Patents by Inventor Miriam Adlerstein Marwick

Miriam Adlerstein Marwick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system
    Patent number: 8259293
    Abstract: An avalanche photodiode is disclosed. The avalanche photodiode includes a substrate of a first conductivity type. A first well of a second conductivity type is formed within the substrate. A second well of the second conductivity type is formed substantially overlying and extending into the first well. A heavily doped region of the first conductivity type is formed substantially overlying and extending into the first well, the junction between the heavily doped region and the second well forming an avalanche multiplication region. A guard ring is formed from a first conductivity material positioned substantially about the periphery of the multiplication region at least partially underlying the heavily doped region. An outer well ring of the second conductivity type is formed about the perimeter of the deep well and the guard ring.
    Type: Grant
    Filed: March 17, 2008
    Date of Patent: September 4, 2012
    Assignee: Johns Hopkins University
    Inventors: Andreas G. Andreou, Miriam Adlerstein Marwick, Philippe O. Pouliquen
  • DEEP SUBMICRON AND NANO CMOS SINGLE PHOTON PHOTODETECTOR PIXEL WITH EVENT BASED CIRCUITS FOR READOUT DATA-RATE REDUCTION COMMUNICATION SYSTEM
    Publication number: 20100245809
    Abstract: An avalanche photodiode and a sensor array comprising an array of said avalanche photodiodes is disclosed. Then avalanche photodiode comprises a substrate of a first conductivity type; a first well of a second conductivity type formed within the substrate; a second well of the second conductivity type formed substantially overlying and extending into the first well; a heavily doped region of the first conductivity type formed substantially overlying and extending into the first well, the junction between the heavily doped region and the second well forming an avalanche multiplication region; a guard ring formed from a first conductivity material positioned substantially about the periphery of the multiplication region at least partially underlying the heavily doped region; and an outer well ring of the second conductivity type formed about the perimeter of the deep well and the guard ring.
    Type: Application
    Filed: March 17, 2008
    Publication date: September 30, 2010
    Applicant: JOHNS HOPKINS UNIVERSITY
    Inventors: Andreas G. Andreou, Miriam Adlerstein Marwick, Philippe O. Pouliquen