunwoo Choi, Se-Koo Kang, Miri Joung
  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20220352034
    Abstract: Methods of fabricating semiconductor devices comprise forming first active patterns vertically spaced apart on a first active fin of a substrate and second active patterns vertically spaced apart on a second active fin of the substrate that has a first region on which the first active fin is formed and a second region on which the second active fin is formed, forming a first electrode layer on the first and second active fins and the first and second active patterns, forming a first mask pattern overlapping the first electrode layer on the first region, forming a second mask pattern overlapping the first electrode layer on the second region, and using the second mask pattern as an etching mask to etch the first mask pattern and the first electrode layer on the first region to form a first electrode pattern on the second region.
    Type: Application
    Filed: July 14, 2022
    Publication date: November 3, 2022
    Inventors: YONG-HO JEON, HYUNWOO CHOI, SE-KOO KANG, MIRI JOUNG
  • Semiconductor device and method of fabricating the same
    Patent number: 11393728
    Abstract: Methods of fabricating semiconductor devices comprise forming first active patterns vertically spaced apart on a first active fin of a substrate and second active patterns vertically spaced apart on a second active fin of the substrate that has a first region on which the first active fin is formed and a second region on which the second active fin is formed, forming a first electrode layer on the first and second active fins and the first and second active patterns, forming a first mask pattern overlapping the first electrode layer on the first region, forming a second mask pattern overlapping the first electrode layer on the second region, and using the second mask pattern as an etching mask to etch the first mask pattern and the first electrode layer on the first region to form a first electrode pattern on the second region.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: July 19, 2022
    Inventors: Yong-Ho Jeon, Hyunwoo Choi, Se-Koo Kang, Miri Joung
  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20210057288
    Abstract: Methods of fabricating semiconductor devices comprise forming first active patterns vertically spaced apart on a first active fin of a substrate and second active patterns vertically spaced apart on a second active fin of the substrate that has a first region on which the first active fin is formed and a second region on which the second active fin is formed, forming a first electrode layer on the first and second active fins and the first and second active patterns, forming a first mask pattern overlapping the first electrode layer on the first region, forming a second mask pattern overlapping the first electrode layer on the second region, and using the second mask pattern as an etching mask to etch the first mask pattern and the first electrode layer on the first region to form a first electrode pattern on the second region.
    Type: Application
    Filed: June 30, 2020
    Publication date: February 25, 2021
    Inventors: YONG-HO JEON, HYUNWOO CHOI, SE-KOO KANG, MIRI JOUNG