Abstract: A method for designing, by means of a computer, at least one surface of a lens for a user. The method includes the steps of (i) obtaining displacement information on an amount of displacement between a user specific fitting position and a reference position, the reference position representing a primary fitting point of a lens surface on a reference line of sight of an eye of the user, and the user specific fitting position representing a user specific fitting point of the lens surface determined on the basis of the user; and (ii) causing calculating a design of the at least one surface of the lens on the basis of said displacement information.

Abstract: A method for designing, by means of a computer, at least one surface of a lens for a user. The method includes the steps of (i) obtaining displacement information on an amount of displacement between a user specific fitting position and a reference position, the reference position representing a primary fitting point of a lens surface on a reference line of sight of an eye of the user, and the user specific fitting position representing a user specific fitting point of the lens surface determined on the basis of the user; and (ii) causing calculating a design of the at least one surface of the lens on the basis of said displacement information.

Abstract: A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

Abstract: A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.