Abstract: Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.

Abstract: In a lead-acid battery including an electrode plate group housed in a cell chamber 6 with an electrolyte, each positive electrode plate includes a positive electrode grid made of lead or a lead alloy containing no antimony, and a positive electrode active material with which the positive electrode grid is filled. Each negative electrode plate includes a negative electrode grid made of lead or a lead alloy containing no antimony, a surface layer formed on a surface of the negative electrode grid and made of a lead alloy containing antimony, and a negative electrode active material with which the negative electrode grid is filled. A mass ratio MN/MP falls within a range of 0.70 to 1.10, where MP represents the mass of the positive electrode active material per cell chamber, and MN represents the mass of the negative electrode active material per cell chamber.

Abstract: In a lead-acid batter including an electrode plate group housed in a cell chamber with an electrolyte, each positive electrode plate includes a positive electrode grid made of lead or a lead alloy containing no antimony, and a positive electrode active material with which the positive electrode grid is filled. Each negative electrode plate includes a negative electrode grid made of lead or a lead alloy containing no antimony, a surface layer formed on a surface of the negative electrode grid and made of a lead alloy containing antimony, and a negative electrode active material with which the negative electrode grid is filled. A mass ratio MN/MP falls within a range of 0.70 to 1.10, where MP represents the mass of the positive electrode active material per cell chamber, and MN represents the mass of the negative electrode active material per cell chamber.

Abstract: A lead-acid battery grid used for an electrode of a lead-acid battery, wherein the lead-acid battery grid is made of a Pb alloy containing at least one of Sn or Ca, and includes an upper frame constituting an upper side of the lead-acid battery grid, a lower frame constituting a lower side of the lead-acid battery grid, and a meshed part being present between the upper frame and the lower frame and including intersecting strands, a ratio Wu/W of a mass Wu of an upper half of the meshed part to a total mass W of the meshed part is 62.5% or higher and 67% or lower, and a cover layer containing a larger amount of Sn than the strands is formed on at least part of a surface of the strands, and the cover layer is not formed on a surface of the lower frame.

Abstract: [Purpose] It is a purpose of the present invention to provide a lead-acid battery for use in idle reduction operation in which both excellent life characteristics and suppression of corrosion of negative-electrode grid ears are achieved by suppressing variations in SOC between cells. [Solution] A lead-acid battery including: a container in which a plurality of cells are linearly arranged; and a lid provided with a terminal. Plate packs provided in the cells are connected in series. One of electrode plates provided in the cells at both ends of the plurality of cells is connected to the terminal through a pole. The concentration of antimony contained in an electrolyte in each of the end cells is higher than that of each of the intermediate cells located between the end cells.