Patents by Inventor Mirja Richter

Mirja Richter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9989703
    Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: June 5, 2018
    Assignee: International Business Machines Corporation
    Inventors: Lukas Czornomaz, Jean Fompeyrine, Jens Hofrichter, Bert Jan Offrein, Mirja Richter
  • Patent number: 9864134
    Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: January 9, 2018
    Assignee: International Business Machines Corporation
    Inventors: Lukas Czornomaz, Jean Fompeyrine, Jens Hofrichter, Bert Jan Offrein, Mirja Richter
  • Patent number: 9823414
    Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: November 21, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike E. Riel
  • Publication number: 20170097468
    Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.
    Type: Application
    Filed: December 15, 2016
    Publication date: April 6, 2017
    Inventors: Lukas Czornomaz, Jean Fompeyrine, Jens Hofrichter, Bert Jan Offrein, Mirja Richter
  • Patent number: 9513436
    Abstract: The present invention relates to a semiconductor device (1) for use in at least an optical application comprising: at least an optically passive aspect (2) that is operable in substantially an optically passive mode, and at least an optically active material (3) comprising at least a material that is operable in substantially an optically active mode, wherein: the optically passive aspect (2) further comprises at least a crystalline seed layer (4), the optically active material (3) being epitaxially grown in at least a predefined structure (5) provided in the optically passive aspect (2) that extends to at least an upper surface (4?) of the crystalline seed layer (4), and the optically passive aspect (2) is structured to comprise at least a passive photonic structure (6), wherein the crystalline seed layer (4) comprises a crystalline wafer and wherein the optically active material (3) comprises at least one of: a III-V material and a II-VI material.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: December 6, 2016
    Assignee: International Business Machines Corporation
    Inventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike Riel
  • Publication number: 20160334574
    Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.
    Type: Application
    Filed: November 27, 2013
    Publication date: November 17, 2016
    Inventors: Lukas CZORNOMAZ, Jean FOMPEYRINE, Jens HOFRICHTER, Bert Jan OFFREIN, Mirja RICHTER
  • Publication number: 20160291249
    Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.
    Type: Application
    Filed: June 10, 2016
    Publication date: October 6, 2016
    Inventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike E. Riel
  • Patent number: 9459405
    Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.
    Type: Grant
    Filed: September 28, 2015
    Date of Patent: October 4, 2016
    Assignee: International Business Machines Corporation
    Inventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike Riel
  • Publication number: 20160018596
    Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.
    Type: Application
    Filed: September 28, 2015
    Publication date: January 21, 2016
    Inventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike Riel
  • Patent number: 9239424
    Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: January 19, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike E Riel
  • Publication number: 20150293302
    Abstract: The present invention relates to a semiconductor device (1) for use in at least an optical application comprising: at least an optically passive aspect (2) that is operable in substantially an optically passive mode, and at least an optically active material (3) comprising at least a material that is operable in substantially an optically active mode, wherein: the optically passive aspect (2) further comprises at least a crystalline seed layer (4), the optically active material (3) being epitaxially grown in at least a predefined structure (5) provided in the optically passive aspect (2) that extends to at least an upper surface (4?) of the crystalline seed layer (4), and the optically passive aspect (2) is structured to comprise at least a passive photonic structure (6), wherein the crystalline seed layer (4) comprises a crystalline wafer and wherein the optically active material (3) comprises at least one of: a III-V material and a II-VI material.
    Type: Application
    Filed: October 31, 2013
    Publication date: October 15, 2015
    Applicant: International Business Machines Corporation
    Inventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike Riel
  • Publication number: 20150212266
    Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.
    Type: Application
    Filed: January 28, 2014
    Publication date: July 30, 2015
    Applicant: International Business Machines Corporation
    Inventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike E. Riel