Patents by Inventor Miriam Ruth Reshotko

Miriam Ruth Reshotko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11646266
    Abstract: Interconnect structures are disclosed. An example includes conductive traces over a first dielectric layer, dielectric helmet structures over top surfaces of the conductive traces, and a second dielectric layer over the helmet structures. Spaces between adjacent ones of conductive traces are devoid of material. A bottom surface of the second dielectric layer is between top surfaces of the dielectric structures and bottom surfaces of the helmet structures, or co-planar with the top surface of the helmet structures, but the airgap extends above tops of the conductive traces. Another example includes a dielectric adjacent to upper sections but not lower sections of conductive traces, so as to provide airgaps between adjacent lower sections. Alternatively, a first dielectric material is adjacent the upper sections and a second compositionally different dielectric material is adjacent the lower sections. In either case, the sidewalls of the upper sections of the interconnect features may include scalloping.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: May 9, 2023
    Assignee: Intel Corporation
    Inventors: Kevin Lai Lin, Miriam Ruth Reshotko, Nafees Aminul Kabir
  • Publication number: 20210043565
    Abstract: Interconnect structures are disclosed. An example includes conductive traces over a first dielectric layer, dielectric helmet structures over top surfaces of the conductive traces, and a second dielectric layer over the helmet structures. Spaces between adjacent ones of conductive traces are devoid of material. A bottom surface of the second dielectric layer is between top surfaces of the dielectric structures and bottom surfaces of the helmet structures, or co-planar with the top surface of the helmet structures, but the airgap extends above tops of the conductive traces. Another example includes a dielectric adjacent to upper sections but not lower sections of conductive traces, so as to provide airgaps between adjacent lower sections. Alternatively, a first dielectric material is adjacent the upper sections and a second compositionally different dielectric material is adjacent the lower sections. In either case, the sidewalls of the upper sections of the interconnect features may include scalloping.
    Type: Application
    Filed: August 8, 2019
    Publication date: February 11, 2021
    Applicant: INTEL CORPORATION
    Inventors: Kevin Lai Lin, Miriam Ruth Reshotko, Nafees Aminul Kabir