Patents by Inventor Mirja Richter
Mirja Richter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9989703Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.Type: GrantFiled: December 15, 2016Date of Patent: June 5, 2018Assignee: International Business Machines CorporationInventors: Lukas Czornomaz, Jean Fompeyrine, Jens Hofrichter, Bert Jan Offrein, Mirja Richter
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Patent number: 9864134Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.Type: GrantFiled: November 27, 2013Date of Patent: January 9, 2018Assignee: International Business Machines CorporationInventors: Lukas Czornomaz, Jean Fompeyrine, Jens Hofrichter, Bert Jan Offrein, Mirja Richter
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Patent number: 9823414Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.Type: GrantFiled: June 10, 2016Date of Patent: November 21, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike E. Riel
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Publication number: 20170097468Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.Type: ApplicationFiled: December 15, 2016Publication date: April 6, 2017Inventors: Lukas Czornomaz, Jean Fompeyrine, Jens Hofrichter, Bert Jan Offrein, Mirja Richter
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Patent number: 9513436Abstract: The present invention relates to a semiconductor device (1) for use in at least an optical application comprising: at least an optically passive aspect (2) that is operable in substantially an optically passive mode, and at least an optically active material (3) comprising at least a material that is operable in substantially an optically active mode, wherein: the optically passive aspect (2) further comprises at least a crystalline seed layer (4), the optically active material (3) being epitaxially grown in at least a predefined structure (5) provided in the optically passive aspect (2) that extends to at least an upper surface (4?) of the crystalline seed layer (4), and the optically passive aspect (2) is structured to comprise at least a passive photonic structure (6), wherein the crystalline seed layer (4) comprises a crystalline wafer and wherein the optically active material (3) comprises at least one of: a III-V material and a II-VI material.Type: GrantFiled: October 31, 2013Date of Patent: December 6, 2016Assignee: International Business Machines CorporationInventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike Riel
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Publication number: 20160334574Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.Type: ApplicationFiled: November 27, 2013Publication date: November 17, 2016Inventors: Lukas CZORNOMAZ, Jean FOMPEYRINE, Jens HOFRICHTER, Bert Jan OFFREIN, Mirja RICHTER
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Publication number: 20160291249Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.Type: ApplicationFiled: June 10, 2016Publication date: October 6, 2016Inventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike E. Riel
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Patent number: 9459405Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.Type: GrantFiled: September 28, 2015Date of Patent: October 4, 2016Assignee: International Business Machines CorporationInventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike Riel
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Publication number: 20160018596Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.Type: ApplicationFiled: September 28, 2015Publication date: January 21, 2016Inventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike Riel
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Patent number: 9239424Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.Type: GrantFiled: January 28, 2014Date of Patent: January 19, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike E Riel
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Publication number: 20150293302Abstract: The present invention relates to a semiconductor device (1) for use in at least an optical application comprising: at least an optically passive aspect (2) that is operable in substantially an optically passive mode, and at least an optically active material (3) comprising at least a material that is operable in substantially an optically active mode, wherein: the optically passive aspect (2) further comprises at least a crystalline seed layer (4), the optically active material (3) being epitaxially grown in at least a predefined structure (5) provided in the optically passive aspect (2) that extends to at least an upper surface (4?) of the crystalline seed layer (4), and the optically passive aspect (2) is structured to comprise at least a passive photonic structure (6), wherein the crystalline seed layer (4) comprises a crystalline wafer and wherein the optically active material (3) comprises at least one of: a III-V material and a II-VI material.Type: ApplicationFiled: October 31, 2013Publication date: October 15, 2015Applicant: International Business Machines CorporationInventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike Riel
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Publication number: 20150212266Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.Type: ApplicationFiled: January 28, 2014Publication date: July 30, 2015Applicant: International Business Machines CorporationInventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike E. Riel