Patents by Inventor Misa Sunagawa

Misa Sunagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • InO—SnO—ZnO sputtering target
    Patent number: 9214519
    Abstract: A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) to (4): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.10?In/(In+Sn+Zn)?0.85??(1) 0.01?Sn/(In+Sn+Zn)?0.40??(2) 0.10?Zn/(In+Sn+Zn)?0.70??(3) 0.70?In/(In+X)?0.99??(4).
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: December 15, 2015
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Masayuki Itose, Mami Nishimura, Misa Sunagawa, Masashi Kasami, Koki Yano
  • In—Ga—Zn oxide sputtering target and method for producing same
    Patent number: 9206502
    Abstract: A sputtering target including an oxide A and InGaZnO4, the oxide A having a diffraction peak in regions A to K at 2?=7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5°, 56.5° to 59.5°, 14.8° to 16.2°, 22.3° to 24.3°, 32.2° to 34.2°, 43.1° to 46.1°, 46.2° to 49.2°, and 62.7° to 66.7°.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: December 8, 2015
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Misa Sunagawa, Masayuki Itose, Mami Nishimura, Masashi Kasami
  • Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn
    Patent number: 9054196
    Abstract: A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58?In/(In+Ga+Zn)?0.68 and 0.15<Ga/(In+Ga+Zn)?0.29, the region 2 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.09?Ga/(In+Ga+Zn)<0.20, and the region 3 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.20?Ga/(In+Ga+Zn)?0.27.
    Type: Grant
    Filed: May 1, 2012
    Date of Patent: June 9, 2015
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Masayuki Itose, Mami Nishimura, Hirokazu Kawashima, Misa Sunagawa, Masashi Kasami, Koki Yano
  • Polycyclic ring-fused compound and organic thin film transistor utilizing the same
    Patent number: 8946688
    Abstract: A compound for an organic thin film transistor represented by the following formula (1):
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: February 3, 2015
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Misa Sunagawa, Masatoshi Saito, Hiroaki Nakamura, Hirofumi Kondo, Naoki Kurihara, Masahiro Kawamura
  • IN-GA-ZN OXIDE SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
    Publication number: 20140145124
    Abstract: A sputtering target including an oxide A and InGaZnO4, the oxide A having a diffraction peak in regions A to K at 2?=7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5°, 56.5° to 59.5°, 14.8° to 16.2°, 22.3° to 24.3°, 32.2° to 34.2°, 43.1° to 46.1°, 46.2° to 49.2°, and 62.7° to 66.7°.
    Type: Application
    Filed: April 27, 2012
    Publication date: May 29, 2014
    Inventors: Misa Sunagawa, Masayuki Itose, Mami Nishimura, Masashi Kasami
  • IN2O3-ZNO SPUTTERING TARGET
    Publication number: 20140102892
    Abstract: A sputtering target including indium (In) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) and (2): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.30?In/(In+Zn)?0.90??(1) 0.70?In/(In+X)?0.99??(2).
    Type: Application
    Filed: May 8, 2012
    Publication date: April 17, 2014
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Masayuki Itose, Mami Nishimura, Misa Sunagawa, Masashi Kasami, Koki Yano
  • IN2O3-SNO2-ZNO SPUTTERING TARGET
    Publication number: 20140103268
    Abstract: A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) to (4): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.10?In/(In+Sn+Zn)?0.85??(1) 0.01?Sn/(In+Sn+Zn)?0.40??(2) 0.10?Zn/(In+Sn+Zn)?0.70??(3) 0.70?In/(In+X)?0.
    Type: Application
    Filed: May 7, 2012
    Publication date: April 17, 2014
    Inventors: Masayuki Itose, Mami Nishimura, Misa Sunagawa, Masashi Kasami, Koki Yano
  • THIN-FILM TRANSISTOR
    Publication number: 20140084289
    Abstract: A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58?In/(In+Ga+Zn)?0.68 and 0.15<Ga/(In+Ga+Zn)?0.29, the region 2 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.09?Ga/(In+Ga+Zn)<0.20, and the region 3 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.20?Ga/(In+Ga+Zn)?0.27.
    Type: Application
    Filed: May 1, 2012
    Publication date: March 27, 2014
    Inventors: Masayuki Itose, Mami Nishimura, Hirokazu Kawashima, Misa Sunagawa, Masashi Kasami, Koki Yano
  • ORGANIC SEMICONDUCTOR MATERIAL, COATING LIQUID CONTAINING THE MATERIAL, AND ORGANIC THIN FILM TRANSISTOR
    Publication number: 20140061616
    Abstract: An organic semiconductor material is represented by the following formula (1), wherein two or more of R1 to R6 are an alkyl group.
    Type: Application
    Filed: December 23, 2011
    Publication date: March 6, 2014
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Misa Sunagawa, Masatoshi Saito, Hidetsugu Ikeda, Yoichi Ikeda, Hirofumi Kondo, Kota Terai
  • POLYCYCLIC RING-FUSED COMPOUND AND ORGANIC THIN FILM TRANSISTOR UTILIZING SAME
    Publication number: 20120273770
    Abstract: A compound for an organic thin film transistor represented by the following formula (1):
    Type: Application
    Filed: December 13, 2010
    Publication date: November 1, 2012
    Inventors: Misa Sunagawa, Masatoshi Saito, Hiroaki Nakamura, Hirofumi Kondo, Naoki Kurihara, Masahiro Kawamura