Patents by Inventor Miryam ELOUNEG-JAMROZ

Miryam ELOUNEG-JAMROZ has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting diode comprising at least one wider bandgap intermediate layer placed in at least one barrier layer of the light-emitting zone
    Patent number: 10629773
    Abstract: Disclosed is a light-emitting diode containing: first and second semiconductor layers respectively n-doped and p-doped, forming a p-n junction; an active zone placed between the first and second layers, including an InXGa1-XN emitting layer able to form a quantum well, and two InYGa1-YN, where 0<Y<X, barrier layers between which the emitting layer is placed; and an intermediate layer, which is placed either in the barrier layer located between the emitting layer and the first layer and portions of which are then on either side of the intermediate layer, or placed between the barrier layer and the emitting layer. The intermediate layer includes a III-N semiconductor of bandgap wider than that of the barrier layer. The second layer includes GaN or InWGa1-WN, where 0<W<Y, and the first layer includes InVGa1-VN, where V>W>0.
    Type: Grant
    Filed: April 25, 2017
    Date of Patent: April 21, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Armelle Even, Miryam Elouneg-Jamroz, Ivan-Christophe Robin
  • LIGHT-EMITTING DIODE COMPRISING AT LEAST ONE WIDER BANDGAP INTERMEDIATE LAYER PLACED IN AT LEAST ONE BARRIER LAYER OF THE LIGHT-EMITTING ZONE
    Publication number: 20190157505
    Abstract: Disclosed is a light-emitting diode containing: first and second semiconductor layers respectively n-doped and p-doped, forming a p-n junction; an active zone placed between the first and second layers, including an InXGa1-XN emitting layer able to form a quantum well, and two InYGa1-YN, where 0<Y<X, barrier layers between which the emitting layer is placed; and an intermediate layer, which is placed either in the barrier layer located between the emitting layer and the first layer and portions of which are then on either side of the intermediate layer, or placed between the barrier layer and the emitting layer. The intermediate layer includes a III-N semiconductor of bandgap wider than that of the barrier layer. The second layer includes GaN or InWGa1-WN, where 0<W<Y, and the first layer includes InVGa1-VN, where V>W>0.
    Type: Application
    Filed: April 25, 2017
    Publication date: May 23, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Armelle EVEN, Miryam ELOUNEG-JAMROZ, Ivan-Christophe ROBIN